J652
Abstract: No abstract text available
Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]
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ENN7625
2SJ652
2SJ652]
O-220ML
J652
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j652
Abstract: No abstract text available
Text: Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET http://onsemi.com –60V, –28A, 38mΩ, TO-220F-3SG Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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EN7625A
2SJ652
O-220F-3SG
4360pF
PW10s,
--30V,
--28A
L500H,
j652
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Untitled
Abstract: No abstract text available
Text: 2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications
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Original
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2SJ652
EN7625A
4360pF
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PDF
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j652
Abstract: 2SJ652
Text: 2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications
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Original
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EN7625A
2SJ652
4360pF
PW10s,
--30V,
j652
2SJ652
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PDF
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J652
Abstract: 2SJ652
Text: 注文コード No. N 7 6 2 5 2SJ652 三洋半導体データシート N 2SJ652 特長 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。
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Original
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2SJ652
--112A
IT06541
--10V
IT06543
IT06545
IT06544
J652
2SJ652
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PDF
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j652
Abstract: 2SJ652
Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]
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Original
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ENN7625
2SJ652
2SJ652]
O-220ML
j652
2SJ652
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PDF
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