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    JE350 TRANSISTOR Search Results

    JE350 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    JE350 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJE340

    Abstract: transformerless mje340 transistor MJE340 b c e MJE350 MJE-350
    Text: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage


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    MJE340 MJE350 O-126 MJE340 transformerless mje340 transistor MJE340 b c e MJE350 MJE-350 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage


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    MJE340 JE350 PDF

    JE350

    Abstract: je350 transistor je-350 MJE350 MOTOROLA
    Text: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA M JE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . d e sig ned for use in lin e -o p e ra te d ap p lica tio n s such as lo w power, lin e -o p e ra te d


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    MJE350/D JE350 O-225AA je350 transistor je-350 MJE350 MOTOROLA PDF

    JE350

    Abstract: je350 transistor je-350
    Text: rzz SGS-THOMSON Ä T# m je 34o M J E 350 « « L E M « ! COMPLEMETARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES A PP LICA TIO N S • LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT D ESCRIP TIO N The MJE340 is a silicon epitaxial planar NPN


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    MJE340 OT-32. MJE350. JE350 je350 transistor je-350 PDF

    JE340

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i­ taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220


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    MJE340/T/SGS340 E350/T/SGS350 JE340, MJE340T, SGS340 O-125, O-220 OT-82 JE350, MJE350T, JE340 PDF

    MJE240

    Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
    Text: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250


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    O-126 mje180 mje170 mje181 mje171 mje182 mje172 mje200 mje210 mje220 MJE240 MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801 PDF

    JE350

    Abstract: JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


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    MJE350 JE350 JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g PDF

    transistor mje29

    Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
    Text: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific


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    BF457 BF458 BF459 BD137-6 BD138-6 BD137-10 BD138-10 BD167 BD168 BD139 transistor mje29 MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459 PDF

    JE370

    Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
    Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176


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    O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 JE370 je243 je712 je240 je200 je253 JE703 JE350 je250 JE720 PDF

    je350g

    Abstract: No abstract text available
    Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


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    MJE350G MJE340 MJE350/D je350g PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −


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    MJE350 MJE350/D PDF

    JE350

    Abstract: No abstract text available
    Text: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


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    MJE350 MJE340 MJE350/D JE350 PDF

    JE350

    Abstract: No abstract text available
    Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


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    MJE350G MJE340 MJE350/D JE350 PDF

    JE350

    Abstract: je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −


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    MJE350 MJE350/D JE350 je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN PDF

    rtd 2660

    Abstract: RPX 10 PLC programming GK transistor 72 SK 10 BAT 065 je350 transistor kl1 TRANSISTOR JE350 resistor 400ohm VOLTAGE LEVEL RELAY SJ 195
    Text: /= T ^7 # I S G S -T H O M S O N KÆO [^@[l[L[l©Tr[^ Q [RDD©S L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIM IN ARY DATA I • ■ . . ■ . ■ ■ . ■ ■ ■ M O N O C H IP S ILIC O N SLIC S U IT A B LE FOR P U B LIC /P R IV A T E A P P LIC A T IO N S


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    L3037 100ms) L3037 rtd 2660 RPX 10 PLC programming GK transistor 72 SK 10 BAT 065 je350 transistor kl1 TRANSISTOR JE350 resistor 400ohm VOLTAGE LEVEL RELAY SJ 195 PDF

    JE350

    Abstract: TCA3383A TCA3383 je350 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TCA 3383 A/B TELEPHONE SET TRANSMISSION CIRCUIT The T C A 3 3 8 3 A and T C A 3 3 8 3 B telep ho n e set tra nsm issio n circu its replace the hybrid tra n sfo rm e r in a telephone set, inclu de tra n s m it and receive a m p lifie rs and pro vide line m a tching and sidetone cancellation


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    383A/B JE350 TCA3383A TCA3383 je350 transistor PDF

    return to zero decoder

    Abstract: UAA 146 ZA 398 SGS Relay cf 318 gst 102 ptc resistor THERMAL PROTECTION L3037 L3037FN L3037QN PLCC44
    Text: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT P R E L IM IN A R Y D A T A • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS . IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION ■ SOFT BATTERY REVERSAL WITH PROGRAMMABLETRANSITION TIME (3 to 100ms


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    L3037 PLCC44 PQFP44 10x10) L3037FN L3037QN 100ms) L3037 L3037T-40Â return to zero decoder UAA 146 ZA 398 SGS Relay cf 318 gst 102 ptc resistor THERMAL PROTECTION L3037QN PDF

    JE350

    Abstract: je350 transistor
    Text: M MOTOROLA MC34016 Advance Information Cordless Universal Telephone Interface The MC34016 is a telephone line interface meant for use in cordless tele­ phone base stations for CTO, CT1, CT2 and DECT. The circuit forms the interlace towards the telephone line and performs all speech and line inter­


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    MC34016 MC34016 JE350 JE350 je350 transistor PDF

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 PDF

    UAA 146

    Abstract: L3037 L3037FN L3037QN PLCC44 PQFP44 PTC 880 st diode cross reference Relay cf 318 0.8
    Text: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT PR ELIM IN A R Y DATA . . • . ■ ■ ■ ■ ■ ■ . ■ ■ MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION


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    L3037 PLCC44 PQFP44 10x10) L3037FN L3037QN 100ms) L3037 L3037T-40Â UAA 146 L3037QN PTC 880 st diode cross reference Relay cf 318 0.8 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF