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    IXFX250N10P Search Results

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    IXFX250N10P Price and Stock

    Littelfuse Inc IXFX250N10P

    MOSFET N-CH 100V 250A PLUS247-3
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    DigiKey IXFX250N10P Tube 300
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    Newark IXFX250N10P Bulk 300
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    IXYS Corporation IXFX250N10P

    MOSFETs Polar3 HiPerFET Power MOSFET
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    Mouser Electronics IXFX250N10P
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    Future Electronics IXFX250N10P Tube 26 Weeks 30
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    TTI IXFX250N10P Tube 300
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    TME IXFX250N10P 1
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    New Advantage Corporation IXFX250N10P 24 1
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    IXFX250N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX250N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 250A PLUS247 Original PDF

    IXFX250N10P Datasheets Context Search

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    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFK250N10P IXFX250N10P TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		PDF IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P

    IXFK

    Abstract: IXFK250N10P IXFX250N10P PLUS247
    Text: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK250N10P IXFX250N10P O-264 100ms 250N10P IXFK IXFK250N10P IXFX250N10P PLUS247

    IXFK250N10P

    Abstract: IXFX250N10P PLUS247 3jpd
    Text: IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		PDF IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P IXFK250N10P IXFX250N10P PLUS247 3jpd