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    iCreate Technologies

    Abstract: i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127
    Text: Create i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original
    i5127-L iCreate Technologies i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127 PDF

    Untitled

    Abstract: No abstract text available
    Text: Cre a t e i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


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    i5127-L PDF

    i5128-lg

    Abstract: 330ohm resistor i5128-L i5128 samsung 16GB Nand flash iCreate Technologies I5128LG icreate marking W17 i5128L
    Text: Create i5128-L i5128-L High-Speed USB Flash Disk Controller Data Sheet Version 1.00 iCreate Technologies Corporation Release date: 2006/08/18 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original
    i5128-L i5128-lg 330ohm resistor i5128-L i5128 samsung 16GB Nand flash iCreate Technologies I5128LG icreate marking W17 i5128L PDF

    Untitled

    Abstract: No abstract text available
    Text: Create i5122-L/i5122-LG i5122-L/i5122-LG High-Speed USB Flash Disk Controller Preliminary Data Sheet Version 0.34 iCreate Technologies Corporation Release date: 12/08/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original
    i5122-L/i5122-LG VD33P/VD33 VS33P/VS33 16Gbit PDF

    Untitled

    Abstract: No abstract text available
    Text: Cre a t e i5128-L i5128-L High-Speed USB Flash Disk Controller Data Sheet Version 1.00 iCreate Technologies Corporation Release date: 2006/08/18 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original
    i5128-L PDF

    samsung flash marking

    Abstract: No abstract text available
    Text: Preliminary Create i5128-L i5128-L High-Speed USB Flash Disk Controller Preliminary Data Sheet Version 0.10 iCreate Technologies Corporation Release date: 04/10/2006 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original
    i5128-L samsung flash marking PDF

    AN7410

    Abstract: AN362 an362 Panasonic CI 7410 an362 fm f1010 18k05 vco IF AN-741
    Text: AN7410 7T-5 V 7rffllC AN7410 S te re o Multiplex Demodulator H 1SE # § /D escrip tio n AN 7410 !± , U n i t ! mm F M 7, f l;la st3 -/ 7 P L L 0S S coi*ffl U i L 3 :$ L * - t •/ l ' f - 7 ‘ 1 ' 3 - i t , N, a 7 u r ^ F f f t ' S / l i - f e / h tfj 1C


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    AN7410 10//F-o 015a/F 27kfl 470pFÂ AN7410 AN362 an362 Panasonic CI 7410 an362 fm f1010 18k05 vco IF AN-741 PDF

    E 13007-1

    Abstract: 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007
    Text: Ml L-H-38510/610 25 FEB R U A R Y 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY SRAM , MONOLITHIC SILICON This specification Is approved for use by all Depart­ ments and Agencies of the Department of Defense.


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    MlL-H-38510/610 536-BIT 536-b1t E 13007-1 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    V17410Ais HY51V17410A HY51V1741 D36-00-MAY94 4b75Q HY51V17410A HY51V17410AJ HY51V17410ASLJ HY51V17410AT HY51V1741OASLT PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time


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    IBM0164405B IBM0164405P 128ms 104ns 381mW 00030TE 128ms 115ma PDF

    ED98

    Abstract: 64MEDO
    Text: [ren d s tn M em ory Eecnnoiogy w UMrtH spsea irrpnovemenis nave nisfaricany come from process and photolithography B !3 advances, More recent ¡mpnoYamenlH in DRAM •_■■. I I k'. r-. I ■ .-.r-. . l i - i r I CHI I ■-■'Z I 'h n i L i'V iO V C I.


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    13urst-EDO 64M-EDO ED98 64MEDO PDF

    A91V

    Abstract: A16V N5722 A0642 aafj
    Text: - KNo N * 5 7 2 2 N O . $ 5722 33197 CMOS LSI LE28F4001 AM, ATS, ARS-15 — ' 4M 5 2 4 2 8 8 7 - Mx S t y K ; 7 5 "J mm LE28F4001AM, ATS, A R S ii, 524288 V - V x 8 £ y h Jg rii 0 i t > jK - K » ffi U . I V # - « iM iift jjfjf* 7 •y y -> * J * :') V b S>. MJ )2CMOS@S!8 CD\%m 1C i U . M i«, fflfà


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    LE28F4001AM, ARS-15 5242B87- 150ns 20fiAimai) OP32tJV LE28F4001AM TSOP32ti LE28F4001ATS A91V A16V N5722 A0642 aafj PDF

    BTI ML-1 94V-0

    Abstract: 94V-0 BTI ML-1 TRANSISTOR SMD MARKING CODE ALG horizontal transistor tt 2206 smd transistor marking 44s MEC 1300 nu ALG B7 smd transistor transistor horizontal tt 2206 jj-02 94v-0 gm 5766 lf
    Text: A F C T A B L E \_ J/i \L -\S lH Y iiK C O H N E C T iO N o f c o n t e n t s PRODUCT LINE SERIES NUMBERS SP E C fW JSn S TABLE OF CONTENTS .I~ IV OPEN FRAME SOCKETS


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM Witti WPB DESCRIPTION The HY5116410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY5116410A HY5116410Ato 1AD24-10-MAY94 HY5116410AJ HY5116410ASLJ HY511641 HY5116410ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 7 1 0 0 A S e r ie s 16MX 1-bit CMOS DRAM DESCRIPTION The HY5117100Aisthe new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY5117100Aisthe HY5117100A HV5117100Ato 1AD20-10-MAY94 HY51171OOA 1A020-10-MAYM HY5117100AJ HY5117100ASLJ PDF

    1c09

    Abstract: SR802 SR806
    Text: SR802 - SR815 TAIWAN s —SEM ICONDUCTO R 8.0 AM PS. Schottky Barrier Rectifiers DO-201 AD RoHS COMPLIANCE - s a - Features <> <> ❖ .220 ¡S.E1 . 197 lo.Dl DIA. Low power loss, high officioncy. High current capability, LowVF. High reliabilityHigh surge current capability.


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    SR802 SR815 DO-201 D0-201A 1c09 SR806 PDF

    yx 801

    Abstract: yx 801 led yx 801 ic D78233GC 78234 RJLTC PD78233 EV-9900 TRXT 707 UPD78237
    Text: Mos M O S In te g ra te d C irc u it ,<PD78233,78234,78237,78238 8 bf v b • '> > 7 7°* - 7 j ? n u > \ d : z L — 9 /¿PD78233, 78234, 78237, 7823813:, 78K/II '> U —X'c0|^t?RT'1“o 78K /ÏÏIÏ, ^gPîÈ3itC«i: U 1 M / H h- CO^ Uf f ^ 7 i ' t ^ T - | 5 8 t ; " 7


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    uPD78233 uPD78234 uPD78237 uPD78238 PD78233, 78K/II 78234v PD78234, UPD78233, PD78234) yx 801 yx 801 led yx 801 ic D78233GC 78234 RJLTC PD78233 EV-9900 TRXT 707 PDF

    5L0F

    Abstract: jd-e 94v-0 amphenol MIL-C-55116 u-229/u MIPI spec KL SN 102 94v0 PCB VK 557 M1305 tnr 241 km mil-c-55116
    Text: WPI " Connectors Accessories and Cable Assemblies Table of Contents d-subminiature connectors rear-re!ease & poke home1* 17 ! 117 / 177 f 777 series formerly Amphenol section 1 Blue Ribbon rack & panel ! cable to panel heavy duty connectors 26 series formerly Amphenol


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    PDF

    nec V25 microcontroller

    Abstract: 6634b stm cl-11 PD70330 D70330 PD70320 PD70P322 rf mems switch D70108 ea57
    Text: %ífT 2 _ NEC Electronics Inc. D escrip tio n T h e ¿(PD70330/70332 (V35 is a h ig h-perform ance, 16-bit single-chip m icrocom puter w ith a 16-bit external data bus. T h e //P D 7 0 3 3 0 /7 0 3 3 2 is fu lly softw are com ­ p a tib le w ith /u P D 8 0 86 /8 0 8 8 and ¿/PD70108/70 1 1 6


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    uPD70330 uPD70332 V35TM) 16-bit uPD70330/7 /PD70108/70 V25TM) /PD70330/70332 nec V25 microcontroller 6634b stm cl-11 PD70330 D70330 PD70320 PD70P322 rf mems switch D70108 ea57 PDF