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    STMicroelectronics ITRON01TR

    ITRON L6566 CUSTOM - Bulk (Alt: ITRON01TR)
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    Bristol Electronics ITRON01TR 170 2
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    Quest Components ITRON01TR 136
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    STMicroelectronics NRE-ITRON

    ITRON L6566 CUSTOM - Virtual or Non-Physical Inventory (Software & Literature) (Alt: NRE-ITRON)
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    Crowd Supply CS-CHIBITRONICS-07

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    Mouser Electronics CS-CHIBITRONICS-07 4
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    HEX HEAD CAP SCREWS 3/8-16X1 1/2 NITRONIC 60

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    HEX HEAD CAP SCREWS 3/8-16X1 1/4 NITRONIC 60

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    ITRON Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CU20049SCPB-T20A Itron Electronics Vacuum Flourescent Display Module Scan PDF
    JHD204A Itron Electronics 20 CHAR x 4 ROW LCD Display Unit Original PDF

    ITRON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    jumo itron 702042

    Abstract: jumo ITRON 702043 JUMO ITRON 04 jumo itron JUMO ITRON 04 b 70.2040 Jumo 70.2041 PT1000 JUMO type 15 JUMO itRON 34 C1213
    Text: b70.2040en.bk Seite 1 Mittwoch, 19. November 2008 10:15 10 Type 702042 Type 702044 Type 702041 JUMO iTRON Type 702043 Compact microprocessor controllers B 70.2040 Operating Instructions Type 702040 2008-11-11/00357918 b70.2040en.bk Seite 2 Mittwoch, 19. November 2008 10:15 10


    Original     		2040en 315-697-JUMO 1-800-554-JUMO jumo itron 702042 jumo ITRON 702043 JUMO ITRON 04 jumo itron JUMO ITRON 04 b 70.2040 Jumo 70.2041 PT1000 JUMO type 15 JUMO itRON 34 C1213 PDF

    PC437

    Abstract: CU24063-Y1A PC860 DS-1552-0001-01 noritake itron CU24063
    Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24063-Y1A Specification No: DS-1552-0001-01 Date of Issue: December 5, 2008 00 Revision: December 17, 2008 (01) Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp


    Original     		2002/95/EC CU24063-Y1A DS-1552-0001-01 DS-1552-0001-00 PC437 CU24063-Y1A PC860 DS-1552-0001-01 noritake itron CU24063 PDF

    GU140X32F-7000

    Abstract: GU140X32F WPC1252 5x7 within 6x8 font PC437 PC860 PC865 PC858 7x8 font
    Text: Vacuum Fluorescent Display Module Specification Model: GU140X32F-7000 Specification No: DS-916-0001-03 Date Of Issue: April 11 , 2002 Revision: June 13 , 2002 July 03, 2002 August 30, 2002 Published by NORITAKE ITRON CORP. / Japan http://www.itron-ise.co.jp/


    Original     		GU140X32F-7000 DS-916-0001-03 GU140X32F-7000 GU140X32F WPC1252 5x7 within 6x8 font PC437 PC860 PC865 PC858 7x8 font PDF

    YL303H

    Abstract: electric power saver circuits NORITAKE ITRON VFD MODULES 96 x 23 CU24043-Y100 PC858 font display vfd PC437 140CD Receipt font Noritake FONT TABLE
    Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24043-Y100 Specification No: DS-1570-0001-00 Date of Issue: January 29, 2009 00 Revision: Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.


    Original     		2002/95/EC CU24043-Y100 DS-1570-0001-00 YL303H electric power saver circuits NORITAKE ITRON VFD MODULES 96 x 23 CU24043-Y100 PC858 font display vfd PC437 140CD Receipt font Noritake FONT TABLE PDF

    GU128X64-800B

    Abstract: GU128x64 Vacuum Fluorescent Display NORITAKE ITRON VFD MODULES 128 x 64 "Graphic Display" vfd itron 128x64 128X64 character font table connector 26pin MIN20 vfd display japan
    Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X64-800B Specification No: DS-1239-0000-03 Date of Issue: May 19, 2005 Revision: May 1, 2006 December 20, 2007 January 23, 2008 : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.


    Original     		2002/95/EC GU128X64-800B DS-1239-0000-03 GU128X64-800B GU128x64 Vacuum Fluorescent Display NORITAKE ITRON VFD MODULES 128 x 64 "Graphic Display" vfd itron 128x64 128X64 character font table connector 26pin MIN20 vfd display japan PDF

    DS-952-0001-01

    Abstract: PC437 GU280X16G-7002 description of power saver block diagram HT 7002 vfd segment ds vfd PC860 PC865 WPC1252
    Text: Vacuum Fluorescent Display Module Specification Model: GU280X16G-7002 Specification No: DS-952-0001-01 Date Of Issue: August 30, 2002 Revision: November 12, 2002 June 14, 2004 Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.


    Original     		GU280X16G-7002 DS-952-0001-01 DS-952-0001-01 PC437 GU280X16G-7002 description of power saver block diagram HT 7002 vfd segment ds vfd PC860 PC865 WPC1252 PDF

    sfn065d

    Abstract: itron 406
    Text: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150


    OCR Scan     		T-39-11 SFN065D 5M6-24UNF-2A P06fTKM eA03AT sfn065d itron 406 PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: itronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 PDF

    1N47A

    Abstract: No abstract text available
    Text: itronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)


    OCR Scan     		1N42S 1N1735 1N2620 1N2620A 1N2620B 1N2621 1N2621A 1N2621S 1N2622 1N2622A 1N47A PDF

    2n1478

    Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150


    OCR Scan     		2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2n1478 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886 PDF

    43fj

    Abstract: S50A3100 S50A315HE S50A360FR S50A360S7
    Text: 15E 0 I 75G3fc»S0 QOQDÔHt. t | R S M ELECTRON/SENS ITRON 7 ^ 3 -0? Ts S ENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 TECHNICAL SPECIFICATIONS AVAILABLE W ITH THREE PHASE BRIDGE RECTIFIER


    OCR Scan     		75D3tSD 43fj S50A3100 S50A315HE S50A360FR S50A360S7 PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    SK-68

    Abstract: SK6805
    Text: VMWl POSTROMC INDUSTRIES BGJEVES THE DATA ON TH B DRMMN8 TO B E RELIABLE, SM C E THE TECHNGN. INFORMATION IS 6MEN FREE O F CHARGE, THE USER EMPLOYS SUCH MFORfcWDON AT H B OWN D 6C R EIN N AND RISK. POS ITRON« M DU5TRE5 ASSUM ES NO RESFO N SB U IY FOR RESULTS OBTAINED OR DAMAGES


    OCR Scan     		32S600X SK6805 SK-68 SK6805 PDF

    SFN232

    Abstract: T-39
    Text: 8368602 SOL ITRON DEVICES iE I a a t a t a a aooscmi i | 70C 02049 1 1 SWITCH MOS SFN232 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS VDS PD *L Tj oper T „ stg Drain Current, Continuous @ T *25°C c Drain Current, Pulsed A • VGS V 200 o IDM Voltage, Drain to Source


    OCR Scan     		T-39-11 D00ED4T SFN232 1J4-28UNF-ZA 5M6-24UNF-2A 050-MAX. SFN232 T-39 PDF

    SFN451A

    Abstract: T-39
    Text: 8368602 SOL ITRON DEVICES INC SFN451A 70C 02092 D^ ^DeTJ fl3L,flbD2 QOGHOTS o SWITCH MOS PACKAGE TO -3 POWER MOS MAXIMUM RATINGS SYMBOL VDS XD *DM VGS PD *L ^J oper T „ stg UNITS PARAMETER Voltage, Drain Co Source 450 V Drain Current, Continuous @ Tc«25°C


    OCR Scan     		SFN451A 1J4-28UNF-ZA 5M6-24UNF-2A 050-MAX. T-39 PDF

    bul 3040

    Abstract: BUL 512 HI SFN433 T-39 10-32 UNF 2A
    Text: 8368602 SOL ITRON DEVICES INC SFN433 70C 02086 SWITCH MOS PA CKA G E TO-3 D T-39-11 f l 3 b ô t i0 a o o o a o f lt . 4 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D ZDM VGS PD XL ^J oper T stg * UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T =25°C


    OCR Scan     		T-39-11 SFN433 1J4-28UNF-ZA 5M6-24UNF-2A 050-MAX. bul 3040 BUL 512 HI T-39 10-32 UNF 2A PDF

    JAN2N5157

    Abstract: 2N54
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC lF|ä3bflbDS 95D 02851 OOOHfiSl b D |~ T - 3 3 ~ n -JtoUtran ra O M C T ÄTTÄIL ^ Devices, Inc. V E R Y HIGH VOLTAGE, FAST SW ITCHING NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 42 CHIP N U M BER ¿1


    OCR Scan     		PDF

    C124

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S [p œ py ? ©ÄTTÄIL © INC 95D 02 91 5 1S D -f - 45- /r DE~|fl3bflh0H OOOa^lS h | “ ÆfigM.rtàM Devices. Inc M EDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION


    OCR Scan     		305mm) C-124 C124 PDF

    2N3773 equivalent

    Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
    Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		JAN2N3771, JAN2N3772, 2N3773. 2N4347, 2N4348, 2N6262 C-112 2N3773 equivalent transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent PDF

    T-58-H

    Abstract: No abstract text available
    Text: SO LITRO N D EV IC ES INC b l 8 3 6 8 6 0 2 SOL ITRON D E V I C E S D E ^ fl3t.flfe.D2 DD01SD7 _ INC fl Ó1C | ~ 01507 D- T'' C V & f Z Z N ' T ITYP6 N°- dk'r. a _ /o / GROUP A A ND/OR PERFORMANCE CHARACTERISTICS NO. SYM BOL CCNOITIONS


    OCR Scan     		DD01SD7 T-58-H PDF

    solitrondevices

    Abstract: Solitron transistor c47
    Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		000S037 305mm) solitrondevices Solitron transistor c47 PDF

    FTA50V

    Abstract: er c128
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DE I A3bflb02 □OOE'ìl'ì 3 | ~ INC 95D 0 2 9 1 9 Ä1TÄ\[L Q ( Devices, Inc' MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum


    OCR Scan     		A3bflb02 457mm) C-128 FTA50V er c128 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S TS Jm litran INC DE Ì 0 3 h f l b 0 a GDOSTm 95D 0 2 9 1 4 D 4 T _ 7"C mmm •_ * MEDIUM TO HIGH VOLTAGE Devices, Inc. C H IP N U M B ER PIM EPITAXIAL PLAN AR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 À Aluminum


    OCR Scan     		457mm) 1N3899, 1N3900, 1N3901, 1N3902 C-123 PDF

    solitron devices

    Abstract: No abstract text available
    Text: ITRON DEVICES INC bl » F | fl3t,flbD2 D D D m 3 a 3 | ~ 836860 2 SOL ITRON DEV ICES INC _ 61C 01432 - A H 7 =7 7 - 6 9 - Bfi/P type no. C B c r / O f 5 GROUP A AND/OR PERFORMANCE CHARACTERISTICS NO. SYMBOL CONDITIONS 1 vS 2 PisJ 3 <L 4 JzCEQ


    OCR Scan     		fl3bflb05 DDQ14BS solitron devices PDF