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H336 Abstract: h337 Rad Hard in MOSFET Text: Data Sheet No. PD-9.886 INTERNATIONAL RECTIFIER I R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN913Q RAD HARD Product Summary -100 Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability	OCR Scan	IRHN913Q 1x105 1x1012 MIL-STD-750, H-338 H336 h337 Rad Hard in MOSFET	PDF

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H336

Abstract: h337 Rad Hard in MOSFET
Text: Data Sheet No. PD-9.886 INTERNATIONAL RECTIFIER I R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN913Q RAD HARD Product Summary -100 Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

OCR Scan

IRHN913Q 1x105 1x1012 MIL-STD-750, H-338 H336 h337 Rad Hard in MOSFET

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