IXSH15N120A Search Results

IXSH15N120A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSH15N120A		IXYS	TRANS IGBT CHIP N-CH 1200V 30A 3TO-247 AD		Original	PDF
IXSH15N120AU1		IXYS	TRANS IGBT CHIP N-CH 1200V 30A 3TO-247 AD		Original	PDF

IXSH15N120A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXSH15N120AU1 Abstract: IC-90 Text: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	IXSH15N120AU1 -100A/ D-68619; IXSH15N120AU1 IC-90	PDF
IXSH15N120A Abstract: No abstract text available Text: Preliminary Data Sheet IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V IXSH15N120A IGBT "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM Continuous Transient	Original	IXSH15N120A O-247AD IXSH15N120A	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
SGH80N60RUFD Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild ()	Original	SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120	PDF
50n50c Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data S heet IXSH15N120A IGBT V CES V CE sat "S" Series - Improved SCSOA Capability Symbol Test Conditions v CES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 M£2 1200 V Maximum Ratings Continuous ±20 V T ransient ±30 V ^C25	OCR Scan	IXSH15N120A -247A 1252C,	PDF
Untitled Abstract: No abstract text available Text: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings	OCR Scan	IXSH15N120AU1 125-C, -100A/ 1005C, 125-C D-68619;	PDF
XSH15 Abstract: No abstract text available Text: Prelim inary D a ta s h e e t IXSH15N120A IGBT VCES VCE sat "S" Series - Improved SCSOACapability Sym bol T e s t C o n d itio n s M a x im u m R a tin g s 30 A 1200 V 4.0 V T O -2 4 7 A D 1200 J j = 2 5 °C to 150°C Tj = 2 5 °C to 150°C ; F^E= 1 MO 1200	OCR Scan	IXSH15N120A 1252C, XSH15	PDF
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V	PDF
Untitled Abstract: No abstract text available Text: DIXYS IGBT with Diode IXSH 15N120AU1 IC25 V Short Circuit SOA Capability Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 MO 1200 V v v GEM Continuous Transient U25 U90 ' cm Tc =25°C Tc = 90°C Tc = 25°C, 1 ms	OCR Scan	15N120AU1 O-247AD	PDF