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    Infineon Technologies AG IRHYS67230CM

    Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYS67230CM)
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    Infineon Technologies AG IRHYS67230CMSCS-01

    Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYS67230CMSCS-01)
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    Infineon Technologies AG IRHYS67230CMSCV

    Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYS67230CMSCV)
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    IRHYS67230CM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHYS67230CM International Rectifier Original PDF

    IRHYS67230CM Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96925 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96925A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic


    Original     		PDF PD-96925A O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM O-257AA 90MeV/

    2N7592

    Abstract: 2N7592T3
    Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A


    Original     		PDF PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. 2N7592

    2n7592

    Abstract: No abstract text available
    Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A


    Original     		PDF PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. 2n7592

    IRHYS67230CM

    Abstract: IRHYS63230CM PD-96925B
    Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96925B O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PD-96925B

    Untitled

    Abstract: No abstract text available
    Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A


    Original     		PDF PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA.

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    2N7594

    Abstract: 2N7588T3 2N7590T3 2n7588 IRHYS67230CM IRHYS67130CM 2N759
    Text: INCH-POUND MIL-PRF-19500/755 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF


    Original     		PDF MIL-PRF-19500/755 2N7588T3, 2N7590T3, 2N7592T3 2N7594T3, MIL-PRF-19500. 2N7588T3 IRHYS67130CM 2N7590T3 IRHYS67133CM 2N7594 2N7588T3 2N7590T3 2n7588 IRHYS67230CM IRHYS67130CM 2N759