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    ISOPLUS IXYS MOUNTING Search Results

    ISOPLUS IXYS MOUNTING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    ISOPLUS IXYS MOUNTING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet PDF

    IXAN0071

    Abstract: MM1X1G320N60B3 dow corning silicone compound 100N DC340
    Text: IXAN0071 The SMPD Package and its Mounting Instructions Abdus Sattar, IXYS Corporation Introduction: IXYS has expanded its ISOPLUS package portfolio by offering a new package called the SMPD package. An illustration of the package shown in Figure 1 shows an


    Original     		IXAN0071 MMIX1T600N04T2 MMIX1F520N075T2 MM1X1G320N60B3 21-pin IXAN0071 MM1X1G320N60B3 dow corning silicone compound 100N DC340 PDF

    xenon hid ballast

    Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary


    Original     		E153432) com/IXAN0022 xenon hid ballast Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF

    19N220A

    Abstract: 19n250a high voltage igbt igbt clip 19n250 ixlf 19n250a
    Text: High Voltage IGBTs Contents High Voltage IGBT VCES IC max VCE sat ISOPLUS i4-PACTM Page typ. TC = 25°C TC = 25°C V A V 2200 2500 32 32 3.2 3.2 ➤ IXLF 19N220A ➤ IXLF 19N250A B6 - 2 ➤ New product 2000 IXYS All rights reserved B6 - 1 Advanced Technical Information


    Original     		19N220A 19N250A 19N220A 19N250A high voltage igbt igbt clip 19n250 ixlf 19n250a PDF

    Dsei 2x101-12A

    Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
    Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000


    Original     		O-252 0-06A 0-10A 0-12A D1-16 D1-18 D1-20 0-02A Dsei 2x101-12A ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b PDF

    isoplus

    Abstract: isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T
    Text: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 5 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i5-PaksTM 2 HUGE TRENCH MOSFETS IN 1 ISOLATED PACKAGE.


    Original     		IXTL2x240N055T IXTL2x220N075T IXTL2x200N085T IXTL2x180N10T 2x240 2x220 2x200 2x180 2x140 2x120 isoplus isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T PDF

    isoplus ixys mounting

    Abstract: isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTF200N10T IXTF250N075T IXTF280N055T
    Text: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 4 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i4-PaksTM NEXT GENERATION 55V TO 100V TRENCH POWER MOSFETS


    Original     		IXTF280N055T IXTF250N075T IXTF230N085T IXTF200N10T E153432) IXFP14N60P 2000TM IXFC14N60P ISOPLUS247TM com/AN505 isoplus ixys mounting isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXTF200N10T IXTF250N075T IXTF280N055T PDF

    IXLF19N250A

    Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a
    Text: 2 5 0 0 V / 4 0 0 0 V V E RY H I G H V O LTA G E V H V I G B T S - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F SUMMARY TABLE 2500V/4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH VOLTAGE APPLICATIONS


    Original     		500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF

    IGBT 4000V

    Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
    Text: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of


    Original     		000V/40A 2006--IXYS IXEL40N400. IGBT 4000V isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus PDF

    IXFB100N50P

    Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
    Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the


    Original     		PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    IXAN0025

    Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10
    Text: ISOPLUSTM - The Revolution in Discrete Isolation Technique Technical Application IXAN0025 Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which could also be the equipment chassis. The three main reasons for this are: a safety; b) the desire to reduce


    Original     		IXAN0025 ISOPLUS220TM ISOPLUS247TM D-68623 IXAN0025 diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10 PDF

    60N120

    Abstract: induction heat resonant D-68623 V9560 60n12
    Text: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES


    Original     		60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12 PDF

    high frequency inverter for induction heating

    Abstract: solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding
    Text: IXYSPOWER Efficiency Through Technology N E W P R O D U C T B R I E F 1200V GenX3 IGBTs next generation 1200V igbts for power conversion applications march 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor IGBT portfolio to 1200


    Original     		E153432) com/IXAN0022 PB120IGBTA3B3C3 high frequency inverter for induction heating solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding PDF

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 PDF

    60N120

    Abstract: D-68623 IXER60N120 V9560
    Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560 PDF

    35N120D1

    Abstract: D-68623 ISOPLUS weight
    Text: Advanced Technical Information IXER 35N120D1 IC25 NPT3 IGBT with Diode VCES VCE sat typ. in ISOPLUS 247TM = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol


    Original     		35N120D1 247TM E153432 D-68623 ISOPLUS weight PDF

    40N60SCD1

    Abstract: ixkf40n60scd1 IXYS DS 145
    Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873


    Original     		40N60SCD1 E72873 20110201b 40N60SCD1 ixkf40n60scd1 IXYS DS 145 PDF

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original     		35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1 PDF

    solar inverter circuit

    Abstract: 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F IXYS expands its 600V genx3TM IGBT family with silicon carbide anti-parallel diode july 2009 OVERVIEW The recent emergence and commercialization of Silicon Carbide SiC Technology in the power semiconductor industry has brought to light significant performance advances in


    Original     		E153432) com/IXAN0022 pb60IGBTSC solar inverter circuit 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER PDF

    34N80

    Abstract: 34N8
    Text: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ


    Original     		ISOPLUS247TM 34N80 247TM E153432 34N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage IGBT Phase-Leg FII24N170AH1 VCES = = IC25 VCE sat  tfi(typ) = 3 5 4 (Electrically Isolated Tab) 1700V 18A 6V 45ns 1 2 Symbol Test Conditions VCES TJ VGES ISOPLUS i4-PACTM Maximum Ratings = 25°C to 150°C


    Original     		FII24N170AH1 338B2 PDF