IXFN 48N50Q Search Results

IXFN 48N50Q Price and Stock

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IXYS Corporation IXFN48N50Q MOSFET N-CH 500V 48A SOT-227B
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IXFN 48N50Q Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN48N50Q		IXYS	500V HiPerFET power MOSFET Q-class		Original	PDF
IXFN48N50Q		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 48A SOT-227B		Original	PDF

IXFN 48N50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 44N50	Original	44N50Q 48N50Q 44N50 48N50	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A	Original	44N50Q 48N50Q 44N50 48N50 48N50 OT-227 E153432	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50	Original	44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1	PDF
48N50 Abstract: 48N50Q 44N50 Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS on 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	44N50Q 48N50Q 44N50 48N50 OT-227 E153432 48N50 48N50Q 44N50	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
123B16 Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM	Original	44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF