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    IT009 Search Results

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    IT009 Price and Stock

    DFRobot FIT0096

    BREADBRD TERM STRIP 3.20X2.00"
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    Cypress Semiconductor CY8CKIT-009A

    NO WARRANTY
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    DigiKey CY8CKIT-009A Box 567 1
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    DFRobot FIT0099

    BREADBOARD GENERAL PURPOSE PTH
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    TME FIT0099 7 1
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    DFRobot KIT0090

    INSECTBOT HEXA ROBOT KIT ARDUINO
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    DFRobot KIT0099

    HOT END KIT FOR OVERLORD 3D PRIN
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    DigiKey KIT0099 Bulk 1
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    Find more IT009 price and stock on Findchips.com

    IT009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KT 505

    Abstract: SVC348
    Text: Ordering number:ENN6263A Hyper-Abrupt Junction Type Silicon Composite Varactor SVC348 AM Low Voltage Electronic Tuning Applications Features Package Dimensions unit:mm 1292 [SVC348] 2.2 4.0 3.0 • Twin type varactor diode for AM electronic tuning use. · High capacitance ratio and high quality factor.


    Original     		PDF ENN6263A SVC348 SVC348] SVC348 KT 505

    power control 62613

    Abstract: TA75107 1SV315 ENN6261
    Text: Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Package Dimensions unit:mm 1246A [1SV315] 0.425 • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller.


    Original     		PDF ENN6261 1SV315 1SV315] 1SV315-applied power control 62613 TA75107 1SV315 ENN6261

    TA-2054

    Abstract: 5C22 NTE 2054 D2005 FTD2005
    Text: Ordering number:ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2005]


    Original     		PDF ENN6429 FTD2005 FTD2005] TA-2054 5C22 NTE 2054 D2005 FTD2005

    D2017

    Abstract: TA-2502 FTD2017
    Text: Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2017] 3.0 0.65 0.425


    Original     		PDF ENN6361 FTD2017 FTD2017] D2017 TA-2502 FTD2017

    TA-2415

    Abstract: 1SV294
    Text: 注文コード No. N 5 1 3 6 A 1SV294 No. N 5 1 3 6 A 60500 半導体ニューズ No.5136 とさしかえてください。 1SV294 特長 シリコンエピタキシァル PIN 形ダイオード 可変抵抗減衰器用 ・小型外形のため高密度実装および小形設計が可能である。


    Original     		PDF 1SV294 100MHz IT00996 IT00995 IT00993 IT01010 TA-2415 1SV294

    FTS2005

    Abstract: S2005
    Text: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4


    Original     		PDF ENN6347 FTS2005 FTS2005] FTS2005 S2005

    D2470

    Abstract: SVC348
    Text: 注文コード No. N 6 2 6 3 SVC348 No. 6 2 6 3 三洋半導体ニューズ 61099 新 SVC348 特長 シリコン超階段接合形複合可変容量ダイオード AM 低電圧電子同調用 ・ツインタイプの AM 電子同調用可変容量ダイオードである。


    Original     		PDF SVC348 11MHz 20mVrms TA-2429 IT00997 IT00998 D2470 SVC348

    Untitled

    Abstract: No abstract text available
    Text: 1SV315 Ordering number : EN6261A SANYO Semiconductors DATA SHEET 1SV315 Silicon Epitaxial Pin Diode Variabe resistance Attenuator Use Features • • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller


    Original     		PDF 1SV315 EN6261A 1SV315-applied

    J520

    Abstract: 2SJ520 IT00955
    Text: Ordering number:ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2083B [2SJ520] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate


    Original     		PDF ENN6435 2SJ520 2083B 2SJ520] 2092B J520 2SJ520 IT00955

    6264

    Abstract: SVC383 marking V3
    Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.


    Original     		PDF ENN6264 SVC383 SVC383 SVC383-applied SVC383] 6264 marking V3

    D2695

    Abstract: 1SV298 MARKING QV
    Text: Ordering number : ENN5224B 1SV298 Silicon Epitaxial PIN Diode 1SV298 π Type Attenuator Applications Features • Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. Small interterminal capacitance C=0.23pF typ .


    Original     		PDF ENN5224B 1SV298 1SV298] D2695 1SV298 MARKING QV

    varactor diode AM

    Abstract: SVC348
    Text: Ordering number:ENN6263 Hyper-Abrupt Junction Type Silicon Composite Varactor SVC348 AM Low Voltage Electronic Tuning Applications Features Package Dimensions unit:mm 1292 [SVC348] 2.2 4.0 3.0 • Twin type varactor diode for AM electronic tuning use. · High capacitance ratio and high quality factor.


    Original     		PDF ENN6263 SVC348 SVC348] SVC348 varactor diode AM

    2SJ520

    Abstract: J520
    Text: Ordering number:ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2083B [2SJ520] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate


    Original     		PDF ENN6435 2SJ520 2083B 2SJ520] 2092B 2SJ520 J520

    FW313

    Abstract: W313
    Text: Ordering number:ENN6389 N-Channel and P-Channel Silicon MOSFETs FW313 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2129 [FW313] 8 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2


    Original     		PDF ENN6389 FW313 FW313] FW313 W313

    1SV316

    Abstract: ENN6262
    Text: Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Package Dimensions • Ultrasmall-sized package facilitates high-density mounting and permits 1SV316-applied equipment to be made smaller. · Small interterminal capacitance C=0.23pF typ .


    Original     		PDF ENN6262 1SV316 1SV316-applied 1SV316] 1SV316 ENN6262

    1SV294

    Abstract: marking PV
    Text: Ordering number : ENN5136A 1SV294 Silicon Epitaxial PIN Diode 1SV294 Variable Resistance Attenuator Use Features Small-sized package facilitates high-density mounting and permits 1SV294-applied equipment to be made smaller. Small interterminal capacitance C=0.23pF typ .


    Original     		PDF ENN5136A 1SV294 1SV294-applied 1SV294] 1SV294 marking PV

    TA-2424

    Abstract: 1SV316
    Text: 注文コード No. N 6 2 6 2 1SV316 No. 6 2 6 2 三洋半導体ニューズ 62599 新 1SV316 特長 シリコンエピタキシァル PIN 形ダイオード 可変抵抗減衰器用 ・超小型外形のため高密度実装および小型設計が可能である。


    Original     		PDF 1SV316 100MHz IT00994 IT00996 IT00995 IT00993 IT01010 TA-2424 1SV316

    D2019

    Abstract: 63831 TA 2503 FTD2019 IT00934 g1id
    Text: Ordering number:ENN6383 N-Channel Silicon MOSFET FTD2019 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2019] 3.0 0.65 0.425


    Original     		PDF ENN6383 FTD2019 FTD2019] D2019 63831 TA 2503 FTD2019 IT00934 g1id

    D2695

    Abstract: 1SV298 marking QV
    Text: Ordering number : ENN5224B 1SV298 Silicon Epitaxial PIN Diode 1SV298 π Type Attenuator Applications Features • Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. Small interterminal capacitance C=0.23pF typ .


    Original     		PDF ENN5224B 1SV298 1SV298] D2695 1SV298 marking QV

    J485

    Abstract: 2SJ485 TA-250-4
    Text: Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ485] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6


    Original     		PDF ENN6434 2SJ485 2083B 2SJ485] 2092B J485 2SJ485 TA-250-4

    Untitled

    Abstract: No abstract text available
    Text: 1SV315 Ordering number : EN6261A SANYO Semiconductors DATA SHEET 1SV315 Silicon Epitaxial Pin Diode Variabe resistance Attenuator Use Features • • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller


    Original     		PDF 1SV315 EN6261A 1SV315-applied 023A-0.

    CPH4

    Abstract: 1SV298H
    Text: Ordering number : ENN*6949 1SV298H Silicon Epitaxial PIN Diode 1SV298H π Type Attenuator Applications Preliminary Features Composite type with 3 diodes contained in the CPH package currently in use, improving the mounting efficiency greatly. Small interterminal capacitance C=0.23pF typ .


    Original     		PDF 1SV298H 1SV298H] CPH4 1SV298H

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6261A 1SV315 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=typ 6Ω, MCP Features • • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller


    Original     		PDF EN6261A 1SV315 1SV315-applied

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Is a H yo i Variabe resistance Attenuator Use Features Package Dimensions • Ultrasmall-sized package facilitates high-density mounting and permits lSV 315-applied equipment to be made smaller. • Small interterminal capacitance C =0.23pF typ .


    OCR Scan     		PDF ENN6261 1SV315 315-applied 1SV315] 73099G QQE3343 IT00993 1T00995 IT00996