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    smd diode 819

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C


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    IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819 PDF