IXGH30N60A Search Results

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IXYS Corporation IXGH30N60A IGBT 600V 50A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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IXGH30N60A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH30N60A		IXYS	Low VCE(sat) IGBT High speed IGBT		Original	PDF
IXGH30N60A		IXYS	Power MOSIGBTs		Scan	PDF
IXGH30N60AU1		IXYS	High Speed IGBT with Diode		Scan	PDF

IXGH30N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8	Original	PDF	IXGH30N60AU1 Junc-Case620m delay100nÃ time200nÃ time500nÃ
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	PDF	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	PDF	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60
Untitled Abstract: No abstract text available Text: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 \|~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N8 IXGP10N100A IXGH40N60 IXGH40N60A IXGH30N60 IXGH30N60A
IXGH30N50A Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A Text: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time	OCR Scan	PDF	IXGP10N100 IXGP10N100A IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N80A IXGP10N60 1XGP10N60A IXGP10N50 IXGP10N50A IXGH30N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGH20N80 IXGH25N90A
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	PDF	4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60