Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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XYLENE
Abstract: LR26550 Matsushita Relay Technical Information, nr smd rectifier bridge 1.5A 4328A dc welding machine schematic pcb diagram
Text: JA 1 HORSE-POWER COMPACT POWER RELAYS 30.1 1.185 30.1 1.185 34.7 1.366 TMP type UL File No.: E43028 CSA File No.: LR26550 34.7 1.366 28.5 1.122 JA-RELAYS 28.5 1.122 TM type mm inch • High switching capacity — 55 A inrush, 15 A steady state inductive load 1 Form A
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E43028
LR26550
XYLENE
LR26550
Matsushita Relay Technical Information, nr
smd rectifier bridge 1.5A
4328A
dc welding machine schematic pcb diagram
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a/TO111
Abstract: No abstract text available
Text: Microsemi NPN Transistors Part N um ber JA N S2N3997 JA N S2N3998 JA N S2N3999 JA N TX2N 2880 JA N TX2N 3749 JA N TX2N 3996 JA N TX2N 3997 JAN TX2N 3998 JAN TX2N 3999 JA N TXV2N 2880 JA N TXV2N 3749 JA N TXV2N 3996 JA N TXV2N 3997 JA N TXV2N 3998 JA N TXV2N 3999
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NPN-13
a/TO111
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The 8002 Amplifier IC
Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767
Text: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS
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2N3740*
2N3741*
2N3741A
2N3740,
2N3766
2N3740)
2N3767
2N3741)
2N3741
The 8002 Amplifier IC
8002 Amplifier IC
t4 and 0570
2N3741
New England Semiconductor 2n3741
IC 8002
2N3740
2N3766
2N3741A
2N3767
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0718A
Abstract: HS4401 JANTX2N2920 2N0718 19835
Text: Microsemi NPN Transistors Part N um ber M icrosem i Division Watertown Watertown Watertown Watertown JA N 2N0910 Watertown JAN 2N 0910S Watertown JAN2N0911 Watertown JAN 2N 0911S Watertown JA N 2N0912 Watertown JAN 2N 0912S Watertown JA N TX2N 0910 Watertown
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2N0910
2N911
2N912
0910S
JAN2N0911
0911S
2N0912
0912S
0718A
HS4401
JANTX2N2920
2N0718
19835
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2N6287 JANTX
Abstract: 2N6282 amplifier transistor 2N6284 2N6283 2N6284 2N6285 2N6286 2N6287 2N6282 NEW ENGLAND SEMICONDUCTOR 2N62B
Text: NPN PNP 2N6282 2N6285* 2N6283* 2N6286* 2N6284* 2N6287* *also a v a ila b le as JA N , JA N T X , JA N T X V DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose am plifier and low frequency switching applications. Collector-Em itter Sustaining Voltage —
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2N6282
2N6285*
2N6283*
2N6286*
2N6284*
2N6287*
2N6282,
2N6285
2N6283,
2N6286
2N6287 JANTX
amplifier transistor 2N6284
2N6283
2N6284
2N6285
2N6286
2N6287
2N6282 NEW ENGLAND SEMICONDUCTOR
2N62B
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS NUMERICAL JA N /JA N T X V TYPES AVAILABLE. 6 2 AMPS N P N .7
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Untitled
Abstract: No abstract text available
Text: SftOPTEK Product Bulletin JA N TX, JA N TX V , 2N5796U Septem ber 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U • • • Ceramic surface mount package Hermetically sealed Miniature package minimizes circuit board area required • Electrical performance similar to dual
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2N5796U
2N2907A
MIL-PRF-19500/496
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JANTXV2N2222AUA
Abstract: transistor s71 2N2222AUA
Text: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed
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2N2222AUA
2N2222AUA
MIL-PRF-19500/255
JANTX/TXV2N2222AUA
00D31Ã
JANTXV2N2222AUA
transistor s71
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2N7336
Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Text: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]
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IRFGG110
JANTX2N7336
JANTXVSN7336
MIL-S-1S500/59S]
VGS-10V*
I-235
IRFG6110,
2N7336
I-236
JANTXV2N7336
tp 26c
436D
IRFG6110
irfgg110
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2N5664
Abstract: cc 3053
Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,
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2N5664
2N5665
2N5666
2N5667
MIL-S-19500/455
cc 3053
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transistor a13
Abstract: A13 transistor
Text: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt
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0003b37
transistor a13
A13 transistor
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Untitled
Abstract: No abstract text available
Text: 19-0094. R e v 6, 7/95 M icroprocessor Supervisory Circuits _ A pplications _ Features ♦ 200ms Power-OK/Reset Timeout Period ♦ 1 |jA Standby Current, 30|jA Operating Current ♦ On-Board Gating of Chip-Enable Signals,
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200ms
MAX800L/M)
16-Pin
MAX691ACPE
MAX691ACSE
MAX691ACWE
GD13MÃ
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2N2222A JANTX
Abstract: 2N2222A JANTXV Transistor 2N2222A 2N2222A 2N6989U JANTX2N6989U jantxv2n6989u
Text: @ .Q P IE K Product Bulletin JAN TX, JAN TXV , 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JA N TX , JA N TX V, 2N6989U Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e noted • Ceram ic surface mount package • Herm etically sealed
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2N6989U
2N6989U
2N2222A
MIL-PRF-19500/559
JANTX2N6989U
00032G3
2N2222A JANTX
2N2222A JANTXV
Transistor 2N2222A
2N2222A
jantxv2n6989u
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PS2004
Abstract: VA9668 a9667
Text: NATL SEMICOND {MEMORY} IDE D b S D H S b 00bS7S3 fi | DS2001/ juA9665/DS2002//x A9666 DS2003/ja A9667/DS2004/ja A9668 High Current/Voltage Darlington Drivers General Description The DS2001 /]aA9665/DS2002/fnA9666/DS2003/)xA9667 DS2004/VA9668 are comprised of seven high voltage, high
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00bS7S3
DS2001/ju
A9665/DS2002/ju
A9666/DS2003/jj
A9667/DS2004/jaA9668
DS2001/
juA9665/DS2002//x
A9666
DS2003/ja
A9667/DS2004/ja
PS2004
VA9668
a9667
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HEXFETs FETs
Abstract: ALPS 102 lg motor DD ior 050a
Text: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IRFG911Q S N 7335 JA N T X 2N 7335 JA N T X V 2N 7335 HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETs 14 LEAD DU AL-IN-LINE Q UAD C ER A M IC S ID E BRAZED PACKAGE [REF: MIL-S-19500/599] Product Summary -100 Volt, 1.4 Ohm (P-Channel)
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IRFG911Q
MIL-S-19500/599]
IRFG9110
-100V
I-243
HEXFETs FETs
ALPS 102
lg motor DD
ior 050a
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2N3866A
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr m o% #f 1 l 1 1 I c I ^88888 Data Sheet No. 2N3866A $ id L SEMICONDUCTORS Type 2N3866A G eneric Part Num ber: 2N3866A Geometry 1007 Polarity NPN Qual Level: JA N -JA N S
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2N3866A
MIL-PRF-19500/398
2N3866A
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LQH3C470
Abstract: BD914 Sanyo OS-CON capacitors LT1316CMS8 LT1316CS8
Text: r r u u m TECHNOLOGY _ LT1316 Micropower DC/DC Converter with Programmable Peak Current Limit FCRTURCS D C S C R IP TIO n • Precise Control of Peak Switch Current ■ Quiescent Current: 33|jA in Active Mode 3|jA in Shutdown Mode ■ Low-Battery Detector Active in Shutdown
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LT1316
300mV
500mA
500mA
300mA
V/600mA
200mA
500mV
12joA
LQH3C470
BD914
Sanyo OS-CON capacitors
LT1316CMS8
LT1316CS8
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 4 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5154 G eneric Part Number: 2N5154 Geometry 9201 Polarity NPN Qual Level: JA N -JA N S
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2N5154
MiL-PRF-19500/544
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 3 L m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS Type 2N5153L G eneric Part Num ber: 2N5153L Geometry 9702 Polarity PNP Qual Level: JA N -JA N S
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2N5153L
MiL-PRF-19500/545
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Untitled
Abstract: No abstract text available
Text: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S he e t No. 2 N 2 8 5 7 U B m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS Type 2N2857UB G eneric Part Num ber: 2N2857 Geometry 0011 Polarity NPN Qual Level: JA N -JA N S
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2N2857UB
2N2857
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LTC1154
Abstract: No abstract text available
Text: 11 m i / r u ^Æ Êm F LTC1154 m TECHNOLOGY High-Side M icro po w e r MOSFET Driver F€ R TU R € S D € S C R IP T IO fl • Fully Enhances N-Channel Power MOSFETs ■ 8|jA Iq Standby Current ■ 85|jA Iq ON Current ■ No External Charge Pump Capacitors
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LTC1154
LTC1154
CA95035-7487
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 2 L o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5152L G eneric Part Num ber: 2N5152L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S
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2N5152L
MiL-PRF-19500/544
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 1 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5151 G eneric Part Num ber: 2N5151 Geometry 9702 Polarity PNP Qual Level: JA N -JA N S
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2N5151
MiL-PRF-19500/545
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