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    JEDEC DO-214AA DIODE Search Results

    JEDEC DO-214AA DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    JEDEC DO-214AA DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS160 Power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature packages ■ Avalanche capability specified A A K K SMA JEDEC DO-214AC STPS160A SMB (JEDEC DO-214AA)


    Original     		STPS160 DO-214AC) STPS160A DO-214AA) STPS160U PDF

    do-214ac footprint

    Abstract: STPS160 STPS160A STPS160U 4608 ST diode E16
    Text: STPS160 Power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature packages ■ Avalanche capability specified A A K K SMA JEDEC DO-214AC STPS160A SMB (JEDEC DO-214AA)


    Original     		STPS160 DO-214AC) STPS160A DO-214AA) STPS160U do-214ac footprint STPS160 STPS160A STPS160U 4608 ST diode E16 PDF

    st marking c4 diode DO-214AB

    Abstract: tvs SMC MARKING C4
    Text: LNBTVS Transil for low noise block protection Datasheet - production data Description A K SMC JEDEC DO-214AB A K SMB (JEDEC DO-214AA) Features The LNBTVS series has been designed to protect LNB voltage regulators in satellite set top boxes against electrostatic discharges according to


    Original     		DO-214AB) DO-214AA) DocID17882 st marking c4 diode DO-214AB tvs SMC MARKING C4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMLVT3V3 Low voltage Transil Features • Peak pulse power 600 W 10/1000 s ■ Stand off voltage 3.3 V ■ Unidirectional type ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline A K SMB (JEDEC DO-214AA) Description The SMLVT3V3 is a Transil diode designed


    Original     		DO-214AA) PDF

    JEDEC DO-214AA

    Abstract: marking sm DO-214AA DO-214AA 3v3 do-214aa footprint JESD97 DO-214AA diode SMLVT3V3
    Text: SMLVT3V3 Low voltage Transil Features • Peak pulse power 600 W 10/1000 s ■ Stand off voltage 3.3 V ■ Unidirectional type ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline A K SMB (JEDEC DO-214AA) Description The SMLVT3V3 is a Transil diode designed


    Original     		DO-214AA) JESD97. Aug-2001 25-Apr-2007 JEDEC DO-214AA marking sm DO-214AA DO-214AA 3v3 do-214aa footprint JESD97 DO-214AA diode SMLVT3V3 PDF

    marking sm DO-214AA

    Abstract: SMLVT3V3 TM DO-214AA JESD97
    Text: SMLVT3V3 Low voltage Transil Features • Peak pulse power 600 W 10/1000 s ■ Stand off voltage 3.3 V ■ Unidirectional type ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline A K SMB (JEDEC DO-214AA) Description The SMLVT3V3 is a Transil diode designed


    Original     		DO-214AA) marking sm DO-214AA SMLVT3V3 TM DO-214AA JESD97 PDF

    4146

    Abstract: No abstract text available
    Text: SMLVT3V3 Low voltage Transil Features • Peak pulse power 600 W 10/1000 s ■ Stand off voltage 3.3 V ■ Unidirectional type ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline A K SMB (JEDEC DO-214AA) Description The SMLVT3V3 is a Transil diode designed


    Original     		DO-214AA) 4146 PDF

    BUV 481

    Abstract: bbg "marking" diode IPC7531 bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A K Unidirectional SMB (JEDEC DO-214AA)


    Original     		DO-214AA) IEC61000-4-2 IEC61000-4-5 UL94V-0 MIL-STD-750, RS-481 IEC60286-3 IPC7531 BUV 481 bbg "marking" diode bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR PDF

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 PDF

    power tmos

    Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
    Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		Aug-2003 power tmos 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    carrier chiller

    Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
    Text: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’


    Original     		Sep-2000 r14525 carrier chiller BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook PDF

    IGBT 60A spice model

    Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
    Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		September-2006 IGBT 60A spice model 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola PDF

    Diode SOT-23 marking 15d

    Abstract: pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A
    Text: BRD8009/D Rev. 1, Apr-2001 Transient Voltage Suppression Devices Transient Voltage Suprression Devices 04/01 BRD8009 REV 1 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev. 1, Apr–2001  SCILLC, 2001 Previous Edition  1999 “All Rights Reserved’’


    Original     		BRD8009/D Apr-2001 BRD8009 r14525 DLD601 Diode SOT-23 marking 15d pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A PDF

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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