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    ITS13C06

    Abstract: ITS13C06P ITS13C06B
    Text: ITS13C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r low pow er dissipation in a w ide range of high voltage


    OCR Scan     		ITS13C06 DS4738 ITS13C06 ITS13C06P ITS13C06B PDF

    POWERLINE 4 PRO

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4738-2 ITS13C06 ITS13C06 POWERLINE 4 PRO PDF

    ITS13C06

    Abstract: ITS13C06P ITS13C06B ITS13 T0247 26-A10
    Text: ITS13C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		ITS13C06 DS4738 ITS13C06 ITS13C06P ITS13C06B ITS13 T0247 26-A10 PDF