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Abstract: No abstract text available
Text: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-R
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Abstract: No abstract text available
Text: 2SK30ATM-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-Y
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Abstract: No abstract text available
Text: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-GR
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Abstract: No abstract text available
Text: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-O
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2sk30a
Abstract: No abstract text available
Text: 2SK30A-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-R
2sk30a
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2SK30A
Abstract: No abstract text available
Text: 2SK30A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30A
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2SK30AY
Abstract: 2SK30A-Y
Text: 2SK30A-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-Y
2SK30AY
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2SK30A
Abstract: 2SK30A-O
Text: 2SK30A-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-O
2SK30A
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2SK30A-GR
Abstract: No abstract text available
Text: 2SK30A-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-GR
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Abstract: No abstract text available
Text: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m
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2SK30ATM
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2SK30A
Abstract: 2SK147 3SK101 2sk117 JFET 2SK30A 2SK30A D 2SK373 2SK170 2SK112 2SK113
Text: [3] 5. 電界効果トランジスタ FET の特性 5.1 FET の基礎 電界効果トランジスタ 解 説 ILHOG HIIHFW WUDQVLVWRU 略して )(7 は一般のバイポーラトランジスタとは、 その動作原理をまったく異にする素子で、バイポーラトランジスタが電流制御型の素子であるのに対し、
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2SK30A
2SK147
3SK101
2sk117
JFET 2SK30A
2SK30A D
2SK373
2SK170
2SK112
2SK113
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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