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IXYS Corporation IXFH5N100P INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	IXFH5N100P		23,341			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXFH5N100P		14,355		1	1 - 10 - 100 $6.6 1000 $6.6 10000 $6.6	Buy Now
IXYS Integrated Circuits Division IXFH5N100P MOSFET DIS.5A 1000V N-CH TO247-3 POLAR THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFH5N100P		17,953			1 $5.0798 10 $5.0798 100 $4.618 1000 $4.618 10000 $4.618	Buy Now

IXFH5N100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH5N100		IXYS	HiperFET Power MOSFETS		Scan	PDF

IXFH5N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXFH5N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)	Original	PDF	IXFH5N100
IXFP5N100P Abstract: IXFA5N100P 5N100p Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
dioda by 238 Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching	OCR Scan	PDF	0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
TL 650 ht Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100 Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching	OCR Scan	PDF	4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100