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Catalog Datasheet	MFG & Type	PDF	Document Tags
diode RL-250 Abstract: No abstract text available Text: Ordering number:ENN6130 N-Channel Silicon MOSFET 5LN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1	Original	PDF	ENN6130 5LN02M 5LN02M] diode RL-250
bx 18A Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282 Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	PDF	2SJ268 IT00284 --30V --10V ITR00282 IT00285 IT00286 IT00287 bx 18A 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Untitled Abstract: No abstract text available Text: 5LN02M Ordering number : EN6130A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	EN6130A 5LN02M
Untitled Abstract: No abstract text available Text: 5LN02M Ordering number : EN6130A N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol	Original	PDF	5LN02M EN6130A
5LN02M Abstract: D1099 Text: 5LN02M Ordering number : EN6130A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	5LN02M EN6130A 5LN02M D1099