48N50
Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513
Text: IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 VDSS ID25 RDS on IXFK/FN 44N50 500 V 44 A 0.12 Ω IXFK/FN 48N50 500 V 48 A 0.10 Ω TM HiPerFET Power MOSFET N-Channel Enhancement Mode TO-264 Packages Avalanche Rated, High dv/dt, Low trr (trr ≤ 250) ns
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44N50/50S
48N50/50S
44N50
48N50
44N50
48N50
O-264
SMD-264
TAB 429 H
ixys ixfk 44n50
ixys 44n50
SMD-264
931 diode smd
D-68623
IXFK48N50
smd diode 513
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS Test Conditions TO-264 AA IXFK Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50
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O-264
44N50
48N50
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PDF
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IXFH44N50P
Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM
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44N50P
O-247
IXFH44N50P
03-21-06-B
44n50p
ixfh 44n50p
C4455
IXFK44N50P
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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44N50
48N50
48N50
O-264
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)
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48N50Q
44N50Q
247TM
O-264
44N50
48N50
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PDF
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48N50
Abstract: ixys ixfk 44n50 44N50 IXFK48N50
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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O-264
44N50
48N50
48N50
ixys ixfk 44n50
44N50
IXFK48N50
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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O-264
44N50
48N50
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PDF
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44N50
Abstract: 48N50 48N50Q ixys ixfk 44n50
Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)
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48N50Q
44N50Q
247TM
44N50
48N50
ixys ixfk 44n50
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PDF
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS
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Original
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44N50P
O-247
O-264
IXFH44N50P
03-21-06-B
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PDF
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44n50
Abstract: 44N50P IXFH44N50P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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44N50P
405B2
IXFH44N50P
44n50
44N50P
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48N50Q
Abstract: 44N50 48N50
Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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Original
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247TM
44N50
48N50
728B1
123B1
728B1
065B1
48N50Q
44N50
48N50
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PDF
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48N50Q
Abstract: 44N50 48N50 44N50Q ixfx48n50q
Text: VDSS HiPerFETTM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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Original
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48N50Q
44N50Q
247TM
728B1
48N50Q
44N50Q
44N50
48N50
ixfx48n50q
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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Original
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48N50Q
44N50Q
247TM
44N50
48N50
728B1
123B1
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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Original
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48N50Q
44N50Q
247TM
728B1
123B1
728B1
065B1
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PDF
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|
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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PDF
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44N50F
Abstract: No abstract text available
Text: IXFX 44N50F IXFK 44N50F F-Class: MegaHertz Switching VDSS = 500 V ID25 = 44 A Ω RDS on = 120 mΩ Single MOSFET Die trr ≤ 250 ns HiPerRFTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)
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44N50F
247TM
728B1
44N50F
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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PDF
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VDSS HiPerFET TM Power MOSFETs trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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Original
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48N50Q
44N50Q
247TM
44N50
48N50
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PDF
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48N50
Abstract: 44N50 IXFN SOT227
Text: HiPerFETTM Power MOSFETs V DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous
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Original
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O-264
44N50
48N50
48N50
44N50
IXFN SOT227
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PDF
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ixys ixfk 44n50
Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
Text: ixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns
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OCR Scan
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44N50/50S
48N50/50S
44N50
48N50
48N50
ixys ixfk 44n50
DIODE SMD V05
1J04
5L46
IXFN48N50
IXfk 75 N 50
SMD-264
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PDF
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ot 409
Abstract: SMD-264 K44N50
Text: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A
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OCR Scan
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44N50
48N50
48N50
Cto150
OT-227
E153432
ot 409
SMD-264
K44N50
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PDF
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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OCR Scan
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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PDF
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ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
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OCR Scan
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O-247
O-247
T0-204
O-264
O-264
76N06-11
75N06-12
110N06
76N07-11
76N07-12
ixys ixfn 55n50
170n10
C1106
IXFH26N50
c1124
IXFN170N10
c1120
15N100
76N06
IXFN36n60
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PDF
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