Untitled
Abstract: No abstract text available
Text: bbS3*J31 0015515 “=! ObE D N AMER PHILIPS/DISCRETE BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 variant, especially suitable for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.
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BC846
BC847
BC848
OT-23
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Untitled
Abstract: No abstract text available
Text: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications
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BCX19
BCX20
OT-23
BCX17and
BCX18
0D54b04
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BUK456
Abstract: C055 T0220AB 7ts transistor
Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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003Qb6S
BUK456-200A/B
T0220AB
BUK456
-200A
-200B
C055
7ts transistor
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E » • bb53*J31 0030363 bS3 Philips Components BGY113A/113B Datasheet status P r e lim in a r y s p e c ific a tio n date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in
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BGY113A/113B
OT288D
00302fl5
OT288D.
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ferrite beat
Abstract: ferrite 4312 Scans-004952 MLAP GG267
Text: N AMER PHILIPS/DISCRETE b 'ìE bb53=J31 0 Q 2 6 7 6 S D G 7T * A P X BLT93/SL A UHF POWER TRANSISTOR NPN silicon planar epitaxial tran sisto r p rim a rily intended fo r use in hand-held radio stations in the 90 0 M Hz co m m u n ica tio n s band. T his device has been designed sp e cifica lly fo r class-B operation.
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GG267Ã
BLT93/SL
OT122D)
ferrite beat
ferrite 4312
Scans-004952
MLAP
GG267
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J334 transistor
Abstract: j327 j350 1t4t transistor j349 transistor J333 j327 transistor j350 TRANSISTOR transistor j326 j329
Text: Flat Panel Interlace Examples Flat Panel Interface Examples This section includes schematic examples showing how to connect the 65525 to various flat panel displays. Monochrome Panels 1 2) 3) 4) 5) Mfr Part Number Epson Citizen Sharp Sanyo Hitachi EG-9005F-LS
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EG-9005F-LS
G6481L-FF
LM64P80
LCM-6494-24NAC
LMG5162XUFC
LJ64ZU50
640x480
J334 transistor
j327
j350
1t4t
transistor j349
transistor J333
j327 transistor
j350 TRANSISTOR
transistor j326
j329
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J32C
Abstract: J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c MJD32 J31C MARKING
Text: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1
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Original
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MJD31
MJD31C
MJD32
MJD32C
O-252
MJD32
J32C
J31C
J31C TO-252
smd j31c
J31C ON
J31C smd
j32-C
smd j32c
J31C MARKING
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Untitled
Abstract: No abstract text available
Text: ObE D N AMER PHILIPS/DISCRETE bbSS^l ODlM^a? S • LBE2005Q LCE2005Q MAINTENANCE TYPE for new design use LBE/LCE2003S J T - S i r 05" MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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LBE2005Q
LCE2005Q
LBE/LCE2003S)
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LBE2005Q
Abstract: LCE2005Q J31 transistor
Text: N AMER PHILIPS/DISCRETE ObE D • 1^53=131 □DIM'IS? S ■ M A IN T E N A N C E TYPE LBE2005Q LCE2005Q I for new design use LBE/LCE2003S T-32r05" . MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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LBE/LCE2003S)
LBE2005Q
LCE2005Q
LCE2005Q
J31 transistor
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Untitled
Abstract: No abstract text available
Text: £=J S G S -T H O M S O N A T /. M»i[LBCT@l[] S_MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • RUGGEDIZED VSWR 20:1 . INTERNAL INPUT/OUTPUT MATCHING B LOW THERMAL RESISTANCE . METAL/CERAMIC HERMETIC PACKAGE
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MSC81350M
MSC81350M
7T2T237
JH3214F
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BQX54
Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
Text: • bhS3^31 0024tD'ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages
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G024tD"
BCX54
BCX55
BCX56
BCX51,
BCX52
BCX53
BCX55
BQX54
BCX56
BCX54
71A marking
BCX51
BCX54-10
BCX54-16
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L7E transistor
Abstract: BF820 BF821 BF822 BF823
Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N
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BF821
BF823
BF820,
BF822
BF821
L7E transistor
BF820
BF823
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PDF
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Untitled
Abstract: No abstract text available
Text: • bb53T31 D0555Qb MTD H A P X N AUER PHILIPS/DISCRETE BSP120 b7E » N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and
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bb53T31
D0555Qb
BSP120
OT223
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Untitled
Abstract: No abstract text available
Text: • bbS3c13]i QQ245bl 4Tb H A P X N AUER PH ILIPS/DISCR ETE BCW29 BCW30 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
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QQ245bl
BCW29
BCW30
bb53131
00545b4
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Untitled
Abstract: No abstract text available
Text: BSP126 JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SO T223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.
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BSP126
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BDT95
Abstract: No abstract text available
Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.
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BDT91
BDT93
BDT95
BDT92,
BDT94
BDT96.
DBDT93
BDT95
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TIP-33
Abstract: T1P33 TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C
Text: Jv TIP33; A; B; C _ SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are
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TIP33;
OT-93
TIP34,
TIP34A,
TIP34B
TIP34C.
TIP33
bbS3131
TIP-33
T1P33
TIP33A
TIP33B
TIP33C
TIP34
TIP34A
TIP34C
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sot440
Abstract: MLC092
Text: Philips Semiconductors Product specification . NPN microwave power transistors FEATURES PTB32001X; PTB32003X; ’ _ ’ PTB32005X PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT440A
PTB32001X;
PTB32003X;
rTB32005X
PTB32003X.
PTB32005X
sot440
MLC092
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Untitled
Abstract: No abstract text available
Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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001S1DS
bhS3T31
PTB32001X
PTB32003X
PTB32005X
PTB32001X.
r-33-07
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl 00E4S43 460 ■ A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B: 61C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.
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00E4S43
BCV61;
BCV61B:
OT-143
BCV62.
BCV61B
BCV61A
BCV61B;
BCV61
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PDF
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907 TRANSISTOR smd
Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in
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BFQ149
MSB013
907 TRANSISTOR smd
smd transistor 547
smd transistor code 314
703 TRANSISTOR smd
TRANSISTOR SMd jg data
T3D 97
SMD CODE SOT89 lc
T3D 63
BFQ149
transistor smd pnp 526
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Untitled
Abstract: No abstract text available
Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.
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BD934F;
BD936F
BD938F;
BO940F
BD942F
S0T186
BD933F,
BD935F,
BD937F,
BD939F
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PDF
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bd679
Abstract: No abstract text available
Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA
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BD675;
BD679;
OT-32
BD676,
BD678,
BD680,
BD682
BD684.
BD675
bd679
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D434
Abstract: BD43b 440 transistors
Text: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n Silicon epitaxial-base transistors DESCRIPTION QUICK REFERENCE DATA PNP transistors in a TO-126 SOT32 plastic envelope, intended for use in complementary output stages of audio amplifiers up to
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O-126
BD433,
BD435,
BD437,
BD439
BD441
BD434/436/438/440/442
BD434
BD436
D434
BD43b
440 transistors
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