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    Belden Inc HJ-CPAD506

    CPAD506 BNC T/3FEMALE
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    Mouser Electronics HJ-CPAD506
    • 1 $5.37
    • 10 $4.89
    • 100 $4.3
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    Belden Inc HJ-CPAD501

    BNC JACK TO RCA PLUG ADAPTER
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    DigiKey HJ-CPAD501 Bulk 10
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    Belden Inc HJ-CPAD103

    F FEMALE TO RCA MALE ADAPTER
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    Mouser Electronics HJ-CPAD103
    • 1 $3.94
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    Belden Inc HJ-CPAD515

    BNC MALE TO RCA FEMALE ADAPTER
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    DigiKey HJ-CPAD515 Bulk 10
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    Vishay Intertechnologies VJ0603A220JCPAJ

    Multilayer Ceramic Capacitors MLCC - SMD/SMT VJ0603 C0G 220 0.05 non-magnetic copper barrier 250V unmarked 7" reel tape
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    Mouser Electronics VJ0603A220JCPAJ
    • 1 $0.44
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    JCPA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAS-5010

    Abstract: 53368 62212 ETS500 119185
    Text: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA


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    PDF RM2012XW-QMLV 6354IR EQR2012BA EM16383E JCPAC010 7H4381G019 e-128 MAS-5010 53368 62212 ETS500 119185

    Hi-rel 8936

    Abstract: 45288 2167.1 MAS50 MAS-5010 1764 689 74845 8195 82583 8533
    Text: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA


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    PDF RM2012XW-QMLV 6354IR EQR2012BA EM16372S1 JCPAC010 7H4385K019 Hi-rel 8936 45288 2167.1 MAS50 MAS-5010 1764 689 74845 8195 82583 8533

    transformateur

    Abstract: bornera redresseur philips tubes borne FILTRE SECTEUR transformateur de puissance 2X40 rs tube 2x350Veff
    Text: _ _ f. Le tube redresseur E Z 4 Le tube EZ 4 est un tube redresseur biplaque à chauffage indi­ rect étudié pour des postes de grande puissance et pour de petits amplifica­ teurs alimentés par le secteur alterna­ tif. Il peut alimenter facilement un poste


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    PDF 2X300 2X350 2X400 transformateur bornera redresseur philips tubes borne FILTRE SECTEUR transformateur de puissance 2X40 rs tube 2x350Veff

    TUBE EL3

    Abstract: m6411 tube ek2 ampli schema condensateur electrolytique SCHEMA chauffage par induction philips miniwatt philips miniwatt ez miniwatt cy2 2X40
    Text: BULLETIN T E C H N IQ U E EDITE PAR LE BUREAU D’ETUDES DE LA S.A. PHILIPS 2, cite PARADIS, PARIS. TEL TAITÔ. 69-80 99-80. MAI-JUILLET 1936 l a m p e s RECEPTRICES "MINI WATT" TUBES AM PLI­ FICATEURS T U B E S REDRESSEURS TUBES A RAYONS CATHODIQUES T U


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    Q729

    Abstract: 16-DRAM Q67100-Q727
    Text: SIE M E N S 256 K X 16-Bit Dynamic RAM Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJ-60/-70/-80 HYB 514171BJL-60/-70/-80 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time


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    PDF 16-Bit 514171BJ-60/-70/-80 514171BJL-60/-70/-80 6235b05 005S372 514171BJ/BJ L-60/-70/-80 16-DRAM Q729 16-DRAM Q67100-Q727

    c 4977 transistor

    Abstract: No abstract text available
    Text: WJ-PA3 / SMPA3 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +24.5 dBm TYP. @ +15Vdc ♦ HIGH THIRD ORDER INTERCEPT POINT: +34 dBm (TYP.) ♦ MEDIUM GAIN: 14.5 dB (TYP.) ♦ LOW VSWR: < 1.5:1 (TYP.) Outline Drawings


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    PDF 15Vdc to-50 c 4977 transistor

    Untitled

    Abstract: No abstract text available
    Text: ±0. 05 1C 3 J ‘3*0'1 J CD m 3. 3 ± o . 1 1 T c ¿0*05 1< CM N CPITCH 'NOT ACCUMULATED .TOLERANCE ) 0 0 . 8 ±0-05 œ I 1* TI I I I I 1 I TI I I 1 I I I TI I I I I I I I I .o i i • n I II J V k A j UI UI i :I H -1# f I I * ^ DETAIL ^ S i « ij mm


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    PDF AMP-J010-2C

    transistor schottky model spice

    Abstract: No abstract text available
    Text: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5


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    PDF VJ800 T-H2-21 transistor schottky model spice

    Untitled

    Abstract: No abstract text available
    Text: WJ-PA2/ SMPA2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +25 dBm TYP. HIGH EFFICIENCY WIDE POWER SUPPLY RANGE: +5 TO +24 VOLTS +24 V O utline D raw ings PA2 Specifications * 0.200 (5.08) Guaranteed


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    PDF 0721ci

    Untitled

    Abstract: No abstract text available
    Text: 2 9 .0 NOTES; 1. 2. i* PRODUCT S P E C , i 1 C S—5 3 0 2 A P P L I C A B E L CONTACT P / N TA0 CONTACT. 17STS0Ci&#39;2Q-*16AW S> : 1 . 2. 3. a s = f Z' & £? b S ¿ # r*- ~ r - =3 v- ? >• : i 7 5 J5 o -: :c * 2 o - ^ s a w g : 1 7 5 14 9- f K ' 2S - * 2 2 A WSJ


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    PDF 17STS0Ci FJQO-0856-02 T1/13

    TNY 176 PN EQUIVALENT

    Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
    Text: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.


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    jeida dram 88 pin

    Abstract: jcpa
    Text: IBM11J8320CL 8M x 32 5.0V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: -70 I rac RAS Access Time 70ns tcAC CAS Access Time 25ns *AA Access Time From Address 42ns I rc Cycle Time 130ns tpc Fast Page Mode Cycle Time 45ns Single 5.0V, ± 0.25V Power Supply


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    PDF IBM11J8320CL 88Pin 130ns 256ms 88-pin 64G1729 MMDI24DSU-00 IBM11J8320CL jeida dram 88 pin jcpa

    Untitled

    Abstract: No abstract text available
    Text: " H Y li H D ft! « FAST PAGE MODE, X4/X8 DRAM Read Cycle 457 «HYUNDAI Early Write Cycle Note; 9 OE : Don’t cara '9 8 DRAM DATA BOOK tOEH CD ar ai ~o CD C o o LU o o (S' 4> X -J > :> |C0 < !oc ICO < •o ILU Is jo Read-modify-write Cycle Wwe 0 0 0 - 3 ( 7 ) ^ 1 - Hi -Z -O


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    PDF DQO-15 DQO-15 DQO-15,

    WP-13

    Abstract: ta22a DE456 1A039
    Text: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V16404A capa590) 1AD39-KMMAY95 HY51V16404AJ HY51V16404ASLJ HY51V16404AT 51V16404ASLT WP-13 ta22a DE456 1A039

    tw 2867

    Abstract: No abstract text available
    Text: WJ-PA12-1 / SMPA12-1 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. @+12 VOLTS2 ♦ WIDE BANDWIDTH: 10-1200 MHz ♦ LOW VSWR: < 1.5:1 (TYP.) ♦ WIDE POWER SUPPLY RANGE: +5 TO +14 VOLTS Outline Drawings


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    PDF WJ-PA12-1 SMPA12-1 PA12-1 tw 2867

    5118160BSJ

    Abstract: No abstract text available
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15


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    PDF 16-Bit 5118160BSJ-50/-60/-70 5118160BSJ-50/-60/-70 16-DRAM 5118160BSJ

    TIL 815

    Abstract: EFSH E5EW sharp LQ0
    Text: SHARP SPEC Ho. | M D G O 8 8 0 1 ISSUE: Aug. 7 1996 To ; Preliminary S P Product Type E C I F I C A T 8 M bit P S R A M I O N S 524,238xl6bit L H 6 P 8 2 Z 1 ïodel fio. (LH6P82Z1) EiThis specifications contains 25 Pages including the cover and appendix.


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    PDF 238xl6bit) LH6P82Z1) IH6P82Z1 LH8P82Z1 TIL 815 EFSH E5EW sharp LQ0