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    JB SOT23 TRANSISTOR Search Results

    JB SOT23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    JB SOT23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JB marking transistor

    Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
    Text: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value


    Original     		PDF MMBTH10 OT-23 MMBTH10 OT-23 JB marking transistor transistor marking 3em transistor marking JB J JB transistor marking 3EM sot-23 C40 SOT23

    LMBTH10QLT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10QLT1 OT-23 LMBTH10QLT1-5/5 LMBTH10QLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10PLT1 OT-23 LMBTH10PLT1-5/5

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10QLT1 OT-23 LMBTH10QLT1-5/5

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • NPN Silicon 0.110(2.80) ‡/  0.103(2.60) 0.056(1.40) MECHANICAL DATA


    Original     		PDF MMBTH10 OT-23 OT-23, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm FEATURES • NPN Silicon 0.120(3.04) ‡ 0.110(2.80) ‡ +LJK&XUUHQW*DLQ%DQG:LGWK3URGXFW


    Original     		PDF MMBTH10 OT-23 OT-23, MIL-STD-750,

    MMBTH10

    Abstract: MPSH10 MPSH11
    Text: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board


    Original     		PDF MMBTH10 OT-23 1000MHz MMBTH10 MPSH10 MPSH11

    MMBTH10

    Abstract: MPSH10 MPSH11 sot23 jb jb transistor
    Text: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board


    Original     		PDF MMBTH10 OT-23 1000MHz MMBTH10 MPSH10 MPSH11 sot23 jb jb transistor

    MMBTH10LT1

    Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
    Text: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C


    Original     		PDF MMBTH10LT1 OT-23 FR-50 1000MHz MMBTH10LT1 MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters

    MPSH10 s parameters

    Abstract: MMBTH10LT1 MPSH10 MPSH11
    Text: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C


    Original     		PDF MMBTH10LT1 OT-23 FR-500 1000MHz MPSH10 s parameters MMBTH10LT1 MPSH10 MPSH11

    marking 3EM sot-23

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage


    Original     		PDF LMBTH10LT1G 3000/Tape LMBTH10LT3G 10000/Tape marking 3EM sot-23

    LMBTH10LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SOT–23


    Original     		PDF LMBTH10LT1 OT-23 LMBTH10LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS


    Original     		PDF LMBTH10QLT1G 3000/Tape LMBTH10QLT3G 10000/Tape OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBTH10QLT1G S-LMBTH10QLT1G LMBTH10QLT3G S-LMBTH10QLT3G 3000/Tape 10000/Tape

    LMBTH10LT1G

    Abstract: marking JB diode transistor marking 3em
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS


    Original     		PDF LMBTH10LT1G 3000/Tape LMBTH10LT3G 10000/Tape OT-23 LMBTH10LT1G marking JB diode transistor marking 3em

    JB marking transistor

    Abstract: marking JB diode transistor marking JB LMBTH10LT1G
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS


    Original     		PDF LMBTH10QLT1G 3000/Tape LMBTH10QLT3G 10000/Tape OT-23 JB marking transistor marking JB diode transistor marking JB LMBTH10LT1G

    LMBTH10LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and LMBTH10LT1G S-LMBTH10LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBTH10LT1G S-LMBTH10LT1G LMBTH10LT3G S-LMBTH10LT3G 3000/Tape 10000/Tape LMBTH10LT1G

    MMBTH10

    Abstract: No abstract text available
    Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic


    Original     		PDF MMBTH10 2002/95/EC OT-23, MIL-STD-750, MMBTH10

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage


    Original     		PDF LMBTH10WT1G SC-70/SOTâ

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1G 1 BASE Featrues 3 z Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage


    Original     		PDF LMBTH10QWT1G SC-70/SOT-323

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23

    514 transistor

    Abstract: MMBC1622D7 b 514 transistor MMBC1622D6
    Text: S A MS UN G SEMICO ND UCT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR — — “ — — :- :- rT i < v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C ! i Characteristic | Collector-Base Voltage


    OCR Scan     		PDF MMBC1622D7 OT-23 MMBC1622D6 100mA, 100MHz 514 transistor MMBC1622D7 b 514 transistor

    Untitled

    Abstract: No abstract text available
    Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current


    OCR Scan     		PDF KSC3123 OT-23 200MHz, 260MHz

    Untitled

    Abstract: No abstract text available
    Text: büE D m 0133167 0000520 ^33 « S M L B 'T ' 3S-\> SEMELAB PLC SEMELAB 2N2907ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e n s io n sin m m


    OCR Scan     		PDF 2N2907ACSM