Untitled
Abstract: No abstract text available
Text: HiPerRFTM Power MOSFETs VDSS = 1000V ID25 = 21A Ω RDS on ≤ 500mΩ ≤ 250ns trr IXFK21N100F IXFX21N100F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions
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250ns
IXFK21N100F
IXFX21N100F
O-264
338B2
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pf640
Abstract: IXFK21N100F IXFX21N100F PLUS247
Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 Ω RDS on ≤ 500mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions
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Original
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IXFK21N100F
IXFX21N100F
250ns
247TM
00A/s,
338B2
pf640
IXFK21N100F
IXFX21N100F
PLUS247
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PDF
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IXFX21N100F
Abstract: IXFK21N100F PLUS247
Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 Ω RDS on ≤ 500mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions
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Original
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IXFK21N100F
IXFX21N100F
250ns
O-264
338B2
IXFX21N100F
IXFK21N100F
PLUS247
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PDF
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigFH14N100Q
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
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IX6R11S3
Abstract: IX6R11P7
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigTU01N100
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
IX6R11P7
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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IXAN0009
IXAN0009
0009
ixan0009 2
ixan0009 3
TMS320F2407a
GE SCR Manual
mosfet inverter 2kW 100khz
smps 1kW
schematic diagram inverter 500w USING MOSFET
schematic diagram PWM inverter 500w
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U4008
Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXTU01N100
IX6R11S3
IX6R11S6
IX6R11S3
IX6R11S6
U4008
IX6R11P7
IXFK21N100F
18PIN
18-PIN
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IX6R11P7
Abstract: No abstract text available
Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity
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IX6R11
IX6R11
IX6R11S6
IX6R11S3
IX6R11P7
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VCH20
Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXFH14N100Q
IXTU01N100
IX6R11S3
IX6R11S6
IX6R11S3
IX6R11S6
VCH20
IX6R11P7
ixdd414
IXFK21N100F
18PIN
18-PIN
ixys mosfet
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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IXAN0011
Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670
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IXAN0011
100KHz
IXAN0011
0011
resonant smps 500W
smps 500w half bridge
2kw mosfet
smps 500W
half bridge converter 2kw
1kw full bridge converter smps
smps 1kW
DD408
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TO-264 weight
Abstract: No abstract text available
Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038
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OCR Scan
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IXFT60N20F
IXFH12N50F
IXFT12N50F
IXFH21N50F
IXFT21N50F
IXFH28N50F
IXFT28N50F
IXFK44N50F
IXFX44N50F
IXFK55N50F
TO-264 weight
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IXCP10M90S
Abstract: IX6R11S6 18-PIN 10m90s
Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity
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IX6Q11
IX6Q11
IXTU01N100
IX6Q11S3
IX6Q11S6
IXCP10M90S
IX6R11S6
18-PIN
10m90s
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IX6R11S6
Abstract: ix6r11s3
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
Edisonstrasse15
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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Original
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IX6R11
IX6R11
sXFH14N100Q
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
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IX6R11P7
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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Original
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IX6R11
IX6R11
sigTU01N100
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
IX6R11P7
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10M90S
Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity
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IX6R11
IX6R11
IX6R11S6
IX6R11S3
10M90S
IXTH14N60P
IX6R11S3
IX6R11P7
IXFH14N100Q
IXCP
10M90
DSEI12-10A
igbt 500V 22A
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