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    J 6 SMD TRANSISTOR Search Results

    J 6 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    J 6 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03 PDF

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08 PDF

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08 PDF

    4N06L04

    Abstract: IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804
    Text: IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L04 IPI90N06S4L-04 4N06L04 IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804 PDF

    4N06L07

    Abstract: smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809
    Text: IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 6.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L07 IPI80N06S4L-07 4N06L07 smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809 PDF

    ANPS071E

    Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03 PDF

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04 PDF

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l PDF

    4N06L05

    Abstract: DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode
    Text: IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L05 IPI80N06S4L-05 4N06L05 DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode PDF

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI50N10S3L-16 PG-TO263-3-2 3N10L16 DIODE smd marking v1 smd diode 949 PDF

    3N10L12

    Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L12 IPI70N10S3L-12 3N10L12 IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L PDF

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140 PDF

    4n04l04

    Abstract: IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L04 IPI80N04S4L-04 4n04l04 IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04 PDF

    4N04L04

    Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N04S4L-04 PG-TO263-3-2 4N04L04 DIODE smd marking Ag IPP80N04S4L-04 m9120 4N04 SMD DIODE 681 PDF

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03 PDF

    4N04L08

    Abstract: DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q
    Text: IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 7.6 mΩ ID 45 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L08 IPI45N04S4L-08 4N04L08 DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q PDF

    4P04L06

    Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
    Text: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-06 4P04L06 smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag PDF

    3N10L16

    Abstract: 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L16 IPI50N10S3L-16 3N10L16 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1 PDF

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode PDF

    SMD-2520

    Abstract: 3N10L smd diode 104
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104 PDF

    4N03L04

    Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03 PDF

    4N03L04

    Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2 PDF

    4N0406

    Abstract: IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2
    Text: IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0406 IPI70N04S4-06 4N0406 IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2 PDF