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    ISOTOP MOSFET 100V Search Results

    ISOTOP MOSFET 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    ISOTOP MOSFET 100V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E250NS10

    Abstract: JESD97 STE250NS10 isotop mosfet 100V
    Text: STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE250NS10 100V <0.0055Ω 220A • Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of


    Original     		STE250NS10 E250NS10 E250NS10 JESD97 STE250NS10 isotop mosfet 100V PDF

    e180ne10

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		STE180NE10 STE180NE10 E180NE10 PDF

    e180ne10

    Abstract: isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		STE180NE10 e180ne10 isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97 PDF

    e180ne10

    Abstract: E180N STE180NE10 STE180N JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		STE180NE10 e180ne10 E180N STE180NE10 STE180N JESD97 PDF

    isotop mosfet 180A 100V

    Abstract: "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v
    Text: POWER TRACTION Driver & Breaking . 12/24/48V STMicroelectronics SOLUTIONS Direction Control Panel RECOMMENDED DEVICES MAIN FEATURES Drive & Break L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV / 12006TV High Current Gate Driver 8Apeak Mosfet ISOTOP 60/100V, 250/180A


    Original     		12/24/48V L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV 12006TV 60/100V, 250/180A O-247 isotop mosfet 180A 100V "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v PDF

    STE250NS10

    Abstract: No abstract text available
    Text: STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET POWER MOSFET TYPE STE250NS10 • ■ ■ VDSS RDS on ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL


    Original     		STE250NS10 STE250NS10 PDF

    Ultrasonic welding circuit diagram

    Abstract: STE250NS10
    Text: STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET POWER MOSFET TYPE STE250NS10 • ■ ■ VDSS R DS on ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL


    Original     		STE250NS10 Ultrasonic welding circuit diagram STE250NS10 PDF

    STE180N10

    Abstract: Ultrasonic welding circuit diagram S18000
    Text: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		STE180N10 STE180N10 Ultrasonic welding circuit diagram S18000 PDF

    200V 200A mosfet

    Abstract: SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2
    Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		APT20M22JVRU2 OT-227) 200V 200A mosfet SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2 PDF

    APT10M11JVRU2

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		APT10M11JVRU2 OT-227) APT10M11JVRU2 MOSFET Module 100v 1000A PDF

    3C043

    Abstract: No abstract text available
    Text: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD


    OCR Scan     		STE180N 3C04390 3C043 PDF

    Untitled

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    OCR Scan     		STE180N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		APT10M11JVRU2 OT-227) PDF

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		STE180NE10 isotop mosfet 180A 100V STE180NE10 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		APT10M11JVRU2 OT-227) PDF

    Ultrasonic welding circuit diagram

    Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		STE180NE10 Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET PDF

    isotop mosfet 180A 100V

    Abstract: STE180N10
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		STE180N10 isotop mosfet 180A 100V STE180N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon


    Original     		APT10M11JVRU3 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT33N90JCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET Power Module K D Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		APT33N90JCU2 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET SiC chopper diode Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		APT33N90JCCU2 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		APT10M11JVRU3 OT-227) PDF

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink PDF

    Untitled

    Abstract: No abstract text available
    Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		APT58M50JCU2 OT-227) PDF

    transistors mj 1504

    Abstract: APT0502
    Text: APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		APT33N90JCCU2 OT-227) transistors mj 1504 APT0502 PDF