ddr dimm pinout
Abstract: L1238 socket am3 pinout j8510 fairchild aa11 MDIO clause 22 J124 J68 10A intel D915 xcvr
Text: Stratix GX Development Board Data Sheet August 2003, ver. 1.1 Designers can use the Stratix GX Development Board to prototype and develop high-speed applications for StratixTM GX and StratixTM FPGAs. Use of this board can shorten the time to market for applicable designs.
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RS-232,
ddr dimm pinout
L1238
socket am3 pinout
j8510
fairchild aa11
MDIO clause 22
J124
J68 10A
intel D915
xcvr
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1510nm laser diode
Abstract: No abstract text available
Text: Data Sheet 2.5Gb/s Buried Het Laser non-WDM applications LC25WZ This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in 2.5Gb/s long distance single channel optical fiber systems. The device is packaged in a
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LC25WZ
14-pin
175km
1510nm
TL9000
ISO9001
FM15040
ISO14001
EMS35100
BH13091
1510nm laser diode
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LC25W
Abstract: LC25WZB 1510nm laser diode LC25Wz GR-468-CORE LC25WZCA-J28 laser diode submount
Text: Data Sheet 2.5Gb/s Buried Het Laser non-WDM applications LC25WZ This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in 2.5Gb/s long distance single channel optical fiber systems. The device is packaged in a
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LC25WZ
14-pin
175km
1510nm
ISO14001
TL9000
ISO9001
FM15040
BH13091
LC25W
LC25WZB
1510nm laser diode
LC25Wz
GR-468-CORE
LC25WZCA-J28
laser diode submount
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CMB2114
Abstract: MMC2114 presse machine
Text: MMCCMB2114UM/D MMCCMB2114 Controller and Memory Board User’s Manual Important Notice to Users While every effort has been made to ensure the accuracy of all information in this document, Motorola assumes no liability to any party for any loss or damage caused by errors or omissions or by statements of any kind in this
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MMCCMB2114UM/D
MMCCMB2114
CMB2114
MMC2114
presse machine
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j73 diode
Abstract: wp-35 J57 diode MSA0651 J63-J65 p87 diode J69 DIODE PORT80 p82 diode A11P
Text: C1 VCC 0.1uF C2 0.1uF IC1 J1 14 64 VCC CON2 J3 1 2 3 4 96 Vcc AVss AVcc AVref 16 J2 62 99 J4 98 J6 J7 J8 J10 38 37 36 RxD Port_80 Port_81 GND RESET CNVss TxD Vcc Vss J5 4pin CON3 Vss VCC 1 2 3 4 5 6 7 8 9 10 J13 35 J15 34 J17 33 J19 32 J21 31 P60/CTS0/RTS0
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P60/CTS0/RTS0
P61/CLK0
P20/A0
P21/A1
P62/RxD0
P22/A2
P63/TxD0
P23/A3
P64/CTS1/RTS1/CTS0/CLKS1
P24/A4
j73 diode
wp-35
J57 diode
MSA0651
J63-J65
p87 diode
J69 DIODE
PORT80
p82 diode
A11P
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CON32A
Abstract: omron optocoupler M109 sensor 100n J63 omron C20 plc a20 Schottky diode st max RS485 regulator 59 94C66 IN34 diode
Text: UM0162 USER MANUAL Getting Started with the CAN Industrial Controller Evaluation Board using an ST10 MCU Introduction This user manual describes the implementation of Controller Area Network CAN Industrial Controller (IC) applications based on a 16-bit microcontroller from STMicroelectronics’ ST10 family. ST10
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UM0162
16-bit
CANIC10
RS232
CON32A
omron optocoupler
M109 sensor
100n J63
omron C20 plc
a20 Schottky diode st
max RS485
regulator 59
94C66
IN34 diode
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EDFA Series optical preamplifier
Abstract: edfa amplifier 30dB FC CONNECTOR 0,5 pitch 40 pin SD 280 samtec zltmm DIODE BFM edfa booster "electrical connector"
Text: Data Sheet MiNi Block Optical Amplifier Compact EDFA Series MB* The MiNi block optical amplifier series offers compact, economical amplification for a variety of applications. Available optimised as a preamp or booster amplifier, this gainblock family can be used for single channel, narrowband
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17dBm
ISO14001
TL9000
ISO9001
FM15040
BH12886
EDFA Series optical preamplifier
edfa amplifier 30dB
FC CONNECTOR 0,5 pitch 40 pin
SD 280
samtec zltmm
DIODE BFM
edfa booster
"electrical connector"
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TDK capacitors 2.2uF 0201
Abstract: NFM41PC204F1H3B j526 16500C J529 0201 footprint C1608X7R1H104K MAX19586 MAX19586EVKIT MAX19588
Text: 19-4015; Rev 1; 12/06 MAX19586/MAX19588 Evaluation Kits The MAX19586/MAX19588 evaluation kits EV kits are fully assembled and tested PCBs that contain all the components necessary to evaluate the performance of the MAX19586 and MAX19588. The MAX19586 is a
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MAX19586/MAX19588
MAX19586
MAX19588.
16-bit,
80Msps
MAX19588
100Msps
TDK capacitors 2.2uF 0201
NFM41PC204F1H3B
j526
16500C
J529
0201 footprint
C1608X7R1H104K
MAX19586EVKIT
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MC9S12ZVMC12
Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
Text: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor
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MC9S12ZVM128MCBUG
S12ZVM12EVB
S12ZVMx12EVB
S12ZVM,
16-bit
MC9S12ZVMC12
resolver sensor
S12ZVML12EVBQSG
MC9S12ZVM
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Untitled
Abstract: No abstract text available
Text: Data Sheet MiNi Block Optical Amplifier - Compact EDFA Series MB* The MiNi block optical amplifier series offers compact, economical amplification for a variety of applications. Available optimised as a preamp or booster amplifier, this gainblock family can be used for single channel, narrowband
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17dBm
TL9000
ISO9001
FM15040
ISO4001
EMS35100
BH12886
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21CFR1040
Abstract: LP 1610 IEC60825-1 LC25WC 80km
Text: Data Sheet 2.5 Gb/s CWDM Buried Het Laser 80Km reach LC25WC This laser module provides a fast route to CWDM by providing a drop in replacement on existing TDM or WDM circuit packs with minimum redesign and verification work. The product employs the Bookham strained layer MQW Buried
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LC25WC
14-pin
1466nm
ISO14001
TL9000
ISO9001
FM15040
BH13095
21CFR1040
LP 1610
IEC60825-1
LC25WC
80km
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smd schottky diode A2 SOD-123
Abstract: CAP 10u 10 25V X7R 1206 smd diode A2 smd schottky diode 82 smd resistance R39 smd 805 SMD1808-A1 J31 sod-123 1uF 250V 10 X7R SMD electrolytic suppressor diode smd
Text: DP83848 AspenPhy Demo II - Cover Revised: Wednesday, August 11, 2005 870012505-100 Revision: A2 Bill Of Materials Page1 Item 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 49
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DP83848
CRCW0805
CRCW2010
smd schottky diode A2 SOD-123
CAP 10u 10 25V X7R 1206
smd diode A2
smd schottky diode 82
smd resistance R39
smd 805
SMD1808-A1
J31 sod-123
1uF 250V 10 X7R SMD electrolytic
suppressor diode smd
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Untitled
Abstract: No abstract text available
Text: Data Sheet 2.5 Gb/s CWDM Buried Het Laser 80Km reach LC25WC This laser module provides a fast route to CWDM by providing a drop in replacement on existing TDM or WDM circuit packs with minimum redesign and verification work. The product employs the Bookham strained layer MQW Buried
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LC25WC
14-pin
1466nm
BH13095
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vibration Energy Harvester
Abstract: MEC120 D-MPM101 MEC101 Piezoelectric Energy Harvester MEC 1000 D-MPM101-20 02SR-3S D-MPM101-7A
Text: INFINERGY D-MPM101 Development Micro Power Module Integrated Solid-State Micro-Power Storage Module DS004 v1.1 October 2009 Preliminary Product Data Sheet Features • • • • • • Integrated Energy Storage and Management Unit 25.4 mm x 26.7 mm 1.00 in x 1.05 in x 4 mm Thick
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D-MPM101
DS004
MEC101
vibration Energy Harvester
MEC120
Piezoelectric Energy Harvester
MEC 1000
D-MPM101-20
02SR-3S
D-MPM101-7A
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bookham tunable LASER
Abstract: No abstract text available
Text: BH13170_LC25ET 1/12/06 12:59 Page 1 Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with Etalon Stabilisation and extended reach option LC25ET This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been
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BH13170
LC25ET
4x100GHz
14-pin
1510nm
bookham tunable LASER
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dfb activation energy
Abstract: TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11
Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
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10Gb/s
EML10ZCA
EML10
STM-64/OC-192
953Gb/s,
21CFR
ISO14001
TL9000
ISO9001
dfb activation energy
TR-NWT-000870
bookham modulator
10Gb CDR
DFB laser drivers
86106B
energy absorption of diode
nrz optical modulator
EML10ZCA
EML11
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
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10Gb/s
EML10ZCA
EML10
STM-64/OC-192
953Gb/s,
TL9000
ISO9001
FM15040
ISO14001
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dfb activation energy
Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
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10Gb/s
EML10WCB
EML10WCB
STM-64/OC-192
100GHz
953Gb/s,
EML10
21CFR
ISO14001
TL9000
dfb activation energy
10Gb CDR
5252 S
diode 5817 specifications
TR-NWT-000870
AN0140
EML11
GR-468
Diode BFM
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GB 4056 D
Abstract: No abstract text available
Text: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option LC25T This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed
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4x100GHz
LC25T
14-pin
1510nm
BH13089
GB 4056 D
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LC25W-A
Abstract: bookham lc25 1996 direct pm modulation circuit LC25 LC25W LC25EW bookham dr1670
Text: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division
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175km
LC25W-A
175km)
14-pin
1510nm
ISO14001
TL9000
ISO9001
FM15040
BH13088
LC25W-A
bookham lc25 1996
direct pm modulation circuit
LC25
LC25W
LC25EW
bookham dr1670
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Untitled
Abstract: No abstract text available
Text: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division
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175km
LC25W-A
175km)
14-pin
1510nm
BH13088
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bookham dr1670
Abstract: No abstract text available
Text: Data Sheet 2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization LC25W-B 360km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division
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360km
LC25W-B
360km)
14-pin
1510nm
BH13087
bookham dr1670
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laser chirp parameter
Abstract: 2 Wavelength Laser Diode DFB wavelength locker LC25W-B etalon locker LC25 LC25W laser "chirp parameter" DR1670 LC25EW
Text: Data Sheet 2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization LC25W-B 360km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division
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360km
LC25W-B
360km)
14-pin
1510nm
ISO14001
TL9000
ISO9001
FM15040
BH13087
laser chirp parameter
2 Wavelength Laser Diode
DFB wavelength locker
LC25W-B
etalon locker
LC25
LC25W
laser "chirp parameter"
DR1670
LC25EW
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TSIP520
Abstract: TSIP5200 TSIP520I
Text: TSIP520. Temic Semiconductors GaAs/GaAlAs IR Emitting Diodes in 0 5mm Package Description TSIP52.-series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol
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TSIP520.
TSIP52.
16-Oct-%
16-Oct-96
TSIP520
TSIP520
TSIP5200
TSIP520I
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