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    JE340 TRANSISTOR Search Results

    JE340 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JE340 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JE340

    Abstract: JE340G MJE340G je340 transistor je-340g to225 MJE340 transistor mje340g JE34 CASE 77
    Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating


    Original     		PDF MJE340 JE340 JE340G MJE340G je340 transistor je-340g to225 MJE340 transistor mje340g JE34 CASE 77

    MJE340G

    Abstract: No abstract text available
    Text: MJE340G Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating


    Original     		PDF MJE340G MJE350 MJE340/D MJE340G

    MJE340G

    Abstract: No abstract text available
    Text: MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating


    Original     		PDF MJE340 MJE350 MJE340/D MJE340G

    JE340

    Abstract: JE340G MJE340G je340 transistor MJE340 to225 MJE340 datasheet je-340g transistor mje340g
    Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating


    Original     		PDF MJE340 MJE340/D JE340 JE340G MJE340G je340 transistor MJE340 to225 MJE340 datasheet je-340g transistor mje340g

    MJE340G

    Abstract: No abstract text available
    Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating


    Original     		PDF MJE340 MJE340/D MJE340G

    MJE350

    Abstract: MJE340
    Text: PNP EPITAXIAL SILICON TRANSISTOR MJE350 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE340 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol


    OCR Scan     		PDF MJE350 MJE340 O-126 MJE350 MJE340

    je340 transistor

    Abstract: JE340
    Text: PNP EPITAXIAL SILICON TRANSISTOR MJE350 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE340 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage


    OCR Scan     		PDF MJE350 JE340 je340 transistor JE340

    JE340

    Abstract: je340 transistor je 340 je-340 MJE340 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. • • Suitable for Transformerless, Line-Operated Equipment


    OCR Scan     		PDF JE340 je340 transistor je 340 je-340 MJE340 MOTOROLA

    JE340

    Abstract: transistor m 1104 je340 transistor je340 to225aa MJE340 MOTOROLA je34
    Text: MOTOROLA Order this document by MJE340/D SEMICONDUCTOR TECHNICAL DATA M JE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. • • Suitable for Transformerless, Line-O perated Equipment


    OCR Scan     		PDF MJE340/D JE340 O-225AA transistor m 1104 je340 transistor je340 to225aa MJE340 MOTOROLA je34

    JE340

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i­ taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220


    OCR Scan     		PDF MJE340/T/SGS340 E350/T/SGS350 JE340, MJE340T, SGS340 O-125, O-220 OT-82 JE350, MJE350T, JE340

    je340

    Abstract: MJE340 je340 transistor MJE34 power transistor mje340 transistor MJE34 MJE340 b c e MJE340K je-340 AN-415
    Text: MJE340 SILICO N MJE340K 0.5 A M PER E POWER T R A N SIST O R PLASTIC M E D IU M POWER NPN S ILIC O N T R A N SIST O R NPN SILIC O N 300 VOLTS 20.8 and 30 WATTS . designed for power output stages for television, radio, phonograph and other consumer product applications.


    OCR Scan     		PDF MJE340 MJE340K MJE340 MJE340K NUE340K E340K je340 je340 transistor MJE34 power transistor mje340 transistor MJE34 MJE340 b c e je-340 AN-415

    MJE240

    Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
    Text: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250


    OCR Scan     		PDF O-126 mje180 mje170 mje181 mje171 mje182 mje172 mje200 mje210 mje220 MJE240 MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801

    JE340

    Abstract: je340 transistor NT340 je-340
    Text: TENTATIVE SPECIFICATION NEC SILICON POWER TRANSISTOR ELECTRON DEVICE N T340 HIGH VOLTAGE M ED IU M POWER NPN SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION Suitable for line-operated switching regulators and DC-DC converters. FEATURES • High Collector-Emitter Sustaining Voltage.


    OCR Scan     		PDF JE340. JE340 je340 transistor NT340 je-340

    JE370

    Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
    Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176


    OCR Scan     		PDF O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 JE370 je243 je712 je240 je200 je253 JE703 JE350 je250 JE720

    Je 243

    Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
    Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp


    OCR Scan     		PDF O-225AA) 2N5655 BD157 2N5656 MJE803# MJE703# 750/18k BD681# BD682# JE210Â Je 243 JE371 je240 JE171 JE340 transistor BD 341 bd189

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


    OCR Scan     		PDF 2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


    OCR Scan     		PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor