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    JAPAN B-CAS CARD Search Results

    JAPAN B-CAS CARD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10067847-401RLF Amphenol Communications Solutions SMART CARD Visit Amphenol Communications Solutions
    76308-145LF Amphenol Communications Solutions PV CARD CONNECTOR Visit Amphenol Communications Solutions
    91615-805ALF Amphenol Communications Solutions DUBOX CARD CONNECTOR Visit Amphenol Communications Solutions
    91601-810ALF Amphenol Communications Solutions DUBOX CARD CONNECTOR Visit Amphenol Communications Solutions
    91601-812ALF Amphenol Communications Solutions DUBOX CARD CONNECTOR Visit Amphenol Communications Solutions

    JAPAN B-CAS CARD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: MEMORY DRAM CARD JllD A * liR Ä M ö ird Guide Line Ver. 2.0] cöMörrnabie 8 DYNAMIC RANDOM ACCESS MEMORY CARD 16 M/32 M - B Y T E DESCRIPTION The MB98B7515 is a DRAM Card 4,194,304 words x 32 bits with eight MB8117400A’s mounted. The MB98B7516 is a DRAM Card (4,194,304 words x 36 bits) viith eight MB8117400A’s and four MB814100A


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    MB98B7515 MB8117400A MB98B7516 MB814100A MB98B7517 MB98B7518 jeida dram 88 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU January 1994 Edition 1.0 DATA SHEET MB98B7513-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 16 bits / 2M x 32 bits The Fujitsu MB98B7513 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices. This card is capable of storing and


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    MB98B7513-80 MB98B7513 MB814400AL 88-pin 16-bit 32-bit 000b405 MB98B PDF

    Untitled

    Abstract: No abstract text available
    Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.


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    MB98B7514 MB814400AL MB81C1000AL 88-pin 18-bit 36-bit MB98B7514-80 CRD-88P-M01) PDF

    j2449

    Abstract: No abstract text available
    Text: N EW PRODUCT HB56G136CC Series 1,048,576-Word X 36-Bit High Density Dynamic RAM Card 0H IT A C H I Rev.O Ju l. 03, 1992 Description The HB56G136CC is a 1M X 36 dynamic R A M Card, mounted 8 pieces of 4Mbit D RAM HM514900LTT sealed in T SO P package. An outline of the HB56G13GCC is 88-pin two piece connector package.


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    HB56G136CC 576-Word 36-Bit HM514900LTT) HB56G13GCC 88-pin j2449 PDF

    Untitled

    Abstract: No abstract text available
    Text: January 1994 Edition 1.0 FUJITSU DATA SHEET MB98B7512-80 DRAM MEMORY CARD D Y N A M IC R A N D O M A C C E S S M EM O RY CARD 2M x 18 bits / 1 M x 36 bits The Fujitsu M B98B7512 is a Dynam ic Random Access Memory DRAM card consisting of eight MB814400AL devices and four MB81C1000AL devices. This


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    MB98B7512-80 B98B7512 MB814400AL MB81C1000AL 88-pin 18-bit 37MT75b PDF

    SDHC schematic

    Abstract: SDIO CARD Layout EVK1104 sdhc atmel AVR32787 EVK1104 ADC SDHC avr write read to mmc sdio mmc connector TPA152
    Text: AVR32801: UC3A3 Schematic Checklist Features • • • • • • • • Power circuit Reset circuit USB connection External bus interface ABDAC sound DAC interface JTAG and Nexus debug ports Clocks and crystal oscillators MMC, SD-card, SDHC, SDIO and CE-ATA interface


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    AVR32801: 32-bit 32130B-AVR32-04/10 SDHC schematic SDIO CARD Layout EVK1104 sdhc atmel AVR32787 EVK1104 ADC SDHC avr write read to mmc sdio mmc connector TPA152 PDF

    D4104

    Abstract: nlpin
    Text: iN E m p R O D u m im m m i HB56G132CC- x x S Series 1,048,576-WordX 32-Bit High Density Dynamic RAM Card Rev.l Dec. 08,1992 0 H IT A C H I D escrip tion The IIB56G132CC-X X S is a 1MX 32 dynamic RAM Card, m ounted 8 pieces of 4M bit DRAM HM51S4800ALTT sealed inTSO P package.


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    HB56G132CC- 576-WordX 32-Bit IIB56G132CC-X HM51S4800ALTT) 88-pin IIB56G132CC- HB56G132CC-X D4104 nlpin PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs iia m m a c r y Some of contents are subject to change without notice. MH4V645/6445AXJJ-5,-6,-5S,-6S HYPER PAGE MODE 268435456-BIT 4194304-WQRD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS Refresh Row Add. Col Add. This is family of 4194304 - word by 64 - bit dynam ic RAM


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    MH4V645/6445AXJJ-5 268435456-BIT 4194304-WQRD 64-BIT A0-A12 MH4V645AXJJ MH4V6445AXJJ A0-A11 MIT-DS-0085-1 26/Feb PDF

    Untitled

    Abstract: No abstract text available
    Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.


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    HB56G51236CC 288-WordX 36-Bit 512KX36 514900LTT) 88-pin PDF

    LE57D111TC

    Abstract: Le57D11TC PLCC-48 footprint TISP61089
    Text: P R E L I M I N A R Y Dual SLIC Dual Subscriber Line Interface Circuit Le57D11 Device APPLICATIONS    DESCRIPTION Ideal for low cost, high performance line card applications CO, DLC Meets requirements for countries such as: China, Korea, Japan, Taiwan, and Australia


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    Le57D11 GF0029002 Programm5521 SE-16970 LE57D111TC Le57D11TC PLCC-48 footprint TISP61089 PDF

    EBJ17RG4EFWP-GN-F

    Abstract: EBJ17RG4EFWP
    Text: COVER DATA SHEET 16GB Registered DDR3L SDRAM DIMM EBJ17RG4EFWD EBJ17RG4EFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3L SDRAM sealed


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    EBJ17RG4EFWD EBJ17RG4EFWP 2048M 240-pin 1600Mbps/1333Mbps M01E1007 E2003E10 EBJ17RG4EFWP-GN-F EBJ17RG4EFWP PDF

    EBJ81RF4EDWP-GN-F

    Abstract: Elpida Memory
    Text: COVER DATA SHEET 8GB Registered DDR3L SDRAM DIMM EBJ81RF4EDWD EBJ81RF4EDWP 1024M words 72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR3L SDRAM sealed


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    EBJ81RF4EDWD EBJ81RF4EDWP 1024M 240-pin 1600Mbps/1333Mbps M01E1007 E1816E40 EBJ81RF4EDWP-GN-F Elpida Memory PDF

    mitsubishi year code

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs KÄ-atr- MH8V7245BWZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245BWZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8


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    MH8V7245BWZTJ 8388608-word 72-bit H8V7245BW MIT-DS-0287-0 mitsubishi year code PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3L SDRAM DIMM EBJ40EG8EFWA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA


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    EBJ40EG8EFWA 240-pin 1600Mbps/1333Mbps M01E1007 E1952E10 PDF

    capacitor 56J pF

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 3VEDOB72D~ SEMICONbUCTOR TECHNICAL DATA — lM x72 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered For Error Correction Code Applications 8 Megab~e JEDEGStandard 168–Lead Dual-In-tine Single 3.3 V Power Supply, LWL<ompatible


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    3VEDOB72D~ 1Mx72s3V 140W1-247 602-2W609 3VEDOB72DID capacitor 56J pF PDF

    Micron 48LC8M16

    Abstract: PCI08-DK sam9708 48lc8m16 PCI08-DK sam9708 RAS13-CAS9 MIDI SAM9708 k335 WD-065 ATSAM9708
    Text: Features • One Audio ADC • • • • • – Burr-Brown PCM1800 20bit 95dB SNR Two Audio DACs – Burr-Brown PCM1739 (24bit 105dB SNR) 128Mbit SDRAM – Micron® 48LC8M16 (8M x 16) FPGA for PCI management – XILINX® XCS30XL DIMM socket for SDRAM expansion up to 256 MB


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    PCM1800 20bit PCM1739 24bit 105dB 128Mbit 48LC8M16 XCS30XL ATSAM9708 PCI08-DK Micron 48LC8M16 PCI08-DK sam9708 48lc8m16 sam9708 RAS13-CAS9 MIDI SAM9708 k335 WD-065 PDF

    EDJ4208BBBG-DJ-F

    Abstract: EDJ4208BBBG-GN-F EDJ4208BBBG EDJ4204BBBG EBJ81UG8BBU0 E1800E
    Text: DATA SHEET 8GB DDR3 SDRAM SO-DIMM EBJ81UG8BBU0 1024M words x 64 bits, 2 Ranks Specifications Features • Density: 8GB • Organization  1024M words × 64 bits, 2 ranks • Mounting 16 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual


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    EBJ81UG8BBU0 1024M 204-pin 1600Mbps/1333Mbps to1066Mbps/800Mbps/667Mbps M01E1007 E1803E20 EDJ4208BBBG-DJ-F EDJ4208BBBG-GN-F EDJ4208BBBG EDJ4204BBBG EBJ81UG8BBU0 E1800E PDF

    IDQ25186

    Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
    Text: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)


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    5VFPMB72D/D 1Mx72 MA721 BJ48TADG60 140N1-2 5VFPMB72D~ IDQ25186 VSS1641NC IMX72 Li-49 39NC60 motorola bq50 PDF

    EDJ2108BCSE-DJ-F

    Abstract: EDJ2108BCSE-DJ-F rev C udimm 2g EbJ20ef8bcfa-dj-f Elpida DDR3 manual
    Text: DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ20EF8BCFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 9 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


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    EBJ20EF8BCFA 240-pin 1600Mbps/1333Mbps M01E1007 E1746E10 EDJ2108BCSE-DJ-F EDJ2108BCSE-DJ-F rev C udimm 2g EbJ20ef8bcfa-dj-f Elpida DDR3 manual PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words x 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words × 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


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    EBJ40EG8BFWB 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1977E30 PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 8GB Unbuffered DDR3 SDRAM DIMM EBJ81EG8BFWB 1024M words  72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 18 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


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    EBJ81EG8BFWB 1024M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1978E20 PDF

    ELPIDA DDR3L

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line


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    EBJ40UG8EFU0 204-pin 1600Mbps/1333Mbps 1066Mbps/800Mbps /667Mbps M01E1007 E1938E30 ELPIDA DDR3L PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 8GB DDR3L SDRAM SO-DIMM EBJ81EG8EFUA 1024M words  72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 18 pieces of 4G bits DDR3L SDRAM sealed in FBGA


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    EBJ81EG8EFUA 1024M 204-pin 1600Mbps 1333Mbps/1066Mbps /800Mbps/667Mbps M01E1007 E1980E10 PDF

    EBJ40UG8EFU0

    Abstract: EBJ40UG8EFU0-GN-F
    Text: COVER PRELIMINARY DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line


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    EBJ40UG8EFU0 204-pin 1600Mbps/1333Mbps 1066Mbps/800Mbps /667Mbps M01E1007 E1938E10 EBJ40UG8EFU0 EBJ40UG8EFU0-GN-F PDF