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    IXFX20N120 Search Results

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    IXFX20N120 Price and Stock

    IXYS Corporation IXFX20N120

    MOSFET N-CH 1200V 20A PLUS247-3
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    DigiKey IXFX20N120 Tube 30
    • 1 -
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    • 100 $11.542
    • 1000 $11.542
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    Littelfuse Inc IXFX20N120P

    MOSFET N-CH 1200V 20A PLUS247-3
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    DigiKey IXFX20N120P Tube 1
    • 1 $24.58
    • 10 $24.58
    • 100 $16.97333
    • 1000 $16.97333
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    Newark IXFX20N120P Bulk 300
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    • 1000 $17.79
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    IXYS Corporation IXFX20N120P

    MOSFETs 26 Amps 1200V 1 Rds
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    Mouser Electronics IXFX20N120P
    • 1 $24.99
    • 10 $24.6
    • 100 $17.58
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    Bristol Electronics IXFX20N120P 19
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    TTI IXFX20N120P Tube 300
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    • 1000 $16.97
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    TME IXFX20N120P 1 1
    • 1 $26.16
    • 10 $20.91
    • 100 $19.44
    • 1000 $19.44
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    IXYS Integrated Circuits Division IXFX20N120P

    MOSFET DIS.20A 1200V N-CH PLUS247 HIPERFET THT
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    Ozdisan Elektronik IXFX20N120P
    • 1 $31.33634
    • 10 $31.33634
    • 100 $29.2863
    • 1000 $29.2863
    • 10000 $29.2863
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    IXFX20N120 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX20N120 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFX20N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 20A PLUS247 Original PDF

    IXFX20N120 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK20N120P IXFX20N120P 300ns O-264 PLUS247 20N120P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V


    Original     		PDF IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B

    IXFK20N120P

    Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B IXFK20N120P IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor