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Catalog Datasheet	MFG & Type	Document Tags	PDF
a1235 Abstract: No abstract text available Text: SCH2310 Ordering number : ENA1235 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2310 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	SCH2310 ENA1235 PW10s, 900mm A1235-4/4 a1235	PDF
Untitled Abstract: No abstract text available Text: 6LP04MH Ordering number : ENA0457 P-Channel Silicon MOSFET 6LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC	Original	6LP04MH ENA0457 900mm2â 6LP04MH/D	PDF
A1238 Abstract: A12381 Text: EC4306C Ordering number : ENA1238 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4306C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C	Original	EC4306C ENA1238 PW10s, 145mm80mm1 A1238-4/4 A1238 A12381	PDF
A1236 Abstract: marking xs A12364 A1236-4 6lp04 Text: 6LP04S Ordering number : ENA1236 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	6LP04S ENA1236 PW10s, 145mm80mm1 A1236-4/4 A1236 marking xs A12364 A1236-4 6lp04	PDF
A1235 Abstract: A12354 Text: SCH2310 注文コード No. N A 1 2 3 5 三洋半導体データシート N SCH2310 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・1.5V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	SCH2310 900mm2 IT11260 --100mA PW10s --400mA 900mm2 IT13773 A1235 A12354	PDF
6LP04MH Abstract: No abstract text available Text: 6LP04MH Ordering number : ENA0457 P-Channel Silicon MOSFET 6LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS	Original	6LP04MH ENA0457 900mm2 A0457-4/4 6LP04MH	PDF
Untitled Abstract: No abstract text available Text: MCH6653 Ordering number : ENA1239 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6653 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	MCH6653 ENA1239 PW10s, 900mm A1239-4/4	PDF
A1239 Abstract: No abstract text available Text: MCH6653 注文コード No. N A 1 2 3 9 三洋半導体データシート N MCH6653 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・1.5V 駆動。・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。	Original	MCH6653 900mm2 --100mA IT11260 PW10s --400mA 900mm2 IT13776 A1239	PDF
a1237 Abstract: SSFP package A1237-1 6lp04ss 6lp04 Text: 6LP04SS Ordering number : ENA1237 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter	Original	6LP04SS ENA1237 PW10s, 145mm80mm1 A1237-4/4 a1237 SSFP package A1237-1 6lp04ss 6lp04	PDF
A1234 Abstract: 6LP04CH 6lp04 Text: 6LP04CH Ordering number : ENA1234 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage	Original	6LP04CH ENA1234 PW10s, 900mm20 A1234-4/4 A1234 6LP04CH 6lp04	PDF