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IXFL30N120P Price and Stock

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IXYS Corporation IXFL30N120P MOSFET N-CH 1200V 18A I5PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFL30N120P	Tube			25	1 - 10 - 100 $23.5 1000 $23.5 10000 $23.5	Buy Now
Mouser Electronics	IXFL30N120P					1 $36.65 10 $34.11 100 $28.48 1000 $26.57 10000 $26.57	Get Quote

IXFL30N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFL30N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 18A I5-PAK		Original	PDF

IXFL30N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXFL30N120P 300ns 30N120P 9-20-07-B
Untitled Abstract: No abstract text available Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL30N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200	Original	PDF	IXFL30N120P 300ns 30N120P 02-12-10-D
IXFL30N120P Abstract: 1200v18a 30N120P 380m Text: IXFL30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200	Original	PDF	IXFL30N120P 300ns 30N120P 02-12-10-D IXFL30N120P 1200v18a 380m
IXFL30N120P Abstract: 1200v18a 30N120P Text: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200	Original	PDF	IXFL30N120P 300ns 30N120P 4-01-08-C IXFL30N120P 1200v18a 30N120P
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P