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    IXYS Corporation IXFT23N80Q

    MOSFETs 23 Amps 800V 0.40W Rds
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    IXFT23N80Q Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT23N80Q IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 23A TO-268(D3) Original PDF

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    IXFH23N80Q

    Abstract: transistor N 343 AD
    Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH23N80Q IXFT23N80Q 728B1 123B1 728B1 065B1 IXFH23N80Q transistor N 343 AD

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    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 23 A RDS on = 0.42 Ω trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH23N80Q IXFT23N80Q O-247 O-268 728B1 123B1 728B1 065B1

    to-268

    Abstract: IXFH23N80Q
    Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.40 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH23N80Q IXFT23N80Q O-268 728B1 123B1 728B1 065B1 to-268 IXFH23N80Q