Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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OCR Scan
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2x161
2x158
OT-227
2x161-02A
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM
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OCR Scan
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DSEI30
O-247
0-06A
4bflb22b
0003fl7b
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PDF
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806-AS
Abstract: No abstract text available
Text: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode
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Original
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8-06AS
O-220
O-263
20090106a
806-AS
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PDF
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30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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Original
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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ixys dsei 2x30-06c
Abstract: ixys dsei 2x30-05c
Text: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060
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OCR Scan
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4bflb52b
OT-227
2X30-04C
2X30-05C
2X30-06C
2x31-050
2x31-060
D-68619
ixys dsei 2x30-06c
ixys dsei 2x30-05c
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ixys dsei
Abstract: DSEI 806-AS ixys dsei 8 8-06A IXYS
Text: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5
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Original
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8-06AS
O-220
20090106a
ixys dsei
DSEI
806-AS
ixys dsei 8
8-06A IXYS
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PDF
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IXYS DSEI 2
Abstract: 6006A 60-06A
Text: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD C DSEI 60-06A DSEI 60-06AT C A TO-268 AA (AT Type) A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①
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Original
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0-06A
60-06AT
O-247
O-268
IXYS DSEI 2
6006A
60-06A
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PDF
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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OCR Scan
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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PDF
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ixys dsei 2x31-10b
Abstract: No abstract text available
Text: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B
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OCR Scan
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OT-227
2x30-06B
2x30-08B
2x30-10B
2x31-06B
2x31-08B
2x31-10B
D-68619
ixys dsei 2x31-10b
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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Original
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
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PDF
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dsei 31-06c
Abstract: ixys dsei IXYS DSEI 2X E72873 3104c IXYS DSEI 2 3188 diode
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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Original
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
dsei 31-06c
ixys dsei
IXYS DSEI 2X
E72873
3104c
IXYS DSEI 2
3188 diode
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PDF
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ixys dsei 12-10a
Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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Original
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2-10A
O-220
ixys dsei 12-10a
24A12
IXYS 12-10A
diode 6A 1000v
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PDF
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5
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Original
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O-247
0-06A
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PDF
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E72873
Abstract: 30-10B
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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Original
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OT-227
E72873
30-10B
31-10B
E72873
30-10B
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Untitled
Abstract: No abstract text available
Text: DSEI 12-06A IFAV = 14 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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Original
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2-06A
O-220
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DSEI 12 06A
Abstract: IR 1206A IXYS DSEI 12-06A IXYS DSEI 2
Text: DSEI 12-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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Original
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2-06A
O-220
DSEI 12 06A
IR 1206A
IXYS DSEI 12-06A
IXYS DSEI 2
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PDF
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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OCR Scan
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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PDF
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dse*60-06A
Abstract: 60-06A DSEI60-06A DSEI60-06AT
Text: DSEI60-06A DSEI60-06AT Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAV = 60 A VRRM = 600 V trr = 35 ms Type A C TO-247 AD C DSEI 60-06A DSEI 60-06AT A C TO-268 AA (AT Type) A A C A = Anode, C = Cathode IFRMS IFAVM IFRM IFSM I2t
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Original
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DSEI60-06A
DSEI60-06AT
O-247
0-06A
60-06AT
O-268
dse*60-06A
60-06A
DSEI60-06A
DSEI60-06AT
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PDF
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ixys dsei 2x61-06C
Abstract: No abstract text available
Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4
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OCR Scan
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OT-227
2x61-04C
2x61-05C
2x61-06C
D-68619
ixys dsei 2x61-06C
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PDF
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ixys dsei 12-12a
Abstract: 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a
Text: DSEI 12-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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Original
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2-12A
O-220
2-10A
ixys dsei 12-12a
12-12A
ixys dsei 120
1212a
TO-220 1200V 11A
DSEI IXYS
ixys dsei 12
ixys dsei 12-10a
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEI 12-12A IFAV = 11 A VRRM = 1200 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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Original
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2-12A
O-220
2-10A
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEI 12-10A IFAV = 12 A VRRM = 1000 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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Original
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2-10A
O-220
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PDF
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IXYS DSEI 2
Abstract: ixys dsei 2x30
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5
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Original
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30-06P
31-06P
IXYS DSEI 2
ixys dsei 2x30
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PDF
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ixys dsei
Abstract: IXYS DSEI 2 ixys dsei 8 806-AS
Text: DSEI 8 Fast Recovery Epitaxial Diode FRED VRSM V 640 640 VRRM Type C A TO-263 AA DSEI 8-06AS NC V 600 600 A DSEI 8-06A DSEI 8-06AS C (TAB) Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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Original
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O-263
8-06AS
O-220
ixys dsei
IXYS DSEI 2
ixys dsei 8
806-AS
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PDF
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