2s901
Abstract: No abstract text available
Text: fetizu <zSE.ml-Condu.etoi Lpiodueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GSTU8030 GSTU8035 GSTU8040 NPN 300, 350, 400V 8 AMP SWITCHING t( — 280ns TYPICAL TO-204AA (TO j)J • High Speed
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GSTU8030
GSTU8035
GSTU8040
280ns
O-204AA
QSTU8030
QSTUB03S
40061X1
2S901nvnl
2s901
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MMBT6520
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol Value Unit C o llector-E m itter Voltage v CEO - 350 Vdc C ollector-Base Voltage v CBO - 350 Vdc Em itter-Base Voltage v EBO - 5 .0 Vdc -250 mA !C - 500 m Adc Symbol Max Unit pd 225 mW 1.8 m W .'C R* j a 556 xw pd 300 mW 2.4 m W '"C
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MMBT6520LT1*
OT-23
O-236AB)
MMBT6520
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Untitled
Abstract: No abstract text available
Text: MWT-0618S-12P2/06182-12P2 i .m ì j itniitfhr irnsii* www.mwtinc.com Email; [email protected] TYPICA L SPECIFICATIONS AT 25 °C • 27.5 dBm P-MB gl • 4,6 IB SMALL SIGNAL GAIN • 15.0 dB INPUT/OUTPUT RETURN LOSS • 350 fflA @ +BY • USES TWO MwT-12HP GaAs FET DEVICES
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MWT-0618S-12P2/06182-12P2
MwT-12HP
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Untitled
Abstract: No abstract text available
Text: MWT-0618S-12P1/06182-12P1 i .m ì j itniitfhr irnsii* www.mwtinc.com Email; [email protected] TYPICA L SPECIFICATIONS AT 25 °C • 27.0 dBm P-ldB • 4,0 IB SMALL SIGNAL GAIN • 15.0 dB INPUT/OUTPUT RETURN LOSS • • 350 fflA @ +8V • USES TWO MwT-12HP GaAs FET DEVICES
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MWT-0618S-12P1/06182-12P1
MwT-12HP
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74HC308
Abstract: s125
Text: MOTOROLA SC b3b72S2 OO^lbaa 350 blE D LOGIC IM0T4 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MC54/74HC30 8 -In p u t NAIMD G ate J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CMOS The MC54/74HC30 is identical in pinout to the LS30. The device inputs are com
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b3b72S2
MC54/74HC30
64ropagation
74HC308
s125
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2N5484
Abstract: No abstract text available
Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current
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2N5484
2N5486*
O-226AA)
b3b7254
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Untitled
Abstract: No abstract text available
Text: Symbol Value Unit Collector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Em itter-Base Voltage Vebo 4.0 Vdc Rating ic 50 m Adc PD 350 2.8 mW m W ,5C TJ- Tstg - 5 5 to +135 3C Symbol Max Unit R&j a 357 CC:W Collector C urrent — C ontinuous
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MPSH24
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Untitled
Abstract: No abstract text available
Text: MPSH81* CASE 29-04, STYLE 2 TO-92 TO-226AA MAXIMUM RATINGS ¡Symbol Value Unit Co llecto r-Em itter Voltage Rating VcEO -2 0 Vdc C o llecto r-Base Voltage VCBO -20 Vdc Em itter-Base Voltage v EBO - 3 .0 Vdc ,PD 350 2.81 mW m W *C T j- ^stg - 5 5 to +150
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MPSH81*
O-226AA)
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MPSH07
Abstract: M200MH MPS-H07
Text: MOTOROLA SC XSTRS/R F 12E 0 | 131,725. OOâtlSS 1 | M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 30 Vdc Coliector*Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Pd 350 2.81 mW mW/°C T j. TS g - 5 5 to +150 Symbol Max U nit
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MPSH07
100-MHz
200-M
MPSH07
M200MH
MPS-H07
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150
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BS107
BS107A
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J305
Abstract: J304 SJ304 JFET HIGH FREQUENCY
Text: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation
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O-226AA)
2N5484
J305
J304
SJ304
JFET HIGH FREQUENCY
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AX357
Abstract: No abstract text available
Text: Sym bol Value Unit Collector-Emitter Voltage v CEO 15 Vdc Coliector-Base Voltage V cB O 20 Vdc Emitter-Base Voltage v EBO 3.0 Vdc Pd 350 2.81 mW m W /T TJ ' Tstg - 55 to -t-150 °C Sym bol M ax Unit R« j a 357 °CW Rating Total Device Dissip ation id T a = 25°C
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-t-150
AX357
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Untitled
Abstract: No abstract text available
Text: Symbol Value Unit Collector-Em itter V oltage Rating v CEO - 20 V dc C ollector-Base V oltage v CBO - 20 V dc Vebo -3 .0 V dc PD 350 2.81 mW mW/°C T J. T stg - 55 to + 1 5 0 °C Symbol Max Unit 357 °C/W Em itter-Base V oltage Total Device D issip ation <v T/\ = 25°C
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MPSH81
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MP2004C
Abstract: MP2004CG
Text: MICRO POWER SYSTEMS INC □! M I>E~| t,m7 MM4 ODDS^SB 7 ^ p ow er T - 7 ^ '2 5 3 5 0 M H z F E T B u ffe r SYSTEMS MP2004/2004C FEATURES SIMPLIFIED SCHEMATIC • Slew Rate — 2500 V / / j s • Rise Time — 1 ns • • • • • • Bandwidth — 350 MHz
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MP2004/2004C
ELH0033
MIL-STD-883B
MP2004
P7684
MP2004CG
MP2004G
MP2004C
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value U n it D ra in -G a te V o lta g e V DG -3 5 Vdc G a te -S o u rc e V o lta g e V GS -3 5 Vdc 'G 50 mA PD 350 2.8 mW m W :5C Tl 300 ’C T j . Tgtg - 65 to + 1 5 0 3C R a tin g G ate C u rre n t T o ta l D e vice D is s ip a tio n
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EL2004G/883B
Abstract: el2m EL2004CG EL2004G EL2004L fet amplifier schematic MDP0002
Text: ELANTEC 2AE D INC HIGHPEBfOHMANCEAMAUiGISTEBRWEDCIHCUlTS a i a ^ S S ? OOOQTMtj 7 EL2004/EL2004C - 350 MHZ FET BllffCV ~ T ~ ~' ^ *7 3 5 ~ F eatu res G eneral D escrip tion • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver
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EL2004/EL2004C
ELH0033â
MIL-STD-883B
EL2004CG
MDP0002
EL2004G
EL2MHG/883B
EL2004
EL2004G/883B
el2m
EL2004CG
EL2004L
fet amplifier schematic
MDP0002
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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EL200
Abstract: EL2004
Text: la n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2004/EL2004C 350 MHz FET Buffer F eatu res G eneral D escrip tion • • • • • • • T he EL2004 is a very high-speed, F E T in p u t b u ffer/lin e driver designed for u n ity gain applications a t b o th h igh cu rren t up to
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EL2004/EL2004C
EL2004
M2004
200mA
200nSbr
100mA
EL200
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1RF330
Abstract: No abstract text available
Text: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 | 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high
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t3fci72SM
IRF330
IRF331
IRF333
IRF330,
IRF333
1RF330,
1RF330
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IRF730
Abstract: IRF732 mtm5n35 GR 733
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF730 IRF731 IRF732 IRF733 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T h e se T M O S P o w e r FETs are d es igne d fo r high v o lta g e , high speed p o w e r sw itch in g ap p lication s
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IRF730
IRF731
IRF732
IRF733
IBF731
mtm5n35
GR 733
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Untitled
Abstract: No abstract text available
Text: HGH PERFORMANCEanalog integrated circuits EL2004/EL2004C 350 MHz FET Buffer F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver designed for unity gain applications a t both high current up to
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EL2004/EL2004C
EL2004
M2004
200mA
200nS
100mA
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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TL08 015
Abstract: C14A 2SK277 2SK278 T108 T460
Text: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *
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2SK277
278fi,
Cycled50
TL08 015
C14A
2SK278
T108
T460
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2SK259
Abstract: 2SK260 HITACHI 2SK* TO-3 t7y25
Text: blE D MM'JbHQS 0013Ü22 bT? • H I T M HITACHI/ OPTOELE CTR ONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Con
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2SK259Â
2SK260Â
2SK259
2SK260
HITACHI 2SK* TO-3
t7y25
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