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    IXYS Corporation IXTH182N055T

    MOSFET N-CH 55V 182A TO247
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    IXTH182N055T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH182N055T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 182A TO-247 Original PDF

    IXTH182N055T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    182N055T

    Abstract: T182N IXTH182N055T IXTQ182N055T ixtq182n055 182N055
    Text: Preliminary Technical Information IXTH182N055T IXTQ182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		IXTH182N055T IXTQ182N055T O-247 182N055T 1-06-A 182N055T T182N IXTH182N055T IXTQ182N055T ixtq182n055 182N055 PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		IXTH182N055T IXTQ182N055T O-247 182N055T 1-06-A PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF