IXFR20N120P Search Results

IXFR20N120P Price and Stock

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Littelfuse Inc IXFR20N120P MOSFET N-CH 1200V 13A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR20N120P	Tube			300	1 - 10 - 100 - 1000 $19.57913 10000 $19.57913	Buy Now
Newark	IXFR20N120P	Bulk			300	1 - 10 - 100 - 1000 $20.52 10000 $20.52	Buy Now
RS	IXFR20N120P	Bulk		8 Weeks	30	1 - 10 - 100 $30.28 1000 $30.28 10000 $30.28	Get Quote
IXYS Corporation IXFR20N120P MOSFETs 26 Amps 1200V 1 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFR20N120P					1 - 10 - 100 - 1000 $20.22 10000 $20.22	Get Quote
Future Electronics	IXFR20N120P	Tube		26 Weeks	30	1 - 10 - 100 $22.94 1000 $22.94 10000 $22.94	Buy Now
Bristol Electronics	IXFR20N120P		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXFR20N120P	Tube			300	1 - 10 - 100 - 1000 $20.37 10000 $19.97	Buy Now
TME	IXFR20N120P		30		1	1 $33.52 10 $26.58 100 $23.96 1000 $23.96 10000 $23.96	Buy Now
IXYS Integrated Circuits Division IXFR20N120P MOSFET DIS.13A 1200V N-CH ISOPLUS247 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFR20N120P					1 $36.14674 10 $36.14674 100 $33.782 1000 $33.782 10000 $33.782	Get Quote

IXFR20N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR20N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 13A ISOPLUS247		Original	PDF

IXFR20N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFR20N120P Abstract: ISOPLUS247 Text: PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	PDF	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B IXFR20N120P ISOPLUS247
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	PDF	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P