MJE340
Abstract: transformerless mje340 transistor MJE340 b c e MJE350 MJE-350
Text: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage
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MJE340
MJE350
O-126
MJE340
transformerless
mje340 transistor
MJE340 b c e
MJE350
MJE-350
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage
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MJE340
JE350
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JE350
Abstract: je350 transistor je-350 MJE350 MOTOROLA
Text: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA M JE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . d e sig ned for use in lin e -o p e ra te d ap p lica tio n s such as lo w power, lin e -o p e ra te d
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MJE350/D
JE350
O-225AA
je350 transistor
je-350
MJE350 MOTOROLA
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JE350
Abstract: je350 transistor je-350
Text: rzz SGS-THOMSON Ä T# m je 34o M J E 350 « « L E M « ! COMPLEMETARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES A PP LICA TIO N S • LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT D ESCRIP TIO N The MJE340 is a silicon epitaxial planar NPN
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MJE340
OT-32.
MJE350.
JE350
je350 transistor
je-350
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JE340
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220
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MJE340/T/SGS340
E350/T/SGS350
JE340,
MJE340T,
SGS340
O-125,
O-220
OT-82
JE350,
MJE350T,
JE340
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MJE240
Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
Text: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250
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O-126
mje180
mje170
mje181
mje171
mje182
mje172
mje200
mje210
mje220
MJE240
MJE721
MJE720
MJE241
MJE700
MJE701
MJE702
MJE703
MJE800
MJE801
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JE350
Abstract: JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MJE350
JE350
JE350G
je350 transistor
MJE350G
je-350
MJE350
transistor mje350g
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transistor mje29
Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
Text: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific
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BF457
BF458
BF459
BD137-6
BD138-6
BD137-10
BD138-10
BD167
BD168
BD139
transistor mje29
MJE30
bd139 bd140
MJE29
2N6407
transistor bd135-16
BD234
transistor BD140
BD136-16
BF459
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JE370
Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176
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O-126
2N4921
2N4922
2N4923
2N5190
2N5191
2N5192
2N5655
2N5656
2N5657
JE370
je243
je712
je240
je200
je253
JE703
JE350
je250
JE720
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je350g
Abstract: No abstract text available
Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350G
MJE340
MJE350/D
je350g
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Untitled
Abstract: No abstract text available
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −
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MJE350
MJE350/D
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JE350
Abstract: No abstract text available
Text: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350
MJE340
MJE350/D
JE350
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JE350
Abstract: No abstract text available
Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •
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MJE350G
MJE340
MJE350/D
JE350
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JE350
Abstract: je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −
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MJE350
MJE350/D
JE350
je350g
je350 transistor
MJE350G
je-350
MJE350
to225
MJE350 PIN
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rtd 2660
Abstract: RPX 10 PLC programming GK transistor 72 SK 10 BAT 065 je350 transistor kl1 TRANSISTOR JE350 resistor 400ohm VOLTAGE LEVEL RELAY SJ 195
Text: /= T ^7 # I S G S -T H O M S O N KÆO [^@[l[L[l©Tr[^ Q [RDD©S L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIM IN ARY DATA I • ■ . . ■ . ■ ■ . ■ ■ ■ M O N O C H IP S ILIC O N SLIC S U IT A B LE FOR P U B LIC /P R IV A T E A P P LIC A T IO N S
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L3037
100ms)
L3037
rtd 2660
RPX 10 PLC programming
GK transistor 72
SK 10 BAT 065
je350 transistor
kl1 TRANSISTOR
JE350
resistor 400ohm
VOLTAGE LEVEL RELAY SJ 195
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JE350
Abstract: TCA3383A TCA3383 je350 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TCA 3383 A/B TELEPHONE SET TRANSMISSION CIRCUIT The T C A 3 3 8 3 A and T C A 3 3 8 3 B telep ho n e set tra nsm issio n circu its replace the hybrid tra n sfo rm e r in a telephone set, inclu de tra n s m it and receive a m p lifie rs and pro vide line m a tching and sidetone cancellation
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383A/B
JE350
TCA3383A
TCA3383
je350 transistor
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return to zero decoder
Abstract: UAA 146 ZA 398 SGS Relay cf 318 gst 102 ptc resistor THERMAL PROTECTION L3037 L3037FN L3037QN PLCC44
Text: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT P R E L IM IN A R Y D A T A • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS . IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION ■ SOFT BATTERY REVERSAL WITH PROGRAMMABLETRANSITION TIME (3 to 100ms
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L3037
PLCC44
PQFP44
10x10)
L3037FN
L3037QN
100ms)
L3037
L3037T-40Â
return to zero decoder
UAA 146
ZA 398 SGS
Relay cf 318
gst 102
ptc resistor THERMAL PROTECTION
L3037QN
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JE350
Abstract: je350 transistor
Text: M MOTOROLA MC34016 Advance Information Cordless Universal Telephone Interface The MC34016 is a telephone line interface meant for use in cordless tele phone base stations for CTO, CT1, CT2 and DECT. The circuit forms the interlace towards the telephone line and performs all speech and line inter
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MC34016
MC34016
JE350
JE350
je350 transistor
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2N4401
2N5401
2N5551
2SA1004
2SA1010
2SA1013
2SA1015
2SA1016
2SA1017
2SA1019
2SC3133 cross reference
Hitachi 2sc281
NEC D882
A564A
D1163A
2sC1815 cross reference
a628a
krc1211
KRA2203
NEC D288
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UAA 146
Abstract: L3037 L3037FN L3037QN PLCC44 PQFP44 PTC 880 st diode cross reference Relay cf 318 0.8
Text: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT PR ELIM IN A R Y DATA . . • . ■ ■ ■ ■ ■ ■ . ■ ■ MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION
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L3037
PLCC44
PQFP44
10x10)
L3037FN
L3037QN
100ms)
L3037
L3037T-40Â
UAA 146
L3037QN
PTC 880
st diode cross reference
Relay cf 318 0.8
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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