V06T
Abstract: FZ600R12KP4
Text: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0 !
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FZ600R12KP4
V06T
FZ600R12KP4
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J3j DIODE ST
Abstract: FZ900R12KE4 dz 300
Text: Technische Information / technical information FZ900R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0
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FZ900R12KE4
J3j DIODE ST
FZ900R12KE4
dz 300
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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1660nm
Abstract: X10679E
Text: DATA SHEET LASER DIODE N D L 7 5 8 1 P InGaAsP STRAINED DC PBH PULSED LASER DIODE MODULE 1650 nm OTDR APPLICATION DESCRIPTION NDL7581P is a 1650 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with singlemode fiber and internal thermoelectric cooler.
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NDL7581P
NDL7S81P
LEI-1201
IEI-1209
C10535E
MEI-1202
X10679E
b4275E5
1660nm
X10679E
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bot63
Abstract: BDT62 BDT62A BDT62B BDT62C BDT63 BDT63B
Text: BDT63; 63A BDT63B; 63C y v _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; T0-220 plastic envelope. P-N-P complements are BDT62,
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BDT63;
BDT63B;
T0-220
BDT62,
BDT62A;
BDT62B
BDT62C.
BDT63
T0-220.
bot63
BDT62
BDT62A
BDT62C
BDT63B
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photo darlington sensor
Abstract: reflective photo sensor PCB PHOTO SENSOR PHOTO TRANSISTOR current to voltage waitrony
Text: Waitrony Photo Reflective Sensor Module No.: RS-D4A 1. General Description Dimensions Unit: mm The RS-D4A reflective sensor combines a GaAs infrared light emitting diode with a high sensitivity photo darlington transistor in a super mini (04m m ) ceramic
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BUK457-400B
Abstract: T0220AB
Text: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711052b
BUK457-400B
T0220AB
BUK457-400B
T0220AB
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IC-3368
Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
Text: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,
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uPA1600
IC-3368
smd transistor 9j
UPA1600GS
iso 1207
PA-1600
20PIN
MIL GRADE TRANSISTOR ARRAY
PA1600
SMD transistor 6J U
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MARKING 358 945A
Abstract: colour code diode zener MARKING 945A zener color codes Zener diode wz 140 colour code zener Zener diode wz 130 MARKING 2S SMA 927a A 928A
Text: TAIWAN SEMICONDUCTOR % 1S M A 5926 - 1S M A 5956 1.5 Watts Surface Mount Silicon Zener Diode SM A/DO-21 AAC tò RoHS C O M P L IA N C E F e a tu re s III*[f KM IK^-' l!Ki F o r su rfa ce m o u n te d a p p lic a tio n s in o rd e r to o p tim iz e b o a rd space
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SMA5926
SMA5956
SMA/DO-214AC
MARKING 358 945A
colour code diode zener
MARKING 945A
zener color codes
Zener diode wz 140
colour code zener
Zener diode wz 130
MARKING 2S SMA
927a
A 928A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 7aabthoo 899 9-bit dual latch transceiver with 8-bit parity generator/checker 3-State FEATURES DESCRIPTION • Symmetrical (A and B bus functions are identical) The 74ABT899 is a 9-bit to 9-bit parity transceiver with separate
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A/-32mA
500mA
74ABT899
74ABT
500ns
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Untitled
Abstract: No abstract text available
Text: P54/74FCT399/A P54/74PCT399/A FAST QUAD DUAL-PORT REGISTER FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic ■ FCT-A speed at 7.0ns max. (Com'l) FCT speed at 10.0ns max. (Com'l) ■ ■ ESD protection exceeds 2000V Inputs and Outputs Interface Directly with TTL,
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P54/74FCT399/A
P54/74PCT399/A)
FCT399
MIL-STD-883,
AE1826-4
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DSC 2921
Abstract: 74FCT16651T
Text: S R 'n FAST CMOS 16-BIT IDT54/74FCT16651 T/AT/CT/ET INVERTING BUS TRANSCEIVER/REGISTER Jdt In te g ra te d D evice T echnology, Inc. FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tS K o ) (Output Skew) < 250ps
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16-BIT
IDT54/74FCT16651
250ps
-32mA
MIL-STD-883,
200pF,
IDT54T
IDT54/74FCT16651T/AT/CT/ET
DSC 2921
74FCT16651T
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diode S455
Abstract: PTH451C diode smd LDB 107 VARISTOR NTC 10 D 208 MHF 318 FLYBACK RS360 pv34 PTH451 XMF S3 POT21
Text: Alphabetic Product Name Index A Acceleration S e n s o rs . AC Line F ilters . Active F ilters. Adjustm ent P otentiom eters. A n te n n a s .
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Untitled
Abstract: No abstract text available
Text: Low Cost, Low Power Instrumentation Amplifier AD620 ANALOG DEVICES FEATURES EASY TO USE Gain Set with One External Resistor Gain Range 1 to 1000} Wide Power Supply Range (±2.3 V to ±18 V Higher Performance than Three Op Amp IA Designs Available in 8-Pin DIP and SOIC Packaging
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AD620
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