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    IXFH5N100P Price and Stock

    IXYS Corporation IXFH5N100P

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    Chip 1 Exchange IXFH5N100P 23,338
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    New Advantage Corporation IXFH5N100P 14,352 1
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    IXFH5N100P Datasheets Context Search

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    IXFP5N100P

    Abstract: IXFA5N100P 5N100p
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P PDF