ES1879S
Abstract: No abstract text available
Text: jess ; ES1879 vW/oDrivePSolution Product Brief ESS Technology, Inc. DESCRIPTION FEATURES The ES1879 AudicOme’ solution is a mixed-signal single-chip device that provides 16-bit stereo sound and FM music synthesis for notebook computers. It is compliant with the Microsoft* PC 97
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ES1879
16-bit
16bit
SAM0Q17-111097
ES1879S
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72116
Abstract: tamura solder paste solder paste tlf 204 29 tamura solder paste PROFILE NC-SMQ92J solder paste solder paste tamura tlf 204 29 UP78 multicore RP15 tamura No clean solder paste Loctite rp15
Text: AN825 Vishay Siliconix The Solderability of the PowerPAKr SO-8 and PowerPAK 1212-8 When Using Different Solder Pastes and Profiles Jess Brown and Kandarp Pandya INTRODUCTION Next-generation PowerPAK packages from Vishay Siliconix feature very low thermal resistances, enabling higher power
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AN825
15-Dec-03
72116
tamura solder paste
solder paste tlf 204 29
tamura solder paste PROFILE
NC-SMQ92J solder paste
solder paste tamura tlf 204 29
UP78
multicore RP15
tamura No clean solder paste
Loctite rp15
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71933
Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420
Text: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental
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AN605
08-Sep-03
71933
Mohan
si4886
Si4420 siliconix
Mohan power electronics converters applications a
MOSFET SO-8
Si4420 siliconix datasheet
SI4442
AN605
Si4420
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IC TTL 7400 free
Abstract: 1G66 7400 series logic ICs cost 1GT66 LM741 audio amplifiers LM741 dual ls 7400 LM741 SC88A Jess Technology
Text: AND8018/D Unique and Novel Uses for ON Semiconductor's New One-Gate Family http://onsemi.com Prepared By: Fred Zlotnick, Strategic Marketing Jess Diaz, Market Development Standard Logic Business Unit APPLICATION NOTE INTRODUCTION an infrastructure to support rapid design of moderate sized
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AND8018/D
r14525
IC TTL 7400 free
1G66
7400 series logic ICs cost
1GT66
LM741 audio amplifiers
LM741 dual
ls 7400
LM741
SC88A
Jess Technology
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Jess Technology
Abstract: WT6561 xbox joystick CRC16 WT6561F usb joystick
Text: WT6561F USB Device Controller with Hub WT6561F USB Embedded Controller with Hub Flash Type Preliminary Specification v.099h Jess Technology Co Ltd V0.99h Suites 2202-7, 22/F Tower6, The Gateway, Tsimshatsui, Kowloon, Hong Kong TEL:852-2123 3289 FAX:852- 2123 3393
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WT6561F
Jess Technology
WT6561
xbox joystick
CRC16
WT6561F
usb joystick
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PCIM
Abstract: Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switchi trench TEOS oxide layer PCIM 177 Si4390DY Si4392DY Si7390DP Si7392DP trench ultra low power mosfet fast switching
Text: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20-22, Nuremberg, Germany Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switching Performance. Jess Brown, Serge Jaunay and Mohamed Darwish
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PCIM 177
Abstract: mosfet cross reference schematic SMPS 12V 20A PCIM 96 AN607 Si4724CY Si4768CY Si4770CY PCIM 186 MOSFET Device Effects on Phase Node Ringing
Text: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20 -22, Nuremberg, Germany Improving the performance of power MOSFETs by tailoring the driver to the specific MOSFET gate requirements. Jess Brown, Derek Koonce, Jasper Hou, Vishay Siliconix.
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Si4770CY
500kHz
AN607,
PCIM 177
mosfet cross reference
schematic SMPS 12V 20A
PCIM 96
AN607
Si4724CY
Si4768CY
PCIM 186
MOSFET Device Effects on Phase Node Ringing
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AN608
Abstract: RG capacitor AN605 Si4892DY POWER MOSFET siliconix an605
Text: AN608 Vishay Siliconix Power MOSFET Basics: Understanding Gate Charge and Using It To Assess Switching Performance Jess Brown INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone
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AN608
02-Dec-04
AN608
RG capacitor
AN605
Si4892DY
POWER MOSFET
siliconix an605
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7400 series CMOS Logic ICs
Abstract: 1GT66 7400 TTL 1GU04 TTL 2 input 7400 with one input at constant 1 propagation delay SIGNAL PATH DESIGNER IC TTL 7400 free the pin function of ic 7400
Text: AND8018/D Unique and Novel Uses for ON Semiconductor's New One-Gate Family http://onsemi.com Prepared By: Fred Zlotnick, Strategic Marketing Jess Diaz, Market Development Standard Logic Business Unit APPLICATION NOTE INTRODUCTION an infrastructure to support rapid design of moderate sized
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AND8018/D
13mm2
7400 series CMOS Logic ICs
1GT66
7400 TTL
1GU04
TTL 2 input 7400 with one input at constant 1 propagation delay
SIGNAL PATH DESIGNER
IC TTL 7400 free
the pin function of ic 7400
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Si488DY
Abstract: schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401
Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany POINT OF LOAD CONVERTERS - The Topologies, Converters, and Switching Devices Required for Efficient Conversion Jess Brown, Vishay Siliconix, UK e -mail: [email protected] Abstract Point of load POL or point of use (POU)
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Si9118/9
AN724,
com/docs/70824/70824
com/docs/70875/70875
Si488DY
schematic diagram 12v 48v dc buck boost convert
schematic diagram 12v - 48v dc buck boost convert
PCIM 177
SI9118
48V to 12V buck boost transformer
RMS-26
schematic diagram dc-dc flyback converter
1545CT
2N4401
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Untitled
Abstract: No abstract text available
Text: VISHAY SILICONIX Power MOSFETs Application Note 608 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance By Jess Brown INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone
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HE80012M
Abstract: HE80012S HE80016M HE80016S HE80021M HE80021S HE83000 HE83115 HE8P160 Jess Technology
Text: Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852 2123 3289 Fax: (852) 2123 3393 E-mail: [email protected] Home Page: www.jesstech.com HE8P160 HE80000 SERIES A. HE8P160 Introduction HE8P160 is a member of 8-bit Micro-controller OTP series product developed by Jess
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HE8P160
HE80000
HE8P160
HE80012S,
HE80016S,
HE80021S,
HE83000,
HE80012M,
HE80012M
HE80012S
HE80016M
HE80016S
HE80021M
HE80021S
HE83000
HE83115
Jess Technology
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c832
Abstract: Hsuan Mao J394 X1300 22bu c832a C8324-04MSXB00 OY-IE0030 Jess Technology
Text: 8 B m/NOTZÌ.m /Salety: 1-1-Mi/Rating: AC 5V/0.5A 1-2- ÄHSSJfc^nsutoticn Resistance; 500M ohm Min at DC fOOV l-il0M# /Dtetectric Withstanding tfoJtoge.* AC IGOV fot t nninute f-4, HMBjfi/Conloct Resistance: 30m ohm or Jess 24íS/*WTBíML* 2 - 1.St?/P»kìhR/BRASS/&èXu"/GW30u’/J=0.20mm
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fwbrass/te30uygold30u
20rnm
15xgf
C8324-04MSXB00
C832mSXB0Â
C8324-04MSXB00
c832
Hsuan Mao
J394
X1300
22bu
c832a
OY-IE0030
Jess Technology
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Untitled
Abstract: No abstract text available
Text: V I S H AY S I L I C O N I X 功率 MOSFET 应用指南 608 功率 MOSFET 基本系列：了解栅极电荷并用来评估开关性能 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance 作者 - Jess Brown 引言 本册是系列应用指南中的第二册，对于 MOSFET 独立器件以
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KWS-Electronic
Abstract: No abstract text available
Text: PRODUCT LINE E For over 35 years KWS-Electronic has been developing and implementing solutions that point to the future. Based on very efficient hardware KWS-Electronic offers retrofit measuring receivers for the professionals who value long-term value retention as well as high investment security.
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9638
Abstract: Jess Technology
Text: 9638 DUAL HIGH SPEED DIFFERENTIAL LINE DRIVER The 9638 is a Schottky, TTL-compatible Dual Channel Differential Line Driver, designed specifically to meet the EIA-RS-422 specifications. It is designed to provide unipolar differential drive to tw isted-pair or parallel-wire transm ission lines. The inputs are TTL
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EIA-RS-422
9638
Jess Technology
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Jess Technology
Abstract: No abstract text available
Text: Press Release CYPRESS, IDT AND MICRON TEAM TO PROVIDE NEW QDR SRAM ARCHITECTURE New SRAM Architecture Targets High-Bandwidth Applications Operating at Data Rates Above 200 MHz SAN JOSE, Calif., July 26, 1999 Cypress Semiconductor Corp. NYSE: CY , IDT, Inc. (Nasdaq:
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lucent wdm
Abstract: Cypress Computer Systems Jess Technology
Text: Press Release CYPRESS OPTIMIZES SPECIALTY MEMORIES FOR DATA SUPERHIGHWAY "Internet" Memories Designed For Bandwidth Rather Than Density Support Aggressive Push Into Fast-Growing Datacom/Telecom Markets SAN JOSE, California…August 17, 1999 - Cypress Semiconductor Corporation today announced a
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FLEx36TM
Flex36
lucent wdm
Cypress Computer Systems
Jess Technology
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M52749FP
Abstract: OSD ic
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M52749FP
M52749FP
OSD ic
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CZ20D
Abstract: No abstract text available
Text: DUAL 16K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 CPU PRELIMINARY IDT7MB6139 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed C M O S static RA M module constructed to support the ID T 7 9 R 3 0 0 0 R IS C C P U as a com plete data
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IDT79R3000
IDT7MB6139
128-pin
7MB6139
CZ20D
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MCM6205C
Abstract: MCM6205CJ35
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 32K x 9 Bit Fast Static RAM MCM6205C The MCM6205C is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for
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MCM6205C
62Q5C
MCM6205CJ15
MCM6205CJ17
MCM6205CJ20
MCM6205CJ25
MCM6205CJ35
MCM6205CJ15R2
MCM6205CJ17R2
MCM6205CJ20R2
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Untitled
Abstract: No abstract text available
Text: D P S 1 2 8 M 8 A H IG H SPEED C ER A M IC 1 2 8 K X 8 C M O S SRAM M O N O LIT H IC Dense-Pac Microsystems. Inc. ADVANCED INFORMATION D ESC R IP T IO N : T h e D P S 1 2 8 M 8 A is a high sp eed m onolithic 128K X 8 Static Random Access Memory SRAM fabricated using C M O S technology. It is designed for
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DPS128M
600-mil
32-pin
32-Pad
SDA037-10
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Untitled
Abstract: No abstract text available
Text: Exclusive Technology Feature ISSUE: April 2015 Application-Specific FOM: Key To Choosing The Right MOSFET by Sanjay Havanur and Philip Zuk, Vishay Siliconix, Santa Clara, Calif. Size, efficiency and cost are the definitive characteristics of any power supply. In the computing segment, the
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2930L-08
Abstract: TG220F 2930L08 2930L
Text: NJM2930 LOW DROP OUT V0LTA6E REGULATOR PACKAGE OUTLINE • GENERAL DESCRIPTION The N JM 2930 3-term inal positive voltage regulator features an ability to source 150mA of output current 100mA: L-Type with an input-output differential of 0.6V or less. Efficient use of low input volt
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NJM2930
150mA
100mA:
NJM2930L05
NJM2930F05
NJM2930F05/L05
2930L-08
TG220F
2930L08
2930L
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