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    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω IXFP4N100QM N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions OVERMOLDED (IXFP.M) OUTLINE


    Original     		PDF IXFP4N100QM 4N100Q

    4N100Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFP4N100QM 4N100Q

    4N100Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions


    Original     		PDF IXFP4N100QM O-220 4N100Q