Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1886A ECH8419 N-Channel Power MOSFET http://onsemi.com 35V, 9A, 17mΩ, Single ECH8 Features • • • • ON-resistance RDS on 1=13mΩ (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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ENA1886A
ECH8419
PW10s,
900mm2
A1886-7/7
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PDF
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a1815
Abstract: PH2001 WPH2001 TO-3PMLH RB 72A IT03005 npn 10a 800v IT03007
Text: WPH2001 注文コード No. N A 1 8 1 5 三洋半導体データシート N WPH2001 NPN 三重拡散プレーナ型シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・ tf=0.2 s max ・ VCBO=1500V 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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Original
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WPH2001
PH2001
90110KC
TC-00002421
A1815-1/4
IT15872
IT03008
IT15873
IT15874
a1815
PH2001
WPH2001
TO-3PMLH
RB 72A
IT03005
npn 10a 800v
IT03007
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1816A SFT1440 N-Channel Power MOSFET http://onsemi.com 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS on =6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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Original
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ENA1816A
SFT1440
PW10s)
PW10s,
A1816-9/9
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PDF
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W906
Abstract: FW906
Text: FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
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Original
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FW906
ENA1809
PW100ms)
PW10s)
A1809-6/6
W906
FW906
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PDF
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MCH3479
Abstract: SC82
Text: MCH3479 Ordering number : ENA1813 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3479 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=49mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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MCH3479
ENA1813
PW10s,
900mm2
A1813-4/4
MCH3479
SC82
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PDF
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Untitled
Abstract: No abstract text available
Text: BMS4007 Ordering number : ENA1820 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BMS4007 General-Purpose Switching Device Applications Features ON-resistance RDS on =6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive • • • Specifications
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Original
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BMS4007
ENA1820
9700pF
A1820-5/5
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PDF
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Untitled
Abstract: No abstract text available
Text: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
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Original
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FW907
ENA1810
100ms)
A1810-6/6
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PDF
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Untitled
Abstract: No abstract text available
Text: BMS4007 Ordering number : ENA1820 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BMS4007 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications
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Original
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BMS4007
ENA1820
9700pF
A1820-5/5
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PDF
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a1817
Abstract: S-80W
Text: Ordering number : ENA1817A SB80W10T Schottky Barrier Diode http://onsemi.com 100V, 8A, Low IR, Monolithic Dual TP Common Cathode Features • VF max=0.8V • IR max=0.1mA • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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Original
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ENA1817A
SB80W10T
A1817-7/7
a1817
S-80W
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PDF
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Untitled
Abstract: No abstract text available
Text: FW707 Ordering number : ENA1805 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FW707 General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package
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Original
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ENA1805
FW707
PW10s)
PW100ms)
2000mm2
PW10s
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PDF
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Untitled
Abstract: No abstract text available
Text: MCH3479 Ordering number : ENA1813A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3479 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=49mΩ (typ.) 1.8V drive Halogen free compliance Protection diode in
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Original
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ENA1813A
MCH3479
PW10s,
900mm2
019A-003
MCH3479-TL-H
A1813-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: ECH8419 Ordering number : ENA1886A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8419 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=13mΩ (typ.) 4V drive Halogen free compliance Protection diode in
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Original
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ENA1886A
ECH8419
PW10s,
900mm2
011A-002
A1886-7/7
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PDF
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ENA1805
Abstract: No abstract text available
Text: FW707 Ordering number : ENA1805 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FW707 General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package
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Original
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FW707
ENA1805
PW10s)
PW100ms)
ENA1805
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PDF
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BMS4007
Abstract: No abstract text available
Text: BMS4007 Ordering number : ENA1820 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BMS4007 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications
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Original
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BMS4007
ENA1820
9700pF
PW10s,
A1820-5/5
BMS4007
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PDF
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W906
Abstract: A1809 mos n-ch IT15834
Text: FW906 注文コード No. N A 1 8 0 9 三洋半導体データシート N FW906 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
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Original
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FW906
100ms
2000mm2
005A-003
SC-87,
2000mm2
IT15840
A1809-5/6
W906
A1809
mos n-ch
IT15834
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PDF
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Untitled
Abstract: No abstract text available
Text: SFT1440 Ordering number : ENA1816A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1440 General-Purpose Switching Device Applications Features • ON-resistance RDS on =6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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SFT1440
ENA1816A
A1816-9/9
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PDF
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Untitled
Abstract: No abstract text available
Text: FW812 Ordering number : ENA1806 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW812 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
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Original
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ENA1806
FW812
PW10s)
2000mm2
PW10s
A1806-4/4
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PDF
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A1816
Abstract: SFT1440-TL-E
Text: SFT1440 Ordering number : ENA1816A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1440 General-Purpose Switching Device Applications Features • ON-resistance RDS on =6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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ENA1816A
SFT1440
PW10s)
PW10s,
SFT1440-E
A1816-9/9
A1816
SFT1440-TL-E
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PDF
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CPH3253
Abstract: A1814 SC-95
Text: CPH3253 Ordering number : ENA1814 SANYO Semiconductors DATA SHEET CPH3253 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • Collector-to-Base Voltage VCBO=700V min Fall Time tf=0.5 s (max) Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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CPH3253
ENA1814
PW300s,
cycle10%
600mm2
A1814-4/4
CPH3253
A1814
SC-95
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PDF
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A1814
Abstract: No abstract text available
Text: CPH3253 注文コード No. N A 1 8 1 4 三洋半導体データシート N CPH3253 NPN 三重拡散プレーナ型シリコントランジスタ スイッチング電源用 特長 ・ コレクタベース電圧 VCBO=700V min ・ 下降時間 tf=0.5 s(max)
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Original
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CPH3253
SC-96,
SC-95,
OT346,
OT457
600mm2
015A-003
90810CB
IT15941
A1814
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PDF
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Untitled
Abstract: No abstract text available
Text: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
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Original
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FW907
ENA1810
100ms)
A1810-6/6
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PDF
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Untitled
Abstract: No abstract text available
Text: ECH8419 Ordering number : ENA1886 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8419 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=13mΩ (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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ECH8419
ENA1886
900mm2Ã
A1886-4/4
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PDF
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Untitled
Abstract: No abstract text available
Text: VF001E5 Ordering number : ENA1807 SANYO Semiconductors DATA SHEET VF001E5 2 Channel EMI Filter with ESD Protection Features • • • • EMI Filter 2 channel fc=90MHz Contact discharge 18kV guarantee (IEC61000-4-2) Small-size package (ECSP1208-5 : 1.2 x 0.8 mm)
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Original
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VF001E5
ENA1807
90MHz)
IEC61000-4-2)
ECSP1208-5
A1807-3/3
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u i m TECHNOLOGY LT1581/LT1581-2.5 1OA, Very Low Dropout Regulator F€ATUA€S DCSCRIPTIOn • ■ ■ ■ ■ ■ The LT 1581 is a 10A low dropout regulator designed to power the new generation of microprocessors. The drop out voltage of this device is 100mV at light loads rising to
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OCR Scan
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LT1581/LT1581-2
100mV
430mV
LT1584.
LTC1435
LT1575/LT1577
LT1580
LT1584
LT1585
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PDF
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