Untitled
Abstract: No abstract text available
Text: 19-4797; Rev 0; 2/99 UAL IT MAN TION K A ET U E L H A EV TA S WS DA FOLLO 1 0 M H z t o 5 0 0 M H z V CO Buffe r Am plifie rs w it h Diffe re nt ia l Out put s The MAX2470/MAX2471 are flexible, low-cost, highreverse-isolation buffer amplifiers for applications with
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MAX2470/MAX2471
MAX2470
10MHz
500MHz
200MHz.
MAX2471
500MHz.
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MAX2470
Abstract: MAX2470EUT-T MAX2471 MAX2471EUT-T 54 dbm sot23-6
Text: 19-4797; Rev 0; 2/99 UAL IT MAN TION K A ET U E L H A EV TA S WS DA FOLLO 10MHz to 500MHz VCO Buffer Amplifiers with Differential Outputs The MAX2470/MAX2471 are flexible, low-cost, highreverse-isolation buffer amplifiers for applications with discrete and module-based VCO designs. Both feature
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10MHz
500MHz
MAX2470/MAX2471
MAX2470
200MHz.
MAX2471
MAX2470EUT-T
MAX2471EUT-T
54 dbm sot23-6
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage
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TA4003F
IS12P
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Untitled
Abstract: No abstract text available
Text: IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip April, 1991 O ava ntek IVA-05200 Chip Outline Features • • • • • • • Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates High Gain: 30 dB typical
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IVA-05200
IVA-05200
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz
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INA-02184
INA-02186
INA-02184
INA-02186
5965-9675E
4447SA4
01fl35c
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Untitled
Abstract: No abstract text available
Text: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bb53R31
DD325T1
OM2083/86
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vHF amplifier module
Abstract: philips if catv amplifier wideband amplifier philips ferrite material specifications
Text: N AUER PHILIPS/DISCRETE b'ïE D ^ 5 3 ^ 3 1 DDBSS'ìl 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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OM2Q83/86
vHF amplifier module
philips if catv amplifier
wideband amplifier
philips ferrite material specifications
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MSA806
Abstract: msa80 philips Q 522 philips if catv amplifier
Text: N AMER PHI LI PS/DISCRE TE b^E D • bbSB^l D0325bb GT1 ■ APX P hilips S em iconductors Prelim inary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bb53131
D0325bb
OM2082/60
MSA34o
MSA806
msa80
philips Q 522
philips if catv amplifier
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TOA 2050
Abstract: philips hybrid amplifier modules CI 4609 56918
Text: Philips Semiconductors Preliminary specification Hybrid wideband amplifier OM956/1 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use as an IF amplifier for satellite television and as a general purpose amplifier in the range 950 to 2050 MHz.
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OM956/1
MSA34S
IS21I2
SCD25
7110fi2b
TOA 2050
philips hybrid amplifier modules
CI 4609
56918
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PDF
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MSA806
Abstract: philips if catv amplifier gt 6312 philips MATV amplifiers
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
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OM2Q82/86
MSA340
SCD24
7110fl2b
MSA806
philips if catv amplifier
gt 6312
philips MATV amplifiers
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Untitled
Abstract: No abstract text available
Text: MGA-66100 2-6 GHz Cascadable GaAs MMIC Amplifier Wtial HEWLETT W!XA PACKARD Features Chip Outline • Cascadable 50 £2 Gain Block • Broadband Performance: 2-6 GHz 12.5 dB Typical Gain ±1.0 dB Gain Flatness 13.0 dBm P1dB • Single Supply Bias • Unconditionally Stable
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MGA-66100
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Untitled
Abstract: No abstract text available
Text: f T C | HEW LETT PACKARD mLHM Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01170 Features • Cascadable 50 Q Gain Block • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: amplifier housed in a hermetic, high reliability package. It is designed for
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INA-01170
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AN-A005
Abstract: AVANTEK transistor
Text: INA-01100 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier What H EW LETT mL'EM PA C K A R D Features • • • • • Chip Outline1 Cascadable 50 £2 Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz High Gain: 32.5 dB typical at 100 MHz
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INA-01100
AN-A005
AVANTEK transistor
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Untitled
Abstract: No abstract text available
Text: T L jm H EW LETT ft "EM PA CK ARD Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03170 Features • C ascadable 50 Q Gain B lock • Low N o ise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 1.5 GHz • 3 dB Bandwidth:
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INA-03170
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Untitled
Abstract: No abstract text available
Text: Who 1 HEWLETT mL'HM INA-10386 Low Noise, Cascadable Silicon Bipolar MMIC Amplifier PACKARD Features • • • • • • 86 Plastic Package Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 1.8 GHz 26 dB typical Gain at 1.5 GHz 10 dBm typical P1dB at 1.5 GHz
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INA-10386
INA-10386
5962-6872E
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PDF
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ina 124
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS b lE D •! 44M75Ö4 0Ü1GG21 4T5 MHPA INA-02184, INA-02186 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier EW LETT PACKARD Features Package 84 • Cascadable 50 Q Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz
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44M75Ã
1GG21
INA-02184,
INA-02186
INA-02184
INA-02186
ina 124
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4002F V H F -U H F WIDE BAND AM PLIFIER W eight : 0.013g Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature * SYMBOL RATING
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TA4002F
500MHz
500MHz,
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philips catv 860 amplifier ic
Abstract: D200-400 SEMICONDUCTO applications
Text: Philips Semiconducto H 7 1 1 0 fl5 b 0071A73 l| c 4 H IP H IN Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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7110fl2b
OM2Q83/86
philips catv 860 amplifier ic
D200-400
SEMICONDUCTO applications
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TA4002F
Abstract: No abstract text available
Text: TO SHIBA TA4002F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4002F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.3GHz Typ. (3dB down) • High Gain : |S2 il2= 23dB (Typ.) (f = 500MHz) • 500 Input and Output Impedance • Small Package
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TA4002F
500MHz)
TA4002F
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D WkTM HEW LETT mHEM P A C K A R D 4 4 4 7 5 A 4 D D 1 0 D 1 3 3ET • H P A MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Chip Outline1 Features • • • • • ■ INA-01100 Cascadable 50 Q Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz
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INA-01100
INA-01100
fabricat-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V
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TA4003F
500MHz,
IS22P
IS12I2
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PDF
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HPVA-0180
Abstract: HPVA0180
Text: Wtipl mL'tLa H EW LETT P a c k a rd Silicon Bipolar M onolithic Variable Gain Amplifier Technical Data HPVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias • Single Ended or Differential Operation • Low Cost Plastic Surface
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HPVA-0180
IIPVA-0180
HPVA0180
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PDF
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AN-A005
Abstract: No abstract text available
Text: Thal WÜtiMHEWLETT PACKARD IN A -0 2 1 0 0 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Features Chip Outline1 • Cascadable 50 Q Gain Block • Low Noise Figure: 2.0 dB typical at 0.5 GHz • High Gain: 31.5 dB typical at 0.5 GHz 25.0 dB typical at 1.5 GHz
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INA-02100
AN-A005
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PDF
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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