irm 1838
Abstract: HFA30PB120 IR 1838 OZ 9936 transistor D207 IRFP250
Text: Preliminary Data Sheet PD-2.604 rev. A 12/00 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.4V
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HFA30PB120
490nC
HFA30PB120
irm 1838
IR 1838
OZ 9936
transistor D207
IRFP250
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smd TRANSISTOR code marking 2F
Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Text: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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PD-20605
HFA16TB120S
260nC
HFA16TB120S
smd TRANSISTOR code marking 2F
SMD TRANSISTOR MARKING 9bb
TRANSISTOR SMD 9bb
IR 1838 T
smd marking dt2
TRANSISTOR SMD MARKING CODE kh
irm 1838
IR 1838 3v
IR 1838 T datasheet
IR 1838
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irm 1838
Abstract: 237 DT2 transistor HFA32PA120C 32PA120 PA120C
Text: HFA32PA120CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 16 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA32PA120CPbF
O-247AC
HFA32PA120C
5M-1994
O-247
irm 1838
237 DT2 transistor
32PA120
PA120C
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Untitled
Abstract: No abstract text available
Text: PD - 95683 HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16PB120PbF
260nC
HFA16PB120
O-247AC
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HFA16PB120
Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
O-247AC
IRFP250
HFA16PB120PBF
transistor IRFP250
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
vs 1838 b
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9936 transistor
Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
Text: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits
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HFA16TB120
260nC
HFA16TB120
9936 transistor
IR 1838 T
IR 1838 3v
diode 838
IRFP250
IR 1838
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IR 1838
Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
HFA06TB120
IR 1838
IRFP250 datasheet
B120
HFA06TB120
IRFP250
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16TB120 IRFP250
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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Original
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PDF
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HFA16TB120
260nC
HFA16TB120
O-220AC
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
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Untitled
Abstract: No abstract text available
Text: HFA16TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free Designed and qualified for industrial level
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HFA16TB120SPbF
HFA16TB120SPbF
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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Original
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PDF
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HFA16TB120
260nC
HFA16TB120
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: HFA16TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • BENEFITS 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA16TB120S
HFA16TB120S
18-Jul-08
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IR 1838 T
Abstract: IR 1838 3v IR 1838 T datasheet 8A15 IR 1838 T transistor IR 1838
Text: Preliminary Data Sheet PD -2.360 rev. A 11/00 HFA32PA120C HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. = 2.3V
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HFA32PA120C
260nC
HFA32PA120C
IR 1838 T
IR 1838 3v
IR 1838 T datasheet
8A15
IR 1838 T transistor
IR 1838
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Untitled
Abstract: No abstract text available
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
08-Mar-07
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|
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marking dt2
Abstract: HFA16TB120S IRFP250
Text: HFA16TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • BENEFITS 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA16TB120S
HFA16TB120S
18-Jul-08
marking dt2
IRFP250
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vs 1838 b
Abstract: IR 1838 T HFA32PA120C IRFP250
Text: Bulletin PD -2.360 rev. B 05/01 HFA32PA120C HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI
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HFA32PA120C
260nC
HFA32PA120C
O-247AC
vs 1838 b
IR 1838 T
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95687 HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A
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HFA32PA120CPbF
260nC
HFA32PA120C
O-247AC
O-247AC
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vs 1838 b
Abstract: HFA16TB120 HFA16TB120S IRFP250 SMD-220
Text: Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM K Features BASE + 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-20605A
HFA16TB120S
260nC
HFA16TB120S
SMD-220
vs 1838 b
HFA16TB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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Original
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PDF
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HFA16PB120
260nC
HFA16PB120
08-Mar-07
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IR 1838 3v
Abstract: HFA16TB120 IRFP250 1838 ir
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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Original
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PDF
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HFA16TB120
260nC
HFA16TB120
12-Mar-07
IR 1838 3v
IRFP250
1838 ir
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IR 1838 T
Abstract: IR 1838 T transistor irm 1838 IR 1838
Text: Preliminary Data Sheet PD -2.492 05/97 International IO R Rectifier H F A 16T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche
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OCR Scan
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PDF
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HFA16TB120
IR 1838 T
IR 1838 T transistor
irm 1838
IR 1838
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transistor c429
Abstract: diode 47C hfa30pb120
Text: International lO R Rectifier HEXFRED Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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PDF
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HFA30PB120
490nC
HFA30PB120
transistor c429
diode 47C
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IR 1838 T
Abstract: 1838 t
Text: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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PDF
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HFA16TB120S
260nC
HFA16TB120S
IR 1838 T
1838 t
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TRANSISTOR C483
Abstract: IRGPH50MD2
Text: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses
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OCR Scan
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PDF
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IRGPH50MD2
10kHz)
O-247AC
5SM52
C-488
TRANSISTOR C483
IRGPH50MD2
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