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    ISD 1740 Search Results

    ISD 1740 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PAN1740 Renesas Electronics Corporation Panasonic Bluetooth® Low Energy Module Visit Renesas Electronics Corporation
    UPA1740TP-E2-AZ Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    UPA1740TP-E1-AZ Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    PAN1740A Renesas Electronics Corporation Panasonic Bluetooth® 5.0 with Small Size (DA14585) Visit Renesas Electronics Corporation
    77317-404-10LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right angle Header, Through Hole, Double Row, 10 Positions ,2.54mm (0.100in) Pitch, Visit Amphenol Communications Solutions
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    ISD 1740 Price and Stock

    Nuvoton Technology Corp ISD1740SY

    IC VOICE REC/PLAY 80SEC 28SOIC
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    DigiKey ISD1740SY Tube 9 1
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    Nuvoton Technology Corp ISD1740X

    SINGLE CHIP MULTI-MESS VOICE REC
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    Nuvoton Technology Corp ISD1740PY

    IC VOICE REC/PLAY 80SEC 28DIP
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    DigiKey ISD1740PY Tube 15
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    Nuvoton Technology Corp ISD1740SYI

    IC VOICE REC/PLAY 80SEC 28SOIC
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    DigiKey ISD1740SYI Tube 27
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    Nuvoton Technology Corp ISD1740PYI

    IC VOICE REC/PLAY 80SEC 28DIP
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    DigiKey ISD1740PYI Tube 15
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    Find more ISD 1740 price and stock on Findchips.com

    ISD 1740 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISD1740 Winbond Electronics Multi-Message Single-Chip Voice Record & Playback Devices Original PDF
    ISD1740EY nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-TSOP Original PDF
    ISD1740EY01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-TSOP Original PDF
    ISD1740EYI nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-TSOP Original PDF
    ISD1740EYI01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-TSOP Original PDF
    ISD1740EYIR nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40SEC 28-TSOP Original PDF
    ISD1740EYR nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40SEC 28-TSOP Original PDF
    ISD1740PY nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-DIP Original PDF
    ISD1740PY01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-DIP Original PDF
    ISD1740PYI nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-DIP Original PDF
    ISD1740PYI01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-DIP Original PDF
    ISD1740SY Winbond Electronics IC VOICE REC/PLAY 40-SEC 28-SOIC Original PDF
    ISD1740SY01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-SOIC Original PDF
    ISD1740SYI nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-SOIC Original PDF
    ISD1740SYI01 Winbond Electronics Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40-SEC 28-SOIC Original PDF
    ISD1740SYIR nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40SEC 28-SOIC Original PDF
    ISD1740SYR nuvoTon Interface - Voice Record and Playback, Integrated Circuits (ICs), IC VOICE REC/PLAY 40SEC 28-SOIC Original PDF

    ISD 1740 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4800b

    Abstract: max 4800b qv606m1 QV306m1 QV600 MAX232 PIC16F627A quadravox QV606 quadravox QV606 type 2 4800B DATA
    Text: _ QV600 Quadravox QV606m1 type 1 - RS232 controlled sound playback module QV306m1 emulation The QV606m1 MP3-based digital message module with type 1 firmware is intended to replace the QV306m1 Winbond ISD ChipCorder based system. It therefore duplicates the size, pinout, and


    Original     		PDF QV600 QV606m1 RS232 QV306m1 QV306m1, 20kbps 4800b max 4800b QV600 MAX232 PIC16F627A quadravox QV606 quadravox QV606 type 2 4800B DATA

    0409 06 027 053

    Abstract: P12NK60Z F12NK60Z isd 1740 59 L2 zener P12NK60 STP12N JESD97 STF12NK60Z STP12NK60Z
    Text: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A 150 W 35 W • ■


    Original     		PDF STP12NK60Z STF12NK60Z O-220 O-220FP 0409 06 027 053 P12NK60Z F12NK60Z isd 1740 59 L2 zener P12NK60 STP12N JESD97 STF12NK60Z STP12NK60Z

    P12NK60

    Abstract: F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z
    Text: STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A ID PW 35 W 3 3 • Extremely high dv/dt capability


    Original     		PDF STP12NK60Z STF12NK60Z O-220 /TO-220FP O-220FP O-220 P12NK60 F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z

    P12NK60

    Abstract: No abstract text available
    Text: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability


    Original     		PDF STP12NK60Z STF12NK60Z O-220 /TO-220FP O-220FP O-220 P12NK60

    Untitled

    Abstract: No abstract text available
    Text: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability


    Original     		PDF STP12NK60Z STF12NK60Z O-220 /TO-220FP O-220FP O-220

    IRFP4368PBF

    Abstract: AN-994
    Text: PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)


    Original     		PDF IRFP4368PbF 350Ac O-247AC O-247AC IRFP4368PBF AN-994

    Untitled

    Abstract: No abstract text available
    Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z


    Original     		PDF STP12NK60Z STF12NK60Z, STW12NK60Z O-220, O-220FP, O-247 STF12NK60Z O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)


    Original     		PDF IRFP4368PbF 350Ac O-247AC O-247AC

    w12nk60z

    Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
    Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z


    Original     		PDF STP12NK60Z STF12NK60Z, STW12NK60Z O-220, O-220FP, O-247 STF12NK60Z O-220 w12nk60z P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60

    400N4F6

    Abstract: No abstract text available
    Text: STI400N4F6, STP400N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Features Order codes STI400N4F6 STP400N4F6 VDSS RDS on max ID TAB TAB 40 V < 1.7 mΩ 120 A(1) 1. Limited by package


    Original     		PDF STI400N4F6, STP400N4F6 O-220 STI400N4F6 O-220 400N4F6

    AM-145

    Abstract: STH400N4F6-2 STH400
    Text: STH400N4F6-2, STH400N4F6-6 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − preliminary data Features Order code STH400N4F6-2 STH400N4F6-6 VDSS RDS on max ID 40 V < 1.15 mΩ 180 A(1) TAB TAB 2


    Original     		PDF STH400N4F6-2, STH400N4F6-6 STH400N4F6-2 AM-145 STH400

    IRF9358

    Abstract: P-channel power mosfet SO-8 30V 9.2A 20 MS-012AA IRF9358PBF IRF9358TRPBF
    Text: PD - 97616 IRF9358PbF HEXFET Power MOSFET VDS -30 RDS on max V 16.3 mΩ 23.8 mΩ Qg (typical) 19 nC ID -9.2 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 D G2 2 S1 3 G1 4 8 D2 7 D2 D 6 D1 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRF9358PbF IRF9358TRPbF JESD47F J-STD-020D) IRF9358 P-channel power mosfet SO-8 30V 9.2A 20 MS-012AA IRF9358PBF IRF9358TRPBF

    IRF9358

    Abstract: No abstract text available
    Text: PD - 97616 IRF9358PbF HEXFET Power MOSFET VDS -30 RDS on max V 16.3 mΩ 23.8 mΩ Qg (typical) 19 nC ID -9.2 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 D G2 2 S1 3 G1 4 8 D2 7 D2 D 6 D1 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application


    Original     		PDF IRF9358PbF IRF9358TRPbF J-STD-020Dâ IRF9358

    ao8807

    Abstract: 70°C AO8807L PF334
    Text: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807


    Original     		PDF AO8807 AO8807 AO8807L 70°C PF334

    AON4407

    Abstract: RL067
    Text: AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. VDS (V) = -12V


    Original     		PDF AON4407 AON4407 RL067

    Untitled

    Abstract: No abstract text available
    Text: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807


    Original     		PDF AO8807 AO8807 AO8807L

    ao4821

    Abstract: 70°C RL067 M3025
    Text: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		PDF AO4821 AO4821 70°C RL067 M3025

    AO8807L

    Abstract: No abstract text available
    Text: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		PDF AO8807L AO8807L

    Untitled

    Abstract: No abstract text available
    Text: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		PDF AO4821 AO4821 Gate-Source00

    Untitled

    Abstract: No abstract text available
    Text: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF IRF7478PbF AN1001)

    irf 1740

    Abstract: 48V SMPS smps 48v 12v
    Text: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7478QPbF irf 1740 48V SMPS smps 48v 12v

    IRF7478PBF

    Abstract: 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v
    Text: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF IRF7478PbF AN1001) IRF7478PBF 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v

    Untitled

    Abstract: No abstract text available
    Text: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V


    Original     		PDF 96128B IRF7478QPbF

    irf 1740

    Abstract: EIA-541 P Channel Power MOSFET IRF
    Text: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's are a 150°C


    Original     		PDF 6128A IRF7478QPbF irf 1740 EIA-541 P Channel Power MOSFET IRF