CPH5617
Abstract: MARKING FZ TA-3722
Text: CPH5617 Ordering number : EN7370A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.
|
Original
|
CPH5617
EN7370A
PW10s,
CPH5617
MARKING FZ
TA-3722
|
PDF
|
TA-3264
Abstract: ENN6973
Text: Ordering number : ENN6973 MCH6618 N-Channel and P-Channel Silicon MOSFETs MCH6618 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6618] 0.3 4 5 6 3 2 0.65 1 0.15 0.25 0.07 The MCH6618 encapsulates an N-channel MOSFET and a P-channel MOSFET that feature low
|
Original
|
ENN6973
MCH6618
MCH6618]
MCH6618
TA-3264
ENN6973
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
|
Original
|
EN6920A
MCH6613
MCH6613
900mm2information
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3LN01C Ordering number : EN6260A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN01C General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
EN6260A
3LN01C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
|
Original
|
EN6920B
MCH6613
MCH6613
PW10s,
900movement,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
EN7015A
EC4401C
|
PDF
|
3LN01SS
Abstract: No abstract text available
Text: Ordering number : ENN6546 3LN01SS N-Channel Silicon MOSFET 3LN01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2179 [3LN01SS] 0.3 1.4 0.25 0.1 2 0.3 1 0.45
|
Original
|
ENN6546
3LN01SS
3LN01SS]
3LN01SS
|
PDF
|
EC4401C
Abstract: TA-3277
Text: Ordering number : ENN7015 EC4401C N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2197 [EC4401C] 0.5 0.3 0.05 0.2 4
|
Original
|
ENN7015
EC4401C
EC4401C]
E-CSP1008-4
EC4401C
TA-3277
|
PDF
|
MCH6614
Abstract: No abstract text available
Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby
|
Original
|
ENN6795
MCH6614
MCH6614
MCH6614]
|
PDF
|
MCH6602
Abstract: ER 2509
Text: Ordering number:ENN6445 N-Channel Silicon MOSFET MCH6602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6602] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one
|
Original
|
ENN6445
MCH6602
MCH6602]
MCH6602
ER 2509
|
PDF
|
TA3722
Abstract: marking FZ TA-3722 CPH5617 pgd250 TA-372
Text: Ordering number : ENN7370 CPH5617 N-Channel Silicon MOSFET CPH5617 Ultrahigh-Speed Switching Applications • unit : mm 2168 [CPH5617] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the
|
Original
|
ENN7370
CPH5617
CPH5617]
TA3722
marking FZ
TA-3722
CPH5617
pgd250
TA-372
|
PDF
|
EC4401C
Abstract: TA-3277
Text: EC4401C 注文コード No. N 7 0 1 5 A 三洋半導体データシート 半導体ニューズ No.N7015 とさしかえてください。 EC4401C N チャネル MOS 型シリコン電界効果トランジスタ 小信号スイッチインタフェース用
|
Original
|
EC4401C
N7015
IT00038
150mA
IT00037
IT00039
IT00040
IT00236
EC4401C
TA-3277
|
PDF
|
MCH6931
Abstract: No abstract text available
Text: MCH6931 Ordering number : ENN8037 MCH6931 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density
|
Original
|
MCH6931
ENN8037
MCH6931
|
PDF
|
MCH6631
Abstract: No abstract text available
Text: Ordering number : ENN7444 MCH6631 N-Channel and P-Channel Silicon MOSFETs MCH6631 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6631] 0.3 4 0.25 2.1 • The MCH6631 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
ENN7444
MCH6631
MCH6631]
MCH6631
|
PDF
|
|
|
smd schottky diode s4 53
Abstract: marking ya 3LN01S
Text: 3LN01S Ordering number : EN6957A SANYO Semiconductors DATA SHEET 3LN01S N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
3LN01S
EN6957A
smd schottky diode s4 53
marking ya
3LN01S
|
PDF
|
EN803
Abstract: EN8039A MCH6935
Text: MCH6935 Ordering number : EN8039A SANYO Semiconductors DATA SHEET MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density
|
Original
|
MCH6935
EN8039A
EN803
EN8039A
MCH6935
|
PDF
|
IT0251
Abstract: ta2909 MCH6614 TA-2909
Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
MCH6614
N6795
900mm2
--200mA
900mm2
IT02517
IT02516
IT02518
IT0251
ta2909
MCH6614
TA-2909
|
PDF
|
MCH6628
Abstract: No abstract text available
Text: 注文コード No. N 7 9 1 9 MCH6628 三洋半導体データシート N MCH6628 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを
|
Original
|
MCH6628
900mm
--10V
IT03374
IT03370
900mm2
IT03377
MCH6628
|
PDF
|
WF24
Abstract: TA-3770 MCH6631
Text: 注文コード No. N 7 4 4 4 MCH6631 三洋半導体データシート N MCH6631 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを
|
Original
|
MCH6631
900mm2
IT04360
IT04359
IT04355
900mm2
IT04362
WF24
TA-3770
MCH6631
|
PDF
|
MCH6618
Abstract: TA-3264
Text: MCH6618 注文コード No. N 6 9 7 3 A 三洋半導体データシート 半導体ニューズ No.N6973 をさしかえてください。 MCH6618 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
MCH6618
N6973
900mm2
IT00113
IT00040
--10V
--70mA
150mA
900mm2
MCH6618
TA-3264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN6957C 3LN01S N-Channel Small Signal MOSFET http://onsemi.com 30V, 0.15A, 3.7Ω, Single SMCP Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
EN6957C
3LN01S
|
PDF
|
SCH2602
Abstract: No abstract text available
Text: SCH2602 Ordering number : ENN8323 N-Channel and P-Channel Silicon MOSFETs SCH2602 General-Purpose Switching Device Applications Features • • • The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting.
|
Original
|
SCH2602
ENN8323
SCH2602
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EC4401C Ordering number : EN7015A N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
|
Original
|
EC4401C
EN7015A
EC4401C/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6602 Ordering number : EN6445C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6602 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
|
Original
|
MCH6602
EN6445C
900mm2Ã
|
PDF
|