Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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ixys dsei 2x61
Abstract: 2X61 SMPS 30 IXYS DSEI 2
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 IFAVM = 2x71 A VRRM = 200 V trr = 35 ns Type DSEI 2x 61-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-02P
2x61-02
20080125a
ixys dsei 2x61
2X61
SMPS 30
IXYS DSEI 2
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ixys dsei 2x61
Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-06P
ixys dsei 2x61
dsei 2x60
IXYS DSEI 2
IXYS DSEI 2X
2x61
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DSEI2*61-12
Abstract: dsei 2x60
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
DSEI2x61-12P
DSEI2*61-12
dsei 2x60
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Untitled
Abstract: No abstract text available
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED V 200 VRRM miniBLOC, SOT-227 B E72873 Type V 200 DSEI 2x61-02A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM IFSM
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OT-227
E72873
2x61-02A
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dsei 2x60
Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
dsei 2x60
IXYS DSEI 2X61
IXYS DSEI 2
ixys dsei
IXYS DSEI 2X
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IXYS DSEI 2X121
Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Text: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700
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DO-203
75-08B
75-12B
75-16B
75-18B
IXYS DSEI 2X121
IXYS DSEI 2X121-02a
2x121-02a
IXYS DSEI 2X61
DO-205
2X61-10B
110-12F
dsei 2x60
110-16F
6206 sot 89
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2x61
Abstract: IXYS DSEI 2X61 6112P
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-12P
2x61
IXYS DSEI 2X61
6112P
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Untitled
Abstract: No abstract text available
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-12P
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E72873
Abstract: ixys dsei 61-12b
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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OT-227
E72873
1-02A
E72873
ixys dsei 61-12b
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ixys dsei 12-12
Abstract: ixys dsei 60-06 ixys dsei 60-12 ixys 60-02 DWEP ixys dsei 12-06 IXYS DSEI 2
Text: Fast Recovery Epitaxial Diodes FRED Chips Type TVJM = 150°C VF ¬ @ IF TJ = 25°C V A DWEP 27 - 02 DWEP 37 - 02 DWEP 77 - 02 1.15 1.10 1.20 32 100 125 DWEP 8 - 06 DWEP 12 - 06 DWEP 15 - 06 DWEP 23 - 06 DWEP 25 - 06 DWEP 35 - 06 DWEP 55 - 06 DWEP 75 - 06 1.7
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IXYS DSEI 2x61-06C
Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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OT-227
2x61-04C
2x61-06C
IXYS DSEI 2x61-06C
2x61-06c
ixys dsei 2x61
dsei 2x60
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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OT-227
E72873
1-02A
2x61-02
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ixys dsei 2x61
Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
2x61-10B
ixys dsei 2x61
DSEI 2X61-10B
ixys dsei 2*61-10b
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IXYS DSEI 2X61-12B
Abstract: "SOT-227 B" dimensions 2x61-12B ixys dsei 2x61 2X61
Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM DSEI 2x61 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr miniBLOC, SOT-227 B Type V 1200 DSEI 2x61-12B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
2x61-12B
IXYS DSEI 2X61-12B
"SOT-227 B" dimensions
2x61-12B
ixys dsei 2x61
2X61
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IXYS DSEI 2X121-02a
Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40
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O-252AA
DSEI6-06AS
8-06AS
2-06A
2-10A
2-12A
0-12A
19-06AS
36-06AS
0-06A
IXYS DSEI 2X121-02a
ixys dsei 2x30-12b
DSEI IXYS 2x31-12B
ixys dsei 1x31-06c
IXYS DSEI 2
DSEI 120-06A
1x31-06c
dsei 2x60
IXYS DSEI 2X61-12B
DSEI IXYS 2x31
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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PDF
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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ixys dsei 2x61-06C
Abstract: No abstract text available
Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4
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PDF
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OT-227
2x61-04C
2x61-05C
2x61-06C
D-68619
ixys dsei 2x61-06C
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ixys dsei 2*61-10b
Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Text: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
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4bflb22b
OT-227
2x61-06
2x61-08B
2x61-10B
150nsient
D-68619
ixys dsei 2*61-10b
ATS1000
ixys dsei 12
IXYS DSEI 2X61-06
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IXYS DSEI 2x61-06C
Abstract: 2X61-04C
Text: 1 .7 DSEI 2x 61 Fast Recovery Epitaxial Diode FRED IFAVM V rrm tTr v RS*I V 440 640 Symbol ^FRMS ^FAVH ^FRM ^FSM l2t Vrrm Type V 400 600 DSEI 2X61-04C DSEI 2X61-06C Q I-— 1 >0 1 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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2X61-04C
2X61-06C
OT-227
E72873
IXYS DSEI 2x61-06C
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FR 0169
Abstract: 2X61-06C
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm
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OT-227
2x61-04C
2x61-06C
1490-dip/dt.
1997IXYS
FR 0169
2X61-06C
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5
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OT-227
2x61-10B
1997IXYS
0003flbfl
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Untitled
Abstract: No abstract text available
Text: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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OT-227
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Untitled
Abstract: No abstract text available
Text: □IX YS Fast Recovery Epitaxial Diode FRED V RSM V V’ FIRM DSEI 2x61 V 200 200 1 W.— H' *I n ° 1 - W — *-» Test Conditions ^FRMS ' favm *FRU TVJ —"lyjM Tc = 85°C; rectangular, d = 0.5 tp < 10 jis; rep. rating, pulse width limited by T VJM
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0DQ473Q
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