JE 720 TRANSISTOR Search Results

JE 720 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

JE 720 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor B 722 Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722 Text: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc	OCR Scan	MJE720 MJE721 MJE722 MJE710, MJE711, MJE712 BD165, 8D167, BD169 MJE720 transistor B 722 JE 720 transistor JE720 JE722 BD165 equivalent 500 WATT MJE722	PDF
Amplifier with transistor BC548 Abstract: pin diagram of transistor BC548 BC548 pin diagram pin diagram transistor BC547 BC547 collector characteristic curve transistor BC548 pin diagram of bc548 BC548 B 001 BC548 npn pin diagram of transistor BC558 Text: BC546 - BC548 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max	OCR Scan	BC546 BC548 BC556 BC558) MIL-STD-202, BC547 BC548 BC546-BC548 Amplifier with transistor BC548 pin diagram of transistor BC548 BC548 pin diagram pin diagram transistor BC547 BC547 collector characteristic curve transistor BC548 pin diagram of bc548 BC548 B 001 BC548 npn pin diagram of transistor BC558	PDF
pin diagram of transistor BC548 Abstract: BC547 collector characteristic curve pin diagram transistor BC547 BC548 pin diagram transistor bc547 features pin diagram of bc548 Amplifier with transistor BC548 BC548 BC546-BC548 BC548 TRANSISTOR Text: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 hM h H TO-92 Mechanical Data_ • • • • Case: TO-92, Plastic	OCR Scan	BC546 BC548 BC556 BC558) MIL-STD-202, BC547 BC548 DS21612 pin diagram of transistor BC548 BC547 collector characteristic curve pin diagram transistor BC547 BC548 pin diagram transistor bc547 features pin diagram of bc548 Amplifier with transistor BC548 BC546-BC548 BC548 TRANSISTOR	PDF
uPA77HA Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460 Text: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,	OCR Scan	uPA77HA K0958 K0985 upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460	PDF
2SC3734 Abstract: odv marking Text: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m	OCR Scan	2SA14611 2SC3734 odv marking	PDF
BC548 pin diagram Abstract: pin diagram transistor BC547 BC547 collector characteristic curve BC546-BC548 pin diagram of transistor BC548 bc547 pnp BC548 npn pin diagram of transistor BC558 BC548 ,BC558 DS21612 Text: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max A 4.45 4.70 4.70 B 4.46 C 12.7 — Mechanical Data_	OCR Scan	BC546 BC548 BC556 BC558) MIL-STD-202, BC547 BC548 BC548 pin diagram pin diagram transistor BC547 BC547 collector characteristic curve BC546-BC548 pin diagram of transistor BC548 bc547 pnp BC548 npn pin diagram of transistor BC558 BC548 ,BC558 DS21612	PDF
Untitled Abstract: No abstract text available Text: FZ 360 R 17 KF Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V 360 A V CES Thermal properties RthJC DC, pro Baustein / per module 0,035 RthCK pro Baustein / per module	OCR Scan	R17KF1 360RT7	PDF
Untitled Abstract: No abstract text available Text: FZ 360 R 17 KF Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,035 °CAW RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte VcES Maximum rated values 1700 V 360 A RthCK le 0,025 °C/W	OCR Scan	R17KF FZ3MB17KFJ* 12S-C, 34D3ET7 0002DQ7	PDF
k3017 Abstract: 2SK3017 Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm i c Q + nc: Low Drain-Source ON Resistance	OCR Scan	2SK3017 k3017 2SK3017	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS U n it in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Ex cellen t Sw itch in g Tim es : tf = 0.5 /us (M ax.) (l£ = 1.2 A )	OCR Scan	2SC5356 20/is	PDF
7B5A Abstract: 2SC5356 Text: TO SH IBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS U n it in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Excellent Sw itching Times : tf = 0.5 /¿s (M ax.) (l£ = 1.2 A )	OCR Scan	2SC5356 20//S 7B5A 2SC5356	PDF
2n871 Abstract: 2n 719a 2n720 Text: typ es 2M6SI, tmm. 7.nm. iwimk. 2N720A. 2N870, 2N871, 2MIÌIS -.»ftslBSÖ ¿KS&8.Ì N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V IS E D M A R C H 1973 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications	OCR Scan	2N720A. 2N870, 2N871, 2N720: 2n871 2n 719a 2n720	PDF
HT - 0886 Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108 Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2	OCR Scan	PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108	PDF
Untitled Abstract: No abstract text available Text: International I R Rectifier pd-916si IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • U ltra F a s t sw itching s p e e d o ptim ized for operating V freq u en cies 8 to 4 0 k H z in hard sw itching, 2 0 0 k H z ces = 600V in reso nan t m ode soft switching	OCR Scan	IRG4PSC71U	PDF

transistor F370 Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674 Text: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o	OCR Scan	2SC1674 I-125 SC-43 -411l transistor F370 t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674	PDF
2SD1491 Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236 Text: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,	OCR Scan	2SD1491 PTlTa-25 2SD1491 S0426 14s6 RL-50 m1.0425 l0897 u236	PDF
MRC 453 Abstract: No abstract text available Text: am sm u t R F P r o je c ts M * ic r o s e m i 140CommerceDrive Montgomeryville, PA18936-1913 Tel: 215 631-9840 ^ , SD 1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS C U S S C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN COMMON EMITTER	OCR Scan	450-512MHz J30AREJ MRC 453	PDF
transistor g23 mosfet Abstract: No abstract text available Text: P D -9.1146 bitemational Ë g i Rectifier IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve	OCR Scan	IRGPC30S 400Hz) O-247AC transistor g23 mosfet	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)	OCR Scan	GT10J312 GT10J312, GT10J312	PDF
2SB75 Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	7C-25-C) 2SB75 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C	PDF
2SC2718 Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886 Text: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS	OCR Scan	2SC2718 2SA1151 Pi078 0878j22 Ki0888 2SC2718 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886	PDF
TRANSISTOR FF75 Abstract: 1BW TRANSISTOR Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan	34D32CI7 TRANSISTOR FF75 1BW TRANSISTOR	PDF
PRW 200 Abstract: transistor VCE 1000V CMK2100 1bw transistor Text: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module	OCR Scan	34D32CI7 PRW 200 transistor VCE 1000V CMK2100 1bw transistor	PDF
Untitled Abstract: No abstract text available Text: 7 =3 ? - 3 / F 300 R 12 KF EU P EC 52E D • 3 ll 0 3 2 tì 7 000Q 254 Sb2 HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,062 °C/W Ttansistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte	OCR Scan	34D32CI7	PDF

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JE 720 TRANSISTOR Search Results

JE 720 TRANSISTOR Result Highlights (5)

JE 720 TRANSISTOR Datasheets Context Search

transistor B 722

Amplifier with transistor BC548

pin diagram of transistor BC548

uPA77HA

2SC3734

BC548 pin diagram

Untitled

Untitled

k3017

Untitled

7B5A

2n871

HT - 0886

Untitled

transistor F370

2SD1491

MRC 453

transistor g23 mosfet

Untitled

2SB75

2SC2718

TRANSISTOR FF75

PRW 200

Untitled