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Littelfuse Inc IXTH10N100D2 MOSFET N-CH 1000V 10A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH10N100D2	Tube	730		1	1 $18.5 10 $18.5 100 $12.21967 1000 $18.5 10000 $18.5	Buy Now
Verical	IXTH10N100D2		120		30	1 - 10 - 100 $9.363 1000 $9.251 10000 $9.251	Buy Now
Arrow Electronics	IXTH10N100D2		120	57 Weeks	30	1 - 10 - 100 $9.363 1000 $9.251 10000 $9.251	Buy Now
Newark	IXTH10N100D2	Bulk	520		1	1 $18.13 10 $15.05 100 $11.97 1000 $11.71 10000 $11.71	Buy Now
Littelfuse Inc IXTH10N100D MOSFET N-CH 1000V 10A TO247
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DigiKey	IXTH10N100D	Tube			300	1 - 10 - 100 - 1000 $14.16973 10000 $14.16973	Buy Now
Newark	IXTH10N100D	Bulk			300	1 - 10 - 100 - 1000 $14.85 10000 $14.85	Buy Now
Ozdisan Elektronik	IXTH10N100D					1 $31.12512 10 $31.12512 100 $29.0889 1000 $29.0889 10000 $29.0889	Get Quote
IXYS Corporation IXTH10N100D2 MOSFETs TO247 1KV 10A N-CH DEPL
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Mouser Electronics	IXTH10N100D2		433			1 $17.6 10 $16.11 100 $12.2 1000 $11.94 10000 $11.94	Buy Now
TTI	IXTH10N100D2	Tube			300	1 - 10 - 100 - 1000 $11.95 10000 $11.95	Buy Now
TME	IXTH10N100D2				1	1 $18.17 10 $14.91 100 $14.43 1000 $13.24 10000 $13.24	Get Quote
New Advantage Corporation	IXTH10N100D2		119		1	1 - 10 - 100 $29.45 1000 $27.49 10000 $27.49	Buy Now
IXYS Corporation IXTH10N100D MOSFETs 10 Amps 1000V 1.4 Rds
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TTI	IXTH10N100D	Tube			300	1 - 10 - 100 - 1000 $14.52 10000 $14.52	Buy Now
IXYS Integrated Circuits Division IXTH10N100D2 MOSFET DIS.10A 1000V N-CH TO-247AD DEPLETION MODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH10N100D2		119			1 $22.08822 10 $22.08822 100 $20.6432 1000 $20.6432 10000 $20.6432	Buy Now

IXTH10N100 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTH10N100	IXYS	1000V HiPerFET power MOSFET	Original	PDF
IXTH10N100	IXYS	MegaMOS Power MOSFETs	Scan	PDF
IXTH10N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IXTH10N100	Unknown	FET Data Book	Scan	PDF
IXTH10N100A	Unknown	FET Data Book	Scan	PDF
IXTH10N100D	IXYS	Three phase full bridge with Trench MOSFETs in DCB isolated high current package	Original	PDF
IXTH10N100D	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A TO-247	Original	PDF
IXTH10N100D2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247	Original	PDF

IXTH10N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTT10N100D Abstract: 10N100 IXTH10N100D siemens relay rg DS99529A Text: Preliminary Technical Information IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B IXTT10N100D 10N100 IXTH10N100D siemens relay rg DS99529A
IXTH10N100D2 Abstract: No abstract text available Text: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2
Untitled Abstract: No abstract text available Text: IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 RDS on = = ≤ 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G S Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSX	Original	PDF	IXTH10N100D IXTT10N100D O-268 O-247) O-268 O-247 IXTT10N100D IXTH10N100D 100ms
T10N100 Abstract: No abstract text available Text: Preliminary Technical Information High Voltage MOSFETs VDSX ID25 IXTH10N100D IXTT10N100D = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B T10N100
Untitled Abstract: No abstract text available Text: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	PDF	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
IXTH20N50D Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.	Original	PDF	IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original	PDF
SSH6N80 Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L	Original	PDF	BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
VN1210N5 Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530 Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10	Original	PDF	RRF120 RRF520 UFN132 IRrj120 RRF522 SFN02802 SFN02812 SFN106A3 YTF520 IRF120 VN1210N5 BR 115N sfn02202 RRF530
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
IRFP260 equivalent Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200	Original	PDF	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent
1RFZ44 Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS	OCR Scan	PDF	Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys

IXTH10N100 Abstract: SFF10N100B Text: £§@11 PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 10 AMP 1000 VOLTS 1.2 Q. N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with polysilicon gate	OCR Scan	PDF	SFF10N100B 670-SSDI IXTH10N100 SFF10N100B
IXTH40N25 Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V BSS m ax. e m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025	OCR Scan	PDF	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent
1XTH5N100 Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10	OCR Scan	PDF	IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	PDF	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
3015 hj Abstract: SK 1117 Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n	OCR Scan	PDF	IXTH/IXTM10 IXTH/IXTM12 10N100 12N100 O-247 O-204 12N100 IXTM12N100 100ps 3015 hj SK 1117
IXTH10N100 Abstract: mosfet to-3 ssdi Text: §£ ll PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) ■ Fax: (714) 522-7424 10 AMP 1000 VOLTS Designer’s Data Sheet 1.2 Q N-CHANNEL POWER MOSFET FEATURES: ■ ■ ■ ■ ■ ■ ■	OCR Scan	PDF	670-SSDI IXTH10N100 mosfet to-3 ssdi
MOSFET 1000 VOLTS Abstract: IXTH10N100 SFF10N100M SFF10N100Z Text: SU PRELIMINARY SFF10N100M SFF10N100Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 10 AMP 1000 VOLTS Designer’s Datasheet 1.2 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate	OCR Scan	PDF	670-SSDI SFF10N100M SFF10N100Z IXTH10N100 O-254 O-254Z MOSFET 1000 VOLTS SFF10N100Z
Untitled Abstract: No abstract text available Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V	OCR Scan	PDF	IXTH/IXTM10 IXTH/IXTM12 10N100 12N100 O-247 O-204 O-247 IXTH10N100
ixth12n100 Abstract: 12n100 3055P Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000	OCR Scan	PDF	10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P
IXTH10N100 Abstract: SFF10N100N SFF10N100P X-125 TO-259 Text: ^ ^ 1 ^ 1 PRELIMINARY SFF10N100N SFF10N100P SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 10 AMP 1000 VOLTS 1.2 0 N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with polysilicon gate	OCR Scan	PDF	670-SSDI SFF10N100N SFF10N100P IXTH10N100 O-258 O-259 2x200 140BSC SFF10N100P X-125 TO-259

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IXTH10N100 Search Results

IXTH10N100 Price and Stock

Littelfuse Inc IXTH10N100D2

Littelfuse Inc IXTH10N100D

IXYS Corporation IXTH10N100D2

IXYS Corporation IXTH10N100D

IXYS Integrated Circuits Division IXTH10N100D2

IXTH10N100 Datasheets (8)

IXTH10N100 Datasheets Context Search

IXTT10N100D

IXTH10N100D2

Untitled

T10N100

Untitled

fqp60n06

IRF540 complementary

IXTH20N50D

IXFd50n20

SSH6N80

VN1210N5

fqp60n06

IRFP260 equivalent

1RFZ44

IXTH10N100

IXTH40N25

1XTH5N100

megamos

3015 hj

IXTH10N100

MOSFET 1000 VOLTS

Untitled

ixth12n100

IXTH10N100