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    JAPAN TRANSISTORS 1981 Search Results

    JAPAN TRANSISTORS 1981 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    JAPAN TRANSISTORS 1981 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC1961

    Abstract: transistor c 301b japanese transistor manual 1981 2SA771 138D 2SA770 Transistor Manual 1981
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SA770 2SA771 2SC1961 transistor c 301b japanese transistor manual 1981 138D Transistor Manual 1981 PDF

    7447

    Abstract: rohm 4453 MANUFACTURE of code ROHM 7447 an 8751 laser diode datasheet 7447 Sanwa ICS 0930 6433048 ROHM
    Text: Principal Subsidiaries <Domestic> Corporate name Equity owned by ROHM CO., LTD. Established Manufacture of ROHM products diodes, LEDs, laser diodes, and LED displays 66.6% Aug. 1966 Manufacture of ROHM products (transistors, diodes, capacitors, and monolithic ICs)


    Original     		PDF

    IEC 68-2-63

    Abstract: transistors Si 6822 MIL-STD-781 transistors 6822 si MIL-STD-785 MIL-STD-721 The Japanese Transistor Manual 1981 IEC 68-2-28 AND 7411 NATIONAL SEMICONDUCTOR MARKING BM
    Text: STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES VIII. STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES 1. QUALITY SYSTEM STANDARDS 1.1 INTRODUCTION TO THE ISO 9000 SERIES


    Original     		PDF

    AN-227

    Abstract: AN-261 C1995 LH0101 P6042 RC servo motors "dc gain" transfer function time constant servo design LH0101 equivalent
    Text: National Semiconductor Application Note 261 July 1981 The LH0101 is a power operational amplifier capable of delivering a high-current low-distortion output The device is conservatively rated at 2 amps continuous current A novel design technique is used to eliminate the crossover distortion often plaguing power op amps Additional features include a frequency response from DC to greater than 4 MHz


    Original     		LH0101 AN-227 AN-261 C1995 P6042 RC servo motors "dc gain" transfer function time constant servo design LH0101 equivalent PDF

    NEC 10F

    Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
    Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.


    OCR Scan     		devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book PDF

    AN274

    Abstract: AN-274 NS LM358 LM324 LM339 LM358 LM389 LM3900 LM392 LM393
    Text: National Semiconductor Application Note 274 July 1981 With a span accommodation down to 180 mV, this 8-bit unit can also replace a 12-bit analog-to-digital device in some applications. Compatibility Criteria Differ To help meet the rising demand for easier interfacing between analog-to-digital converters and microprocessors, the


    Original     		12-bit ADC0801-05 20-pin AN274 AN-274 NS LM358 LM324 LM339 LM358 LM389 LM3900 LM392 LM393 PDF

    LM391-80

    Abstract: TY-85 BD349 300w audio amp schematic circuit LF357 audio amplifiers high speed op amp voltage booster 12v 300w audio amplifier circuit 300w audio amp schematic shaker LF0002
    Text: National Semiconductor Application Note 272 September 1981 Although modern integrated circuit operational amplifiers ease linear circuit design IC processing limits amplifier output power Many applications however require substantially greater output voltage swing or current or both than IC


    Original     		PDF

    LM391-80

    Abstract: high voltage booster high speed op amp voltage booster TY-85 BD349 LF357 audio amplifiers 300w audio amplifier circuit diagram 300w audio amp schematic circuit pin diagram of LM308 Op Amp IC 300w power amplifier circuit diagram
    Text: National Semiconductor Application Note 272 September 1981 Although modern integrated circuit operational amplifiers ease linear circuit design, IC processing limits amplifier output power. Many applications, however, require substantially greater output voltage swing or current or both than IC


    Original     		AN-272 LM391-80 high voltage booster high speed op amp voltage booster TY-85 BD349 LF357 audio amplifiers 300w audio amplifier circuit diagram 300w audio amp schematic circuit pin diagram of LM308 Op Amp IC 300w power amplifier circuit diagram PDF

    opera 415 lyric

    Abstract: lcd dvi 1185 011 03 RLD65PZB5 Laser Diode for dvd Recording dpi 602 pressure apollo guidance Dalian Eastern Display Power Convertibles dc/dc universal joint used in finishing mill National Controls ne 545
    Text: Annual Report 2004 For the Year Ended March 31, 2004 Exquisite Geometry MIZUNO KATSUHIKO 5th group consisting of 2 stones 4th group consisting of 2 stones 2nd group consisting of 3 stones 1st group consisting of 5 stones 3rd group consisting of 3 stones


    Original     		PDF

    8080 analog to digital converter

    Abstract: LM393 line follower working of ic lm339 AN-274 op code for digital clock using microprocessor 80 TL 8721 adc0801 linear devices C1995 8721 LM358
    Text: National Semiconductor Application Note 274 July 1981 With a span accommodation down to 180 mV this 8-bit unit can also replace a 12-bit analog-to-digital device in some applications To help meet the rising demand for easier interfacing between analog-to-digital converters and microprocessors the


    Original     		12-bit ADC0801-05 20-pin 8080 analog to digital converter LM393 line follower working of ic lm339 AN-274 op code for digital clock using microprocessor 80 TL 8721 adc0801 linear devices C1995 8721 LM358 PDF

    MJ10100

    Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
    Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,


    Original     		AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first PDF

    162b5

    Abstract: national semiconductor MDAC AN-277 C1995 DAC1000 DAC1001 DAC1002 DAC1006 DAC1007 DAC1008
    Text: National Semiconductor Application Note 277 James B Cecil July 1981 A second generation of the popular MDAC or multiplying DAC is now available which has been designed to provide an easy interface to microprocessor systems These new MICRO-DAC products are low power drain CMOS converters which typically require only 0 5 mA supply current (2 mA


    Original     		PDF

    PCRC-55

    Abstract: PCRC-11 LM389 Humidity dew sensor LM389S 8713 "Logarithmic Amplifier" 2N2222A AN-256 C1995
    Text: National Semiconductor Application Note 256 August 1981 Of all common environmental parameters humidity is perhaps the least understood and most difficult to measure The most common electronic humidity detection methods albeit highly accurate are not obvious and tend to be expensive and complex See Box Accurate humidity measurement is vital to a number of diverse areas including


    Original     		PDF

    NSB3881

    Abstract: NSB5881 INS8060 74C911 NSA1298 NSN581 MICROPROCESSOR Z80 7segment 4-DIGIT 7-SEGMENT LED DISPLAY datasheet MULTIPLEX MM2114 NSB7881
    Text: Fairchild Semiconductor Application Note 257 May 1981 I. INTRODUCTION The MM74C911, MM74C912 and MM74C917 are CMOS display controllers that control multiplexing of 8-segment LED displays. These devices each have an on-chip multiplex oscillator and associated logic to easily implement multi-digit


    Original     		MM74C911, MM74C912 MM74C917 MM74C911 NSB3881 NSB5881 INS8060 74C911 NSA1298 NSN581 MICROPROCESSOR Z80 7segment 4-DIGIT 7-SEGMENT LED DISPLAY datasheet MULTIPLEX MM2114 NSB7881 PDF

    NE5230

    Abstract: calculating rectifier circuits MTBF
    Text: NE5230, SA5230 Product Preview Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		NE5230, SA5230 NE5230 NE5230/D calculating rectifier circuits MTBF PDF

    rosemount 118

    Abstract: quad comparator LM329 sine wave inverter circuit diagram 2n2369s design sine wave power inverter 2N2369 transistor oven rtd sensor Diode 1N4148 as temperature sensor TRANSISTOR a4 rosemount temperature sensors
    Text: National Semiconductor Application Note 262 May 1981 The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilities of FET op amps, including low bias current and speed, and some additional advantages. The cost-per-amplifier is lower because


    Original     		AN-262 rosemount 118 quad comparator LM329 sine wave inverter circuit diagram 2n2369s design sine wave power inverter 2N2369 transistor oven rtd sensor Diode 1N4148 as temperature sensor TRANSISTOR a4 rosemount temperature sensors PDF

    MJ10100

    Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021
    Text: AN-861 M O TO R O LA Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES Prepared by W a r re n S c h u ltz A p p lic a tio n s E n g in e e rin g M o t o r d rives p resent a u n iq u e set o f safe op erating area


    OCR Scan     		AN-861 AN861/D AN861/D MJ10100 MJ1002 RBSOA mj1010 AN-861 MJ10021 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU879 – February 2013 DRV8839 Evaluation Module This document is provided with the DRV8839 customer evaluation module EVM as a supplement to the DRV8839 datasheet. It details the hardware implementation of the EVM. 1 2 3 4 Contents PCB (Top-Assembly View) .


    Original     		SLVU879 DRV8839 PDF

    Granberg

    Abstract: PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
    Text: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0 . Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. W hat is better, if anything, with the power FETs if we can get a bipolar tran sisto r w ith an equal power rating for less th an half the price?


    OCR Scan     		AN-860 AN86Q/D AN860/D Granberg PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages PDF

    2n2369s

    Abstract: free transistor a4s quad comparator LM329 2N2369 transistor tl 2N3904 TRANSISTOR rosemount 118-mg rosemount 118 rosemount 118 mf sensor rosemount 118 2N4393, NATIONAL
    Text: National Semiconductor Application Note 262 May 1981 The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilities of FET op amps including low bias current and speed and some additional advantages The cost-per-amplifier is lower because


    Original     		PDF

    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


    Original     		AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403 PDF

    S5230

    Abstract: NE5205 NE5230 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG
    Text: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		NE5230, SA5230, SE5230 NE5230 NE5230/D S5230 NE5205 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG PDF

    S5230

    Abstract: NE5230 equivalent NE5205 NE5230
    Text: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		NE5230, SA5230, SE5230 NE5230 NE5230/D S5230 NE5230 equivalent NE5205 PDF

    ttl to cmos converter

    Abstract: 8085 microprocessor Datasheet AN-275 C1995 DAC1000 DAC1001 DAC1002 DAC1006 DAC1007 DAC1008
    Text: National Semiconductor Application Note 275 James B Cecil July 1981 With double buffering 8 9 and 10-bit multiplying units are useful for microprocessor control of gain and attenuation A new family of complementary MOS multiplying digital-toanalog converters has arrived on the scene and promises to


    Original     		10-bit ttl to cmos converter 8085 microprocessor Datasheet AN-275 C1995 DAC1000 DAC1001 DAC1002 DAC1006 DAC1007 DAC1008 PDF